AM4502C-T1-PF

AM4502C-T1-PF VBSEMI | Alldatasheet

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Technical content

N- and P-Channel 30 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 6 1249 -2-21 Definition  TrenchFET® Power MOSFET  100 % Rg and UIS Tested  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 Motor Drive Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 12 0 °C/W (n-channel) and 110 °C/W (p-channel). e. Package limited. PRODUCT SUMMARY VDS (V) R DS(on) (Ω) ID (A)a Qg (Typ.) N-Channel 30 0.011 at VGS = 10 V 13.3 at VGS = 4.5 V 10 P-Channel - 30 0.021 at VGS = - 10 V 0.028 at VGS = - 4.5 V - 9.5 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 - 30 VGate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID A TC = 70 °C 9.8 - 8.8 TA = 25 °C 8.8b, c - 7.6b, c TA = 70 °C 7.4b, c - 6.3b, c Pulsed Drain Current (10 µs Pulse Width) IDM 60 - 60 Source-Drain Current Diode Current TC = 25 °C IS 3.6 - 3.6 TA = 25 °C 1.6b, c - 1.6b, c Pulsed Source-Drain Current ISM 60 - 60 Single Pulse Avalanche Current L = 0.1 mH IAS 20 - 20 Single Pulse Avalanche Energy EAS 52 0 m J Maximum Power Dis sipation TC = 25 °C PD 6.1 5.2 W TC = 70 °C 33 .1 TA = 25 °C 3b, c 3b, c TA = 70 °C 2.28b, c 2.28b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Ch a nnel Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 20 32.5 27 32.5 °C/WMaximum Junction-to-Foot (Drain) S teady State RthJF 10 20 19 28 - 10.5 - 10.511 0.013 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM4502C-T1-PF A ll data sheet.com

SPECIFICATIONS (TJ = 25 °C, un less otherwise noted) Parameter Symbol Test Co nditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA N-Ch 30 VVGS = 0 V, ID = - 250 µA P-Ch - 30 VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA N-Ch 30 mV/°C ID = - 250 µA P-Ch - 24 VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 µA N-Ch - 4.1 ID = - 250 µA P-Ch 5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 1 2.2 VVDS = VGS, ID = - 250 µA P-Ch - 0.9 - 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V N-Ch ± 100 nAVDS = 0 V, VGS = ± 20 V P-Ch ± 100 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V N-Ch 1 µA VDS = - 30 V, VGS = 0 V P-Ch - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V N-Ch 40 AVDS = - 5 V, VGS = - 10 V P-Ch - 40 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 6.8 A N-Ch 0.011 Ω VGS = - 10 V, ID = - 8 A P-Ch 0.021 VGS = 8 V, ID = 6.7 A N-Ch 0.012 VGS = - 8 V, ID = - 6.5 A P-Ch 0.024 VGS = 4.5 V, ID = 6.6 A N-Ch 0.013 VGS = - 4.5 V, ID = - 5 A P-Ch 0.028 Forward Transconductanceb gfs VDS = 15 V, ID = 6.8 A N-Ch 37 SVDS = - 15 V, ID = - 6.7 A P-Ch 35 Dynamica Input Capacitance Ciss N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz N-Ch 1421 pF P-Ch 1515 Output Capacitance Coss N-Ch 755 P-Ch 800 Reverse Transfer Capacitance Crss N-Ch 254 P-Ch 25 Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 10 A N-Ch 13.3 20 nC VDS = - 20 V, VGS = - 10 V, ID = - 10 A P-Ch 13 20 N-Channel VDS = 20 V, VGS = 4.5 V, ID = 10 A P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A N-Ch 6.5 10 P-Ch 21.7 33 Gate-Source Charge Qgs N-Ch 2.3 P-Ch 5.6 Gate-Drain Charge Qgd N-Ch 1.7 P-Ch 9.8 12.8 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM4502C-T1-PF A ll data sheet.com

Notes: a. Guaranteed by design, not subject to production te sting. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, un less otherwise noted) Parameter Symbo l Test Conditions Min. Typ.a Max. Unit Dynamica Tur n-On Del ay Time td(on) N-Channel VDD = 20 V, RL = 3.7 Ω ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω N-Ch 5 10 ns P-Ch 10 20 Rise Time tr N-Ch 10 20 P-Ch 9 18 Turn-O ff Delay Time td(off) N-Ch 16 25 P-Ch 50 90 Fall T ime tf N-Ch 7 14 P-Ch 13 26 Tur n- On Delay Time td(on) N-Channel VDD = 20 V, RL = 3.7 Ω ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω N-Ch 11 22 P-Ch 42 75 Rise Ti me tr N-Ch 12 22 P-Ch 40 70 Tur n-Off Delay Time td(off) N-Ch 17 26 P-Ch 40 70 Fall T ime tf N-Ch 7 14 P-Ch 18 35 Drain-Source Body Di ode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C N-Ch 5.6 AP-Ch - 5.6 Pulse Diode Forward Currenta ISM N-Ch 40 P-Ch - 40 Body Diode Voltage VSD IS = 5.4 A N-Ch 0.81 1.2 VIS = - 2 A P-Ch - 0.77 - 1.2 Body Diode Reverse Recovery Time trr N-Channel IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 17 34 nsP-Ch 41 80 Body Diode Rever se Recovery Charge Qrr N-Ch 10 20 nCP-Ch 32 65 Reverse Reco very Fall Time ta N-Ch 10 nsP-Ch 15 Reverse Recovery Rise Time tb N-Ch 7 P-Ch 26 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM4502C-T1-PF A ll data sheet.com

N-CHANNEL TYPICAL CHARACTERISTIC S (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Ch arge 0 0.5 1 1.5 2 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 4 V VGS = 3 V 0.011 0.012 0.014 0.016 0 10 20 30 40 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 8 V VGS = 4.5 V VGS = 10 V 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 10 V VDS = 20 V VDS = 30 V ID = 6.8 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 ID - Drain Cur rent (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 700 1100 1300 1500 1700 0 10 20 30 40 C - Capacitance (pF) VDS - Drain-to-S ource Voltage (V) Ciss Coss Crss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 RDS(on) - On-Resistan ce (Normalized) TJ - Junction Temperature (°C) ID = 6.8 A VGS = 10 V; 4.5 V 3 4 52 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM4502C-T1-PF A ll data sheet.com

CAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltag e Threshold Voltage 0.1 100 IS - Source Current (A) VSD - Source-to-Dr ain Voltage (V) TJ = 150 °C TJ = 25 °C 0.7 1.3 1.6 1.9 - 50 - 25 0 5025 75 100 125 150 VGS(th) (V) TJ - Temperature (°C) ID = 250 μA On-Resistance vs. Gate-to-Source Voltage Sing le Pulse Power, Junction-to-Ambient 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 6.8 A 0 111 0 0 .00 .01 Time (s) Power (W) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 0.1 100 0.1 1 10 100 ID - Drain Cur rent (A) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms TA = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 1 s DC 10 s www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM4502C-T1-PF A ll data sheet.com

N-CHANNEL TYPICAL CHARACTERISTIC S (25 °C, unless otherwise noted) * The power dissip at ion PD is based on T J(max) = 150 ° C , using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Power Derating, Junction-to -Foot 0 25 50 75 100 125 150 Power (W) TC - Case Temperature (°C) Power Derating, Juncti on-to-Ambient 0.0 0.25 0.50 0.75 1.0 1.25 0 25 50 75 100 125 150 Power (W) TA - Ambient Temperature (°C) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM4502C-T1-PF A ll data sheet.com

CAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Im pedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 120 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Imped ance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0. Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM4502C-T1-PF A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS ( 25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Ch arge VGS =1 0 V thru 4V VGS =3V VGS =2V VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 0.015 0.020 0.025 0.030 0 1 02 03 04 0 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 8 V VGS = 4.5 V VGS = 10 V 0 9 18 27 36 45 ID =1 0A VDS =1 5V VDS =2 4V VDS =1 0V Qg - Total Gate Charge (nC) VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Junction Tem perature 012345 TC = 125 °C TC = 25 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150ID =8A VGS =4 .5 V VGS =1 0V TJ - Junction Temperature (°C) (Normalized)RDS(on) - On-Resistance VDS - Drain-to-Source Vol tage (V) Capacitance 700 1100 1300 1500 1700 0 10 20 30 40 C - Capacitance (pF) Ciss Coss Crss www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM4502C-T1-PF A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unle ss otherwise noted) Source-Drain Diode Forward Voltag e Threshold Voltage 0.01 0.001 0.1 100 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) IS - Source Current (A) - 0.4 - 0.1 0.2 0.5 0.8 - 50 - 25 0 25 50 75 100 125 150 ID =5m A ID = 250 μA VGS(th) Variance (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Sing le Pulse Power, Junction-to-Ambient 0.00 0.03 0.06 0.09 0.12 0.15 012 345 67 89 1 0 TJ =2 5 ° C TJ = 125 °C ID =8A RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) 0 111 0 0 .00 .01 0.1 Time (s) Power (W) Safe Operating Area, Junction-to-Ambient 0.01 100 100 0.01 0.1 10 s 10 ms 0.1 1 10 TA = 25 °C Single Pulse 1m s DCBVDSS Limited 100 ms Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM4502C-T1-PF A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS ( 25 °C, unless otherwise noted) * The power dissip at ion PD is based on T J(max) = 150 ° C , using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Power Derating, Junction-to -Foot 0.0 0.8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power Derating, Juncti on-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power (W) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM4502C-T1-PF A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unle ss otherwise noted) Normalized Thermal Transient Im pedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit B ase = RthJA = 110 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Imped ance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM4502C-T1-PF A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.007 5 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM4502C-T1-PF A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM4502C-T1-PF A ll data sheet.com