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AiT Semiconductor Inc. www.ait-ic.com AM6602 MOSFET DUAL ENHANCEMENT MODE MOSFET (N - AND P -CHANNEL) REV1.0 - DEC 2013 RELEASED - - 1 - DESCRIPTION FEATURES AM6602 is available in a SOT-26 package.  N-Channel 30V/4.9A, RDS(ON)=39mΩ(max.) @ VGS=10V RDS(ON)=68mΩ(max.) @ VGS=4.5V  P-Channel -30V/-3A, RDS(ON)=100mΩ(max.) @ VGS=-10V RDS(ON)=170mΩ(max.) @ VGS=-4.5V  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant)  Available in a SOT-26 package. ORDERING INFORMATION APPLICATION Package Type Part Number SOT-26 E6 AM6602E6R AM6602E6VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package  Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.  Load Switch PIN DESCRIPTION

AiT Semiconductor Inc. www.ait-ic.com AM6602 MOSFET DUAL ENHANCEMENT MODE MOSFET (N - AND P -CHANNEL) REV1.0 - DEC 2013 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G1 Gate1

2 S2 Source2

3 G2 Gate2

4 D2 Drain2

5 S1 Source1

6 D1 Drain1

AiT Semiconductor Inc. www.ait-ic.com AM6602 MOSFET DUAL ENHANCEMENT MODE MOSFET (N - AND P -CHANNEL) REV1.0 - DEC 2013 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted Parameter N Channel P Channel Units VDSS, Drain-Source Voltage 30 -30 V VGSS, Gate-Source Voltage ±20 ±20 V ID, Continuous Drain Current TA=25℃ 4.9 -3 A TA=70℃ 3.9 -24 IDM, 300μs Pulsed Drain Current VGS=10V 19 -12 IS, Diode Continuous Forward Current 1 TJ, Maximum Junction Temperature 150 ℃ TSTG, Storage Temperature Range -55~150 ℃ PD, Maximum Power Dissipation TA=25oC 1.4 W TA=70℃ 0.9 RθJANOTE1, Thermal Resistance-Junction to Ambient t ≤ 10s 90 °C/W Steady state 125 Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Surface Mounted on 1in2 pad area.

AiT Semiconductor Inc. www.ait-ic.com AM6602 MOSFET DUAL ENHANCEMENT MODE MOSFET (N - AND P -CHANNEL) REV1.0 - DEC 2013 RELEASED - - 4 - N CHANNEL ELECTRICAL CHARACTERISTICS TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=250μA 30 - - V Zero Gate Voltage Drain Current IDSS VDS=24V,VGS=0V - - 1 μA TJ=85°C 30 Gate Threshold Voltage VGS(th) VDS=VGS,IDS=250μA 1.3 1.8 2.5 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±10 μA Drain-Source On-state Resistance RDS(ON) NOTE2 VGS=10V,IDS=4.9A - 32 39 mΩ VGS-4.5V,IDS=3A - 52 68 Diode Characteristics Diode Forward Voltage VSD NOTE2 ISD=1A,VGS=0V - 0.75 1.1 V Reverse Recovery Time trr ISD=4.9A, dlSD/dt=100A/μs - 9.2 - ns Reverse Recovery Charge Qrr - 4.3 - nC Dynamic Characteristics NOTE3 Gate Resistance RG VGS=0V,VDS=0V,F=1MHz - 2.3 - Ω Input Capacitance CISS VGS=0V, VDS=15V, Frequency=1.0MHz - 215 - pF Output Capacitance COSS - 37 - Reverse Transfer Capacitance CRSS - 28 - Turn-on Delay Time tD(ON) VDD=15V, RL=15Ω IDS=1A, VGEN=10V, RG=6Ω - 5.3 8 ns Turn-on Rise Time tR - 11 16 Turn-off Delay Time tD(OFF) - 12 17 Turn-off Fall Time tF - 2.6 4 Gate Charge Characteristics NOTE3 Total Gate Charge QG VDS=15V, IDS=4.9A VGS=4.5V - 3 - nC VGS=10V - 5.8 - Gate-Source Charge QGS VDS=15V, VGS=10V, IDS≡4.9A - 1.1 - Gate-Drain Charge QGD - 1.5 - Threshold Gate Charge QGth - 0.5 - NOTE2: Pulse test; pulse width≤300μs, duty cycle≤2%. NOTE3: Guaranteed by design, not subject to production testing.

AiT Semiconductor Inc. www.ait-ic.com AM6602 MOSFET DUAL ENHANCEMENT MODE MOSFET (N - AND P -CHANNEL) REV1.0 - DEC 2013 RELEASED - - 5 - P CHANNEL ELECTRICAL CHARACTERISTICS TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=-250μA -30 - - V Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - - -1 μA TJ=85°C - - -30 Gate Threshold Voltage VGS(th) VDS=VGS,IDS=-250μA -1.3 -1.8 -2.5 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±10 μA Drain-Source On-state Resistance RDS(ON) NOTE2 VGS=-10V,IDS=-3A - 82 100 mΩ VGS=-4.5V,IDS=-1.9A - 125 170 Diode Characteristics Diode Forward Voltage VSD NOTE2 ISD=-1A,VGS=0V - -0.75 -1.1 V Reverse Recovery Time trr ISD=-3A, dlSD/dt=100A/μs - 19 - ns Reverse Recovery Charge Qrr - 14 - nC Dynamic Characteristics NOTE3 Gate Resistance RG VGS=0V,VDS=0V,F=1MHz - 7 - Ω Input Capacitance CISS VGS=0V, VDS=-15V, Frequency=1.0MHz - 229 - pF Output Capacitance COSS - 42 - Reverse Transfer Capacitance CRSS - 33 - Turn-on Delay Time tD(ON) VDD=-15V, RL=15Ω IDS=-1A, VGEN=-10V, RG=6Ω - 7.2 - ns Turn-on Rise Time tR - 9.3 - Turn-off Delay Time tD(OFF) - 15.4 - Turn-off Fall Time tF - 3.6 - Gate Charge Characteristics NOTE3 Total Gate Charge QG VDS=-15V, IDS=-3A VGS=-4.5V - 3.3 - nC VGS=-10V - 6.5 - Gate-Source Charge QGS VDS=-15V, VGS=-10V, IDS=-3A - 1.1 - Gate-Drain Charge QGD - 1.1 - Threshold Gate Charge QGth - 0.6 - NOTE2: Pulse test; pulse width≤300μs, duty cycle≤2%. NOTE3: Guaranteed by design, not subject to production testing.

AiT Semiconductor Inc. www.ait-ic.com AM6602 MOSFET DUAL ENHANCEMENT MODE MOSFET (N - AND P -CHANNEL) REV1.0 - DEC 2013 RELEASED - - 6 - N CHANNEL TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance

AiT Semiconductor Inc. www.ait-ic.com AM6602 MOSFET DUAL ENHANCEMENT MODE MOSFET (N - AND P -CHANNEL) REV1.0 - DEC 2013 RELEASED - - 7 - 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge

AiT Semiconductor Inc. www.ait-ic.com AM6602 MOSFET DUAL ENHANCEMENT MODE MOSFET (N - AND P -CHANNEL) REV1.0 - DEC 2013 RELEASED - - 8 - P CHANNEL TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance

AiT Semiconductor Inc. www.ait-ic.com AM6602 MOSFET DUAL ENHANCEMENT MODE MOSFET (N - AND P -CHANNEL) REV1.0 - DEC 2013 RELEASED - - 9 - 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge

AiT Semiconductor Inc. www.ait-ic.com AM6602 MOSFET DUAL ENHANCEMENT MODE MOSFET (N - AND P -CHANNEL) REV1.0 - DEC 2013 RELEASED - - 10 - DETAILED INFORMATION Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms

AiT Semiconductor Inc. www.ait-ic.com AM6602 MOSFET DUAL ENHANCEMENT MODE MOSFET (N - AND P -CHANNEL) REV1.0 - DEC 2013 RELEASED - - 11 -

PACKAGE INFORMATION

Dimension in SOT-26 Package (Unit: mm) SYMBOL MIN MAX A - 1.250 A1 0.000 0.150 A2 0.900 1.300 b 0.300 0.500 c 0.080 0.220 D 2.700 3.100 E 2.600 3.000 E1 1.400 1.800 e 0.950(BSC) e1 1.900(BSC) L 0.300 0.600 θ 0° 8°

AiT Semiconductor Inc. www.ait-ic.com AM6602 MOSFET DUAL ENHANCEMENT MODE MOSFET (N - AND P -CHANNEL) REV1.0 - DEC 2013 RELEASED - - 12 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconduct or Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.