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AiT Semiconductor Inc. www.ait-ic.com AM4812 30V N -CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JUN 2011 RELEASED – - 1 - DESCRIPTION FEATURES The AM4812 is the N -Channel logic enhancement mode power field effect transistor which is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. The A M4812 is particularly suited for low voltage application, and low in- line power loss are needed in a very small outline surface mount package. The AM4812 is available in SOP8 Package.
ORDERING INFORMATION
R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package 30V / 7.8A, RDS(ON) = 16mΩ (typ.)@VGS = 10V 30V / 5.8A, RDS(ON) = 22mΩ (typ.)@VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Available in SOP8 Package APPLICATION High Frequency Point-of-Load Synchronous New working DC-DC Power System Load Switch N CHANNEL MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM4812 30V N -CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JUN 2011 RELEASED – - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM4812 30V N -CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JUN 2011 RELEASED – - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified VDSS, Drain-Source Voltage 30V VGSS, Gate-Source Voltage ±20V ID, Continuous Drain Current, VGS = 10V NOTE1 TA=25°C 10A IDM, Pulsed Drain Current NOTE2 20A PD, Power Dissipation TA=25°C 3.2W TA=70°C 2W TJ, Operation Junction Temperature -55°C /150°C TSTG, Storage Temperature Range -55°C /150°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. NOTE2: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. THERMAL INFORMATION Parameter Symbol Typ Unit Thermal Resistance-Junction to Ambient RθJA 85 °C/W Thermal Resistance-Junction to Case RθJC 48 °C/W
AiT Semiconductor Inc. www.ait-ic.com AM4812 30V N -CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JUN 2011 RELEASED – - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified Parameter Symbol Conditions Min Typ Max Unit Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250μA 30 - - V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 - 2.5 V Gate Leakage Current IGSS VDS = 0V, VGS = ±20V - - ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V - - 1 µA VDS = 24V, VGS = 0V TJ = 55°C - - 5 On-State Drain Current ID(ON) VDS ≧ 5V, VGS = 10V 25 - - A Drain-source On-Resistance RDS(ON) VGS = 10V, ID = 7.8A - 16 20 mΩ VGS = 4.5V, ID = 5.8A - 22 28 Source-Drain Diode Diode Forward Voltage VSD IS = 2A, VGS = 0V - 0.8 1.2 V Dynamic Parameters Total Gate Charge Qg VDS = 15V VGS = 10V ID = 7.8A - 7.2 - nC Gate-Source Charge QGS - 1.6 - Gate-Drain Charge QGD - 2 - Input Capacitance Ciss VDS = 15V VGS = 0V f = 1MHz - 570 - pF Output Capacitance Coss - 80 - Reverse Transfer Capacitance C rss - 64 - Turn-On Time td(on) VDD = 15V VGS = 10V ID = 5A RG = 3.3Ω - 4.2 - nS tr - 10.2 - Turn-Off Time td(off) - 16 - tf - 6.2 -
AiT Semiconductor Inc. www.ait-ic.com AM4812 30V N -CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JUN 2011 RELEASED – - 5 - TYPICAL CHARACTERISTICS 1. Output Characteristics 2. Drain-Source On Resistance 3. Drain Source On Resistance 4. Gate Threshold Voltage 5. Gate Charge 6. Drain Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM4812 30V N -CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JUN 2011 RELEASED – - 6 - 7. Source Drain Diode Forward 8. Capacitance 9. Power Dissipation 10. Drain Current 11. Thermal Transient Impedance
AiT Semiconductor Inc. www.ait-ic.com AM4812 30V N -CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JUN 2011 RELEASED – - 7 -
PACKAGE INFORMATION
Dimension in SOP8 Package (mm) Symbol Min Max A 1.350 1.750 A1 0.100 0.250 A2 1.350 1.550 b 0.330 0.510 c 0.170 0.250 D 4.700 5.100 E 3.800 4.000 E1 5.800 6.200 e 1.270(BSC) L 0.400 1.270 θ 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM4812 30V N -CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - JUN 2011 RELEASED – - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or applicatio n support. AiT warrants the performance of its products of the specifications applicable at the time of sale.