AM60R380F AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM60R380F MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JAN 2021 RELEASED - - 1 - DESCRIPTION FEATURES VDS@ TJ.max =650V VGS=±30V ID(A)= 11A RDS(ON)=0.32Ω (Typ.) @ VGS=10V The AM60R380F is available in TO-220, TO-220F, TO-251, TO-252 and TO-263 packages.
ORDERING INFORMATION
V: Halogen free Package R: Tape & Reel AiT provides all RoHS products ⚫ Fast Switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability ⚫ Available in TO-220, TO-220F, TO-251, TO-252 and TO-263 packages
APPLICATIONS
⚫ High frequency switching mode power supply N CHANNEL MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM60R380F MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JAN 2021 RELEASED - - 2 - PIN DESCRIPTION Top View Top View Top View Top View Top View Pin # Symbol Function TO-220 TO-220F TO-251 TO-252 TO-263 1 1 1 1 1 G Gate 2 2 2 2 2 S Source 3 3 3 3 3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM60R380F MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JAN 2021 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS at TC = 25°C, unless otherwise specified VDSS, Drain-to-Source Voltage 600V ID, Continuous Drain Current Continuous Drain Current (TC=100°C) 11A 6.93A IDM, Pulsed Drain CurrentNOTE1 33A VGS, Gate-to-Source Voltage ±30V EAS, Single Pulse Avalanche EnergyNOTE2 250mJ dv/dt, Peak Diode Recovery dv/dtNOTE3 15V/ns PD, Power Dissipation TO-251\\TO-252\\TO-220\\TO-263 Derating Factor above 25°C 100W 0.8W/°C PD, Power Dissipation TO-220F Derating Factor above 25°C 31W 0.25W/°C TJ, TSTG, Operating Junction and Storage Temperature Range 150, -55°C ~150°C TL, Maximum Temperature for Soldering 300°C Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS TO-251\\TO-252\\TO-220\\TO-263 Parameter Symbol Ratings Units Junction-to-Case RθJC 1.25 ℃/W Junction-to-Ambient RθJA 62.5 ℃/W TO-220F Parameter Symbol Ratings Units Junction-to-Case RθJC 4 ℃/W Junction-to-Ambient RθJA 80 ℃/W
AiT Semiconductor Inc. www.ait-ic.com AM60R380F MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JAN 2021 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
at TC = 25°C, unless otherwise specified Parameter Symbol Conditions Min Typ Max Units OFF Characteristics Drain to Source Breakdown Voltage VDSS VGS=0V, ID=250µA 600 - - V BVDSS Temperature Coefficient ΔBVDSS/ ΔTJ ID=250uA, Reference25℃ - 0.7 - V/℃ Drain to Source Leakage Current IDSS VDS =600V, VGS=0V, TJ=25℃ - - 10 μA VDS=480V, VGS=0V, TJ=125℃ - - 500 Gate to Source Forward Leakage IGSS(F) VGS=+30V - - 100 nA Gate to Source Reverse Leakage IGSS(R) VGS=-30V - - -100 nA ON Characteristics Drain-to-Source On Resistance RDS(ON) VGS=10V, ID=3.8ANOTE4 - 0.32 0.38 Ω Gate Threshold Voltage VGS(th) VDS=VGS, ID=250µANOTE4 3.0 - 5.0 V Dynamic Characteristics Gate resistance Rg f = 1.0MHz - 10 - Ω Input Capacitance Ciss VGS=0V, VDS=25V, f=1.0MHz - 780 - pF Output Capacitance Coss - 550 - Reverse Transfer Capacitance Crss - 26 - Switching Characteristics Turn-on Delay Time td(on) ID=4.8A, VDD=400V, VGS=10V, RG=5Ω - 11 - ns Rise Time tr - 9 - Turn-off Delay Time td(off) - 38 - Fall Time tf - 8 - Total Gate Charge Qg ID=4.8A, VDD=480V, VGS=10V - 21.1 - nC Gate to Source Charge Qgs - 4.3 - Gate to Drain (“Miller”) Charge Qgd - 7.9 - Source-Drain Diode Characteristics Continuous Source Current (Body Diode) IS TC=25 °C - - 11 A Maximum Pulsed Current (Body Diode) ISM - - 33 A Diode Forward Voltage VSD IS=4.8A, VGS=0VNOTE4 - - 0.9 V Reverse Recovery Time trr IS=11A, TJ = 25°C dIF/dt=100A/us, VGS=0V - 80 - ns Reverse Recovery Charge Qrr - 260 - nC Reverse Recovery Current Irrm - 6.5 - A NOTE1: Pulse width limited by maximum junction temperature NOTE2: L=20mH, VDS=50V, Start TJ=25℃ NOTE3: ISD =11A,di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ NOTE4: Pulse width tp≤300µs, δ≤2%
AiT Semiconductor Inc. www.ait-ic.com AM60R380F MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JAN 2021 RELEASED - - 5 - TYPICAL ELECTRICAL CHARACTERISTICS 1. Safe Operating Area (No FullPAK) 2. Safe Operating Area (FullPAK) 3. Power Dissipation (No FullPAK) 4. Power Dissipation (FullPAK) 5. Max Thermal Impedance (No FullPAK) 6. Max Thermal Impedance (FullPAK)
AiT Semiconductor Inc. www.ait-ic.com AM60R380F MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JAN 2021 RELEASED - - 6 - 7. Typical Output Characteristics 8. Typical Transfer Characteristics 9. Typical Drain to Source ON Resistance vs Drain Current 10. Typical Drain to Source on Resistance vs Junction Temperature 11. Typical Threshold Voltage vs Junction Temperature 12. Typical Breakdown Voltage vs Junction Temperature
AiT Semiconductor Inc. www.ait-ic.com AM60R380F MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JAN 2021 RELEASED - - 7 - 13. Typical Capacitance vs Drain to Source Voltage 14. Typical Gate Charge vs Gate to Source Voltage
AiT Semiconductor Inc. www.ait-ic.com AM60R380F MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JAN 2021 RELEASED - - 8 - TEST CIRCUIT 1. Gate Charge Test Circuit 2. Gate Charge Waveforms 3. Resistive Switching Test Circuit 4. Resistive Switching Waveforms 5. Diode Reverse Recovery Test Circuit 6. Diode Reverse Recovery Waveform
AiT Semiconductor Inc. www.ait-ic.com AM60R380F MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JAN 2021 RELEASED - - 9 - 7. Unclamped Inductive Switching Test Circuit 8. Unclamped Inductive Switching Waveform
AiT Semiconductor Inc. www.ait-ic.com AM60R380F MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JAN 2021 RELEASED - - 10 -
PACKAGE INFORMATION
Dimension in TO-220 Package (Unit: mm) Symbol Min. Max. A 9.60 10.6 B 15.0 16.0 B1 8.90 9.50 C 4.30 4.80 C1 2.30 3.10 D 1.20 1.40 E 0.70 0.90 F 0.30 0.60 G 1.17 1.37 H 2.70 3.80 L 12.6 14.8 N 2.34 2.74 Q 2.40 3.00 ΦP 3.50 3.90
AiT Semiconductor Inc. www.ait-ic.com AM60R380F MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JAN 2021 RELEASED - - 11 - Dimension in TO-220F Package (Unit: mm) Symbol Min. Max. A 9.60 10.4 B 15.4 16.2 B1 8.90 9.50 C 4.30 4.90 C1 2.10 3.00 D 2.40 3.00 E 0.60 1.00 F 0.30 0.60 G 1.12 1.42 H 3.40 3.80 L 12.0 14.0 N 2.34 2.74 Q 3.15 3.55 ΦP 2.90 3.30
AiT Semiconductor Inc. www.ait-ic.com AM60R380F MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JAN 2021 RELEASED - - 12 - Dimension in TO-251 Package (Unit: mm) Symbol Min. Max. A 6.30 6.90 B 5.70 6.30 B1 1.00 1.20 B2 6.80 7.40 C 2.10 2.50 D 0.30 0.60 E 0.50 0.70 F 0.30 0.60 G 0.70 1.00 H 1.60 2.40 L 3.90 4.30 M 5.10 5.50 N 2.09 2.49
AiT Semiconductor Inc. www.ait-ic.com AM60R380F MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JAN 2021 RELEASED - - 13 - Dimension in TO-252 Package (Unit: mm) Symbol Min. Max. A 6.30 6.90 A1 0.00 0.13 B 5.70 6.30 C 2.10 2.50 D 0.30 0.60 E1 0.60 0.90 E2 0.70 1.00 F 0.30 0.60 G 0.70 1.20 L1 9.60 10.50 L2 2.70 3.10 H 0.60 1.00 M 5.10 5.50 N 2.09 2.49 R 0.30 T 1.40 1.60 Y 5.10 6.30
AiT Semiconductor Inc. www.ait-ic.com AM60R380F MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JAN 2021 RELEASED - - 14 - Dimension in TO-263 Package (Unit: mm) Symbol Min. Max. A 9.80 10.40 B 8.90 9.50 B1 0.00 0.10 C 4.40 4.80 D 1.16 1.37 E 0.70 0.95 F 0.30 0.60 G 1.07 1.47 H 1.30 1.80 K 0.95 1.37 L1 14.50 16.50 L2 1.60 2.30 I 0.00 0.20 Q 0° 8° R 0.40 N 2.39 2.69
AiT Semiconductor Inc. www.ait-ic.com AM60R380F MOSFET 600V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JAN 2021 RELEASED - - 15 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life sup port applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or applicatio n support. Ai T warrants the performance of its products of the specifications applicable at the time of sale.