AM50-0002 MACOM | Alldatasheet

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Technical content

V 2.00 F e a t u r e s Low Noise Figure: 1.15 dB High Gain: 27 dB Low Power Consumption: 3 to 5 V, 20 mA High Dynamic Range Low Cost SOIC 8 Plastic Package D e s c r i p t i o n M/A-COM's AM50-0002 is a high per f o rmance GaAs MMIC low noise amplifier in a low cost SOIC 8-lead sur- face mount plastic package. The AM50-0002 employs a monolithic 3-stage self-bias design and a simple extern a l matching network to obtain minimum noise figure. It can be biased using 3- or 5-volt supplies. The AM50-0002 is ideally suited for use where low noise f i g u re, high gain, high dynamic range and low power consumption are r e q u i red. Typical applications include receiver front ends in the Global Positioning System (GPS) market, as well as standard gain blocks, buf f e r amps, driver amps and IF amps in both fixed and portable systems. M/A-COM's AM50-0002 is fabricated using a mature 0.5- m i c ron gate length GaAs process. The process featur e s full passivation for increased perf o rmance re l i a b i l i t y . Parameter Units Min. Typ. Max. Gain dB 25 27 29 Noise Figure dB 1.15 1.4 Input VSWR 2.0:1 Output VSWR 1.5:1 Output1 dB Compression dBm 1 Input IP3 dBm -14 Reverse Isolation dB 48 Bias Current mA 15 20 25 1.See following pages for 3-volt data. Low Noise Amplifier

1.575 GHz AM50 -0002

Electrical Specifications1 TA = +25°C,Z0=50 Ω ,VDD =+5V, PIN= -35 dBm,f=1.575 GHz SO-8 l l l l l Part Number Package AM50-0002 SOIC 8-Lead Plastic AM50-0002TR Forward Tape and Reel* AM50-0002RTR Reverse Tape and Reel* AM50-0002SMB Designer’s Kit

Ordering Information

*If specific reel size is required, consult factory for part number assignment.

V 2.00 Absolute Maximum Ratings1 Parameter Absolute Maximum VDD +10 VDC Input Power +17 dBm Channel Temperature2 +150°C Operating Temperature -40°C to 85°C Storage Temperature -65°C to 150°C 1. Operation of this device outside these limits may cause permanent damage. 2. Typical thermal resistance (ujc) = +165°C/W Low Noise Amplifier AM50-0002 Typical Performance Functional Diagram RF OUT , VDD GND GND GND GNDGND GND RF IN FREQUENCY (GHz)FREQUENCY (GHz) GAIN v sF R E QU E N C Y, TA = +25°C NOISE FIGURE v sF R E QU E N C Y, TA = +25°C Recommended PCB Configuration Frequency = 1.575 GHz Impedance Electrical Length T1 57.2 Ω 36.0° T2 82.7 Ω 16.2° 3.Pins 1, 3, 4, 5, 7 and 8 must be RF and DC grounded as shown. 4.Pin 2 is the RF input and must be connected to the simple matching network shown. 5.Pin 6 is the RF output.VDD is also applied on pin 6. 0.030 (0.76) 2X R 0.025 (0.64) PLATED THRU 12 X R 0.008 (0.20) PLATED THRU 0.024 (0.61) 0.060 (1.52) 0.109 (2.77) 0.060 (1.52) 0.172 (4.37) 0.244 (6.20) 0.072 (1.83) 0.112 (2.84)0.245 (6.22)RF IN RF OUT Dimensions in inches (mm) FR-4 circuit board, thickness = 0.016 inches (0.41) 5 V 3 V 1.4 1.3 1.2 1.1 1.0 3 V 5 V

V 2.00 Low Noise Amplifier AM50-0002 FREQUENCY (GHz)FREQUENCY (GHz) VSWR v sF R E QUENCY @ 5 V , TA = +25°C INPUT IP3 v sF R E QU E N C Y, TA = +25°C FREQUENCY (GHz)FREQUENCY (GHz) GAIN v sF R E QUENCY @ 5 V NOISE FIGURE v sF R E QUENCY @ 5 V 3.0 2.5 2.0 1.5 1.0 I n p u t O u t p u t - 4 0 ° C + 8 5 ° C + 2 5 ° C -12 -13 -14 -15 -16 3 V 5 V 1.6 1.4 1.2 1.0 0.8 + 8 5 ° C+ 2 5 ° C - 4 0 ° C Additional information is available in Application Note M540, “M/A-COM GaAs MMIC LNA SOIC-8 Platform.”