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AiT Semiconductor Inc. www.ait-ic.com AM6512 MOSFET N-CHANNEL ENHANCEMENT M ODE REV2.0 - MAY 2016 RELEASED, MAY 2018 UPDATED - - 1 - DESCRIPTION FEATURES The AM6512 is available in DFN8(5x6) package.
ORDERING INFORMATION
DFN8(5x6) SPQ: 3,000pcs/ Reel AM6512J8R AM6512J8VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products 30V/80A, RDS(ON)= 1.9mΩ (Max.) @ VGS=10V RDS(ON)= 3mΩ (Max.) @ VGS=4.5V 100% UIS + Rg Tested Reliable and Rugged Lower Qg and Qgd for high-speed switching Lower RDS(ON) to Minimize Conduction Losses Available in DFN8(5x6) package. APPLICATION Power Management in Desktop Computer or DC/DC Converters. PIN DESCRIPTION N-Channel MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM6512 MOSFET N-CHANNEL ENHANCEMENT M ODE REV2.0 - MAY 2016 RELEASED, MAY 2018 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM6512 MOSFET N-CHANNEL ENHANCEMENT M ODE REV2.0 - MAY 2016 RELEASED, MAY 2018 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless Otherwise Noted VDSS, Drain-Source Voltage 30V VGSS, Gate-Source Voltage ±20V TJ, Maximum Junction Temperature 150°C TSTG, Storage Temperature Range -55°C~150°C IS, Diode Continuous Forward Current TC=25°C 42.5A IDNOTE1, Continuous Drain Current TC=25°C 80*A TC=100°C 75A IDMNOTE2, Pulsed Drain Current TC=25°C 160A PD, Maximum Power Dissipation TC=25°C 78W TC=100°C 31W RθJC, Thermal Resistance-Junction to Case Steady State 1.6°C/W IDNOTE3, Continuous Drain Current TA=25°C 28A TA=70°C 22A PDNOTE3, Maximum Power Dissipation TA=25°C 2.3W TA=70°C 1.5W RθJANOTE3, Thermal Resistance-Junction to Ambient t ≤10s 20°C/W Steady State 55°C/W IASNOTE4, Avalanche Current, Single Pulse L=0.1mH 43A EASNOTE4, Avalanche Energy, Single Pulse L=0.1mH 92mJ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1,*: Max. continue current is limited by bonding wire. NOTE2: Pulse width is limited by max. junction temperature. NOTE3: RθJA steady state t=999s. NOTE4: UIS tested and pulse width limited by maximum junction temperature 150°C (initial temperature TJ=25°C).
AiT Semiconductor Inc. www.ait-ic.com AM6512 MOSFET N-CHANNEL ENHANCEMENT M ODE REV2.0 - MAY 2016 RELEASED, MAY 2018 UPDATED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless Otherwise Noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=-250μA 30 - - V Drain-Source Breakdown Voltage (transient) BVDSSt VGS=0V, ID(aval)=40A Tcase=25°C, ttransient=100ns 34 - - V Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V - - 1 μA TJ=85°C - - 30 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250μA 1.3 1.6 2.3 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Drain-Source On-state Resistance RDS(ON) NOTE5 VGS=10V, IDS=20A - 1.5 1.9 mΩ TJ=125°C - 2.2 - VGS=4.5V, IDS=12A - 2.2 3 Forward Transconductance Gfs VDS=5V, IDS=15A - 32 - S Diode Characteristics Diode Forward Voltage VSDNOTE5 ISD=20A, VGS=0V - 0.8 1.1 V Reverse Recovery Time trr ISD=20A, dlSD/dt=100A/μs - 50 - ns Charge Time ta - 23.5 - Discharge Time tb - 27.5 - Reverse Recovery Charge Qrr - 45 - nC Dynamic Characteristics Gate Resistance RG VGS=0V, VDS=0V, f=1MHz - 0.9 2 Ω Input Capacitance Ciss VGS=0V, VDS=15V, Frequency=1.0MHz - 2820 3666 pF Output Capacitance Coss - 1910 2674 Reverse Transfer Capacitance Crss - 140 210 Turn-on Delay Time td(ON) VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω - 15.5 - ns Turn-on Rise Time tr - 11 - Turn-off Delay Time td(OFF) - 35 - Turn-off Fall Time tf - 40 - Gate Charge Characteristics Total Gate Charge Qg VDS=15V, VGS=10V, IDS=20A - 44.5 57.8 nC Total Gate Charge Qg VDS=15V, VGS=4.5V, IDS=20A - 21.2 - Threshold Gate Charge Qgth - 2.9 - Gate-Source Charge Qgs - 4.3 - Gate-Drain Charge Qgd - 8.3 - NOTE5: Pulse test ; pulse width≤300us, duty cycle≤2%.
AiT Semiconductor Inc. www.ait-ic.com AM6512 MOSFET N-CHANNEL ENHANCEMENT M ODE REV2.0 - MAY 2016 RELEASED, MAY 2018 UPDATED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Safe Operation Area 6. Thermal Transient Impedance
AiT Semiconductor Inc. www.ait-ic.com AM6512 MOSFET N-CHANNEL ENHANCEMENT M ODE REV2.0 - MAY 2016 RELEASED, MAY 2018 UPDATED - - 6 - 7. Output Characteristics 8. Drain-Source On Resistance 9. Gate-Source On Resistance 10. Gate Threshold Voltage 11. Drain-Source On Resistance 12. Source-Drain Diode Forward
AiT Semiconductor Inc. www.ait-ic.com AM6512 MOSFET N-CHANNEL ENHANCEMENT M ODE REV2.0 - MAY 2016 RELEASED, MAY 2018 UPDATED - - 7 - 13. Capacitance 14. Gate Charge 15. Transfer Characteristics
AiT Semiconductor Inc. www.ait-ic.com AM6512 MOSFET N-CHANNEL ENHANCEMENT M ODE REV2.0 - MAY 2016 RELEASED, MAY 2018 UPDATED - - 8 - DETAILED INFORMATION Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM6512 MOSFET N-CHANNEL ENHANCEMENT M ODE REV2.0 - MAY 2016 RELEASED, MAY 2018 UPDATED - - 9 - CLASSIFICATION PROFILE
AiT Semiconductor Inc. www.ait-ic.com AM6512 MOSFET N-CHANNEL ENHANCEMENT M ODE REV2.0 - MAY 2016 RELEASED, MAY 2018 UPDATED - - 10 -
PACKAGE INFORMATION
Dimension in DFN8 (Unit: mm) Symbol MILLIMETERS INCHES Min Max Min Max A 0.90 1.20 0.035 0.047 B 0.30 0.51 0.012 0.020 C 0.19 0.25 0.007 0.010 D 4.80 5.30 0.189 0.209 D1 3.60 4.40 0.141 0.173 E 5.90 6.20 0.232 0.244 E1 5.50 5.80 0.217 0.228 e 1.27 BSC 0.050 BSC F 0.05 0.30 0.002 0.012 F1 0.35 0.75 0.014 0.030 G 0.05 0.30 0.002 0.012 G1 0.35 0.75 0.014 0.030 H 3.34 3.90 0.131 0.154 K 0.762 - 0.030 -
AiT Semiconductor Inc. www.ait-ic.com AM6512 MOSFET N-CHANNEL ENHANCEMENT M ODE REV2.0 - MAY 2016 RELEASED, MAY 2018 UPDATED - - 11 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without not ice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authori zed, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.