AM60N04 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. AM60N04 www.ait-ic.com MOSFET 40V, 60A N -CH FAST SWITCHING MOSFETS REV1.0 - JUN 2024 RELEASED - - 1 - DESCRIPTION FEATURE The AM60N04 is available in PDFN8(3.3x3.3) Package. VDS RDSON ID 40V 6.8mΩ 60A RDS(ON), typ.=6.8 mΩ@VGS=10V RDS(ON), typ.=10 mΩ@VGS=4.5V Fast Switching Mosfet PIN DESCRIPTION APPLICATION High Frequency Switching and Synchronous Rectification. DC/DC Converter. PDFN8 (3.3 x 3.3) Pin# Symbol Function 1, 2, 3, S Source
4 G Gate
5, 6, 7,8 D Drain
ORDERING INFORMATION
PDFN8(3.3x3.3) SPQ: 5,000pcs/Reel PJ8S AM60N04PJ8SR AM60N04PJ8SVR Note R: Tape & Reel V: Halogen free Package AiT provides all RoHS products
AiT Semiconductor Inc. AM60N04 www.ait-ic.com MOSFET 40V, 60A N -CH FAST SWITCHING MOSFETS REV1.0 - JUN 2024 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS VDS, Drain-Source Voltage 40V VGS, Gate-Source Voltage ±20V ID, Continuous Drain Continuous (1) TC=25℃ 60A TC=100℃ 35A IDM (2), Pulsed Drain Current 130A EAS (3), Single Pulse Avalanche Energy 48mJ IAS, Avalanche Current 35A PD (4), Total Power Dissipation TC=25℃ 39W TSTG, Storage Temperature Range -55℃~+150℃ TJ, Operating Junction Temperature Range -55℃~+150℃ RθJA (1), Thermal Resistance Junction-Ambient(Steady State) 60℃/W RθJC (1), Thermal Resistance Junction-Case 3.2℃/W Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (1) The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. (2) The data tested by pulsed, pulse width≦300us, duty cycle≦2% (3) The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=31A (4) The power dissipation is limited by 150℃ junction temperature
AiT Semiconductor Inc. AM60N04 www.ait-ic.com MOSFET 40V, 60A N -CH FAST SWITCHING MOSFETS REV1.0 - JUN 2024 RELEASED - - 3 -
ELECTRICAL CHARACTERISTICS
TJ=25℃,unless otherwise noted. Parameter Symbol Conditions Min Typ. Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 40 - - V Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=12A - 6.8 8.3 mΩ VGS=4.5V, ID=10A - 10 15 Gate Threshold Voltage VGS (th) VGS=VDS, IDS=250uA 1 - 3 V Zero Gate Voltage Drain Current IDSS VDS= 32V, VGS=0V, TJ=25°C - - 1 μA VDS= 32V, VGS=0V, TJ=55°C - - 5 Gate-Source Leakage Current IGSS VGS =±20V, VDS= 0V - - ±100 nA Gate Resistance Rg VDS=0V, VGS=0V, f=1MHz - 1.7 - Ω Total Gate Charge (4.5V) Qg VD=20V, VGS=4.5V ID=12A - 5.8 - nC Gate-Source Charge Qgs - 3 - Gate-Drain Charge Qgd - 1.2 - Turn-on Delay Time Td(on) VDD=15V, VGS=10V RG=3.3Ω, ID=1A - 14.3 - ns Rise Time Tr - 5.6 - Turn-Off Delay Time Td(off) - 20 - Fall Time Tf - 11 - Input Capacitance Ciss VDS=15V, VGS=0V, f=1MHz - 690 - pF Output Capacitance Coss - 193 - Reverse Transfer Capacitance Crss - 38 - Diode Characteristics Continuous Source Current IS VG=VD=0V, Force Current - - 60 A Diode Forward Voltage VSD VGS=0V, IS=1A, TJ=25°C - - 1 V
AiT Semiconductor Inc. AM60N04 www.ait-ic.com MOSFET 40V, 60A N -CH FAST SWITCHING MOSFETS REV1.0 - JUN 2024 RELEASED - - 4 - TYPICAL PERFORMANCE CHARACTERISTICS Fig 1. Typical Output Characteristics Fig 2. On-Resistance vs. G-S Voltage Fig 3. Source Drain Forward Characteristics Fig 4. Gate-Charge Characteristics Fig 5. Normalized VGS (th) vs. TJ Fig 6. Normalized RDSON vs. TJ
AiT Semiconductor Inc. AM60N04 www.ait-ic.com MOSFET 40V, 60A N -CH FAST SWITCHING MOSFETS REV1.0 - JUN 2024 RELEASED - - 5 - Fig 7. Capacitance Fig 8. Safe Operating Area Fig 9. Normalized Maximum Transient Thermal Impedance Fig 10. Resistive Switching Test Waveforms Fig 11. Unclamped Inductive Waveform
AiT Semiconductor Inc. AM60N04 www.ait-ic.com MOSFET 40V, 60A N -CH FAST SWITCHING MOSFETS REV1.0 - JUN 2024 RELEASED - - 6 -
PACKAGE INFORMATION
Dimension in PDFN8(3.3x3.3) (Unit: mm) Symbol Millimeters (mm) Min. Max. A 0.700 0.900 A1 0.000 0.050 b 0.240 0.350 c 0.100 0.200 D 3.250 3.400 D1 3.050 3.250 D2 2.400 2.600 E 3.000 3.200 E1 1.350 1.550- e 0.650 BSC H 3.200 3.400 L 0.300 0.500 L1 0.100 0.200 L2 1.130 REF.
AiT Semiconductor Inc. AM60N04 www.ait-ic.com MOSFET 40V, 60A N -CH FAST SWITCHING MOSFETS REV1.0 - JUN 2024 RELEASED - - 7 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.