AM4559 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. AM4559 www.ait-ic.com MOSFET P-CH and N-CH Fast Switching MOSFET REV1.0 - NOV 2022 RELEASED - - 1 - DESCRIPTION FEATURES The AM4559 is available in SOP8 package. BVDSS RDSON ID 60V 30mΩ 6.0A -60V 70mΩ -5.0A
APPLICATIONS
DC/DC converter Power management LCD backlight inverter
ORDERING INFORMATION
SPQ: 3,000pcs/Reel AM4559M8R AM4559M8VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products N-Channel RDS(ON),typ.= 30mΩ@VGS=10V RDS(ON),typ.= 36mΩ@VGS=4.5V P-Channel RDS(ON),typ.=70 mΩ@VGS=-10V RDS(ON),typ.=100 mΩ@VGS=-4.5V Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology TYPICAL APPLICATION N−Channel / P−Channel Pin# Symbol Function
1 S1 Source
2 G1 Gate
3 S2 Source
4 G2 Gate
5 D2 Drain
6 D2 Drain
7 D1 Drain
8 D1 Drain
AiT Semiconductor Inc. AM4559 www.ait-ic.com MOSFET P-CH and N-CH Fast Switching MOSFET REV1.0 - NOV 2022 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage VDS 60 -60 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current, VGS @ 10V (1) TA=25℃ ID 6.0 -5.0 A TA=70℃ 4.0 -3.5 A Pulsed Drain Current (2) IDM 11 -8.5 A Single Pulse Avalanche Energy (3) EAS 22.5 35.5 mJ Avalanche Current IAS 22.6 -26.6 A Total Power Dissipation (4) TA=25℃ PD 2.5 2.5 W Storage Temperature Range TSTG -55 to 150 -55 to 150 ℃ Operating Junction Temperature Range TJ -55 to 150 -55 to 150 ℃ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE Parameter Symbol Max Units Thermal Resistance Junction-Ambient (1) RθJA 85 °C/W Thermal Resistance Junction-Case (1) RθJC 62.5 (1) Calculated continuous current based on maximum allowable junction temperature. (2) Pulse Width Limited by Maximum Junction Temperature. (3) TA=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω,IAS=8.7A (4) The power dissipation is limited by 150℃ junction temperature
AiT Semiconductor Inc. AM4559 www.ait-ic.com MOSFET P-CH and N-CH Fast Switching MOSFET REV1.0 - NOV 2022 RELEASED - - 3 -
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min Typ Max Units Off Characteristic Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS = 0V, - - 1.0 μA Gate to Body Leakage Current IGSS VDS=0V, VGS = ±20V - - ±100 nA On Characteristics Gate Threshold Voltage VGS (th) VDS=VGS, ID=250μA 1.0 1.6 2.5 V Static Drain-Source on-Resistance (1) RDS (on) VGS=10V, ID=5A - 30 40 mΩ VGS=4.5V, ID=3A - 36 50 Dynamic Characteristics Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 1148 - pF Output Capacitance Coss - 58.5 - pF Reverse Transfer Capacitance Crss - 49.4 - pF Total Gate Charge Qg VDS=30V, ID=2.5A, VGS=10V - 20.3 - nC Gate-Source Charge Qgs - 3.7 - nC Gate-Drain(“Miller”) Charge Qgd - 5.3 - nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain to Source Diode Forward Current IS - - - 6 A Maximum Pulsed Drain to Source Diode Forward Current ISM - - - 20 A Drain to Source Diode Forward Voltage VSD VGS=0V, IS=5A - - 1.2 V Body Diode Reverse Recovery Time trr IF=5A, dI/dt=100A/μs - 29 - ns Body Diode Reverse Recovery Charge Qrr - 43 - nC (1) Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
AiT Semiconductor Inc. AM4559 www.ait-ic.com MOSFET P-CH and N-CH Fast Switching MOSFET REV1.0 - NOV 2022 RELEASED - - 4 - P-Channel TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA -60 - - V Static Drain-Source On-Resistance (2) RDS(ON) VGS=-10V, ID=-3.5A - 70 100 mΩ Gate Threshold Voltage VGS th) VGS=VDS, ID =-250uA -1.0 - -2.5 V Drain-Source Leakage Current IDSS VDS=-48V, VGS=0V , TA =25℃ - - 1 uA VDS=-48V, VGS=0V , TJ=55℃ - - 5 Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Forward Transconductance gfs VDS=-5V, ID=-3A - 8.5 - S Total Gate Charge (-4.5V) Qg VDS=-48V, VGS=4.5V, ID=-3A - 12.1 - nC Gate-Source Charge Qgs - 2.2 - Gate-Drain Charge Qgd - 6.3 - Turn-On Delay Time Td(on) VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-1A - 9.2 - ns Rise Time Tr - 20.1 - Turn-Off Delay Time Td(off) - 46.7 - Fall Time Tf - 9.4 - Input Capacitance Ciss VDS=-15V, VGS=0V, f=1MHz - 1137 - pF Output Capacitance Coss - 76 - Reverse Transfer Capacitance Crss - 50 - Diode Characteristics Continuous Source Current (1)(3) IS VG=VD=0V, Force Current - - -6.0 A Diode Forward Voltage (2) VSD VGS=0V, IS=-1A, TA =25℃ - - -1.2 V (1) The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. (2) The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% (3) The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
AiT Semiconductor Inc. AM4559 www.ait-ic.com MOSFET P-CH and N-CH Fast Switching MOSFET REV1.0 - NOV 2022 RELEASED - - 5 - TYPICAL ELECTRICAL CHARACTERISTICS N-Channel Fig.1 Output Characteristics Fig.2 Typical Transfer Characteristics Fig.3 On-resistance vs. Drain Current Fig.4 Body Diode Characteristics Fig.5 Gate Charge Characteristics Fig.6 Capacitance Characteristics
AiT Semiconductor Inc. AM4559 www.ait-ic.com MOSFET P-CH and N-CH Fast Switching MOSFET REV1.0 - NOV 2022 RELEASED - - 6 - Fig.7 Normalized Breakdown Voltage vs. Junction Temperature Fig.8 Normalized on Resistance vs. Junction Temperature Fig.9 Maximum Safe Operating Area Fig.10 Maximum Continuous Drain Current vs. Ambient Temperature Fig.11 Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
AiT Semiconductor Inc. AM4559 www.ait-ic.com MOSFET P-CH and N-CH Fast Switching MOSFET REV1.0 - NOV 2022 RELEASED - - 7 - P-Channel Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS (th) vs. TJ Fig.6 Normalized RDSON vs. TJ
AiT Semiconductor Inc. AM4559 www.ait-ic.com MOSFET P-CH and N-CH Fast Switching MOSFET REV1.0 - NOV 2022 RELEASED - - 8 - Fig.7 Capacitance Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform
AiT Semiconductor Inc. AM4559 www.ait-ic.com MOSFET P-CH and N-CH Fast Switching MOSFET REV1.0 - NOV 2022 RELEASED - - 9 -
PACKAGE INFORMATION
Dimension in SOP8 Package (Unit: mm) Symbol Min. Max. A 1.350 1.750 A1 0.100 0.250 A2 1.350 1.550 b 0.330 0.510 c 0.170 0.250 D 4.700 5.100 E 3.800 4.000 E1 5.800 6.200 e 1.270(BSC) L 0.400 1.270 θ 0° 8°
AiT Semiconductor Inc. AM4559 www.ait-ic.com MOSFET P-CH and N-CH Fast Switching MOSFET REV1.0 - NOV 2022 RELEASED - - 10 -
AiT Semiconductor Inc. AM4559 www.ait-ic.com MOSFET P-CH and N-CH Fast Switching MOSFET REV1.0 - NOV 2022 RELEASED - - 11 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.