AM4920 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM4920 MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE REV1.2 - OCT 2010 RELEASED, NOV 2018 UPDATED - - 1 - DESCRIPTION FEATURES The AM4920 is the Dual N -Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications. The AM4920 is available in SOP8 package. 30V / 7.8A, RDS(ON) =16mΩ (typ.)@VGS=10V 30V / 5.8A, RDS(ON) =24mΩ (typ.)@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Available in SOP8 package
APPLICATIONS
High Frequency Point-of-Load Synchronous New working DC-DC Power System Load Switch ORDERING INFORMATION N- CHANNEL MOSFET Package Type Part Number SOP8 SPQ: 2,500pcs/Reel AM4920M8R AM4920M8VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products
AiT Semiconductor Inc. www.ait-ic.com AM4920 MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE REV1.2 - OCT 2010 RELEASED, NOV 2018 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S1 Source 1
2 G1 Gate 1
3 S2 Source 2
4 G2 Gate 2
5 D2 Drain 2
6 D2 Drain 2
7 D1 Drain 1
8 D1 Drain 1
AiT Semiconductor Inc. www.ait-ic.com AM4920 MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE REV1.2 - OCT 2010 RELEASED, NOV 2018 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise specified VDSS, Drain-Source Voltage 30V VGSS, Gate-Source Voltage ±20V ID, Continuous Drain Current, VGS=10VNOTE1 TA =25℃ 7.8A TA =70℃ 6.5A IDM, Pulsed Drain CurrentNOTE2 25A EAS, Single Pulse Avalanche Energy L=0.1mHNOTE3 27mJ IAS, Avalanche Current 14A PD, Power Dissipation TA =25℃ 2.0W TA =70℃ 1.4W TJ, Operation Junction Temperature -55℃~150℃ TSTG, Storage Temperature Range -55℃~150℃ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the d evice. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL INFORMATION Parameter Symbol Max Unit Thermal Resistance-Junction to AmbientNOTE1 Steady-State RθJA 85 °C/W Thermal Resistance Junction to LeadNOTE1 Steady-State RθJC 50 °C/W
AiT Semiconductor Inc. www.ait-ic.com AM4920 MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE REV1.2 - OCT 2010 RELEASED, NOV 2018 UPDATED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise specified Parameter Symbol Conditions Min Type Max Units Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250μA 30 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 1.0 - 2.5 V Gate Leakage Current IGSS VDS=0V, VGS=±20V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS =24V, VGS =0V TJ =25°C - - 1 μA VDS =24V, VGS =0V TJ =55°C - - 5 Drain-source On-ResistanceNOTE2 RDS(ON) VGS=10V, ID=7.8A - 16 20 mΩ VGS=4.5V, ID=5.8A - 24 30 Forward Transconductance gFS VDS=10V, ID=6A - 5.6 - S Source-Drain Doide Diode Forward VoltageNOTE2 VSD IS=1.7A, VGS=0V - 0.75 1.0 V Continuous Source CurrentNOTE1,4 IS - - 5.8 A Dynamic Parameters Total Gate Charge Qg(4.5V) VDS=15V, VGS=4.5V, ID=5.8A - 5 7.2 nC Gate-Source Charge Qgs - 1.6 - Gate-Drain Charge Qgd - 1.9 - Input Capacitance Ciss VDS=15V, VGS=0V, f=1MHz - 420 586 pF Output Capacitance Coss - 65 - Reverse Transfer Capacitance Crss - 52 - Turn-On Time td(on) VDD=15V, VGEN=10V, RG=3.3Ω - 2.2 4.4 nS tr - 38.7 68.8 Turn-Off Time td(off) - 12.5 25 tf - 4.8 9.6 NOTE1: The value of R θJA is measured with the device mounted on 1in 2 FR -4 board with 2oz. Copper, in a still air environment with TA=25°C. NOTE2: The data tested by pulsed , pulse width ≦300uS , duty cycle ≦2% NOTE3: The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH. NOTE4: The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
AiT Semiconductor Inc. www.ait-ic.com AM4920 MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE REV1.2 - OCT 2010 RELEASED, NOV 2018 UPDATED - - 5 - TYPICAL CHARACTERISTICS 1. Output Characteristics 2. On Resistance vs. Gate Source Voltage 3. Drain Source On Resistance 4. Gate Threshold Voltage 5. Gate Charge 6. Drain Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM4920 MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE REV1.2 - OCT 2010 RELEASED, NOV 2018 UPDATED - - 6 - 7. Source Drain Diode Forward 8. Capacitance 9. Power Dissipation 10. Drain Current 11. Thermal Transient Impedance
AiT Semiconductor Inc. www.ait-ic.com AM4920 MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE REV1.2 - OCT 2010 RELEASED, NOV 2018 UPDATED - - 7 -
PACKAGE INFORMATION
Dimension in SOP8 (Unit: mm) Symbol Millimeters Inches Min Max Min Max A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.040 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.288 0.244 e 1.270 BSC 0.050 BSC L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM4920 MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE REV1.2 - OCT 2010 RELEASED, NOV 2018 UPDATED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the ri sk of the customer. As used herein may involve potential risks of death, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.