AM4501 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM4501 MOSFET P & N-CHANNEL REV1.0 - JAN 2019 RELEASED - - 1 - DESCRIPTION FEATURES These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC -DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. The AM4501 is available in SOP8 package.
ORDERING INFORMATION
SPQ: 4,000pcs/Reel AM4501M8R AM4501M8VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOP8 saves board space Fast switching speed High performance trench technology Available in SOP8 Package
APPLICATIONS
LED Application Portable Equipment DC-DC Power Management TYPICAL APPLICATION
AiT Semiconductor Inc. www.ait-ic.com AM4501 MOSFET P & N-CHANNEL REV1.0 - JAN 2019 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S NMOS Source
2 G NMOS Gate
3 S PMOS Source
4 G PMOS Gate
5 D PMOS Drain
6 D PMOS Drain
7 D NMOS Drain
8 D NMOS Drain
AiT Semiconductor Inc. www.ait-ic.com AM4501 MOSFET P & N-CHANNEL REV1.0 - JAN 2019 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted Parameter N-Channel P-Channel Units VDS, Drain-Source Voltage 30 -30 V VGS, Gate-Source Voltage ±20 ±20 V ID, Continuous Drain CurrentNOTE1 TA = 25°C 10 -9.0 A TA= 70°C 7.8 -6.9 IDM, Pulsed Drain CurrentNOTE2 40 -35 A IS, Continuous Source Current (Diode Conduction)NOTE1 3.3 -2.1 A PD, Power DissipationNOTE1 TA = 25°C 2.1 2.1 W TA= 70°C 1.3 1.3 TJ, TSTG, Operating Junction and Storage Temperature Range −55°C ~ +150°C °C Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE Parameter Symbol Min Typ Max Units Maximum Junction-to-AmbientNOTE1 t≦10s RθJA - - 62.5 °C/W Steady-State - - 110 NOTE1: Surface Mounted on 1” x 1” FR4 Board. NOTE2: Pulse width limited by maximum junction temperature
AiT Semiconductor Inc. www.ait-ic.com AM4501 MOSFET P & N-CHANNEL REV1.0 - JAN 2019 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted Parameter Symbol Conditions Limits Units Ch Min Typ Max Static Gate-Threshold Voltage VGS(th) VGS=VDS, IDS=250μA N 1 - 3 V VGS=VDS, IDS=-250μA P -1 - -3 Gate-Body Leakage IGSS VGS=-20V, VDS=0V P - - ±1000 nA VGS=20V, VDS=0V N - - ±1000 Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V P - - -1 μA VDS=24V, VGS=0V N - - 1 On-State Drain CurrentNOTE3 ID(on) VDS=5V, VGS=10V N 40 - - A VDS=-5V, VGS=-10V P -35 - - Drain-source On-ResistanceNOTE3 RDS(ON) VGS=10V IDS=7.1A N - 11 16 mΩ VGS=4.5V, IDS=5.8A - 16 22 VGS=-10V IDS=-6A P - 21 26 VGS=-4.5V, IDS=-4.9A - 32 39 Forward TranconductanceNOTE3 Gfs VDS=15V, ID=6.9A N - 13 - S VDS=-15V, ID=-5.2A P - 8 - DynamicNOTE4 Total Gate Charge Qg N-Channel VDS=15V, VGS=10V, ID=6.9A P-Channel VDS=-15V, VGS=-10V, ID=-5.2A N - 16 - nC P - 19 - Gate-Source Charge Qgs N - 4.9 - P - 4.7 - Gate-Drain Charge Qgd N - 3.5 - P - 7.7 - Turn-On Delay Time td(on) N-Channel VDD=15V, VGS=10V, ID=1A, RGEN=6Ω P-Channel VDD=-15V, VGS=-10V, ID=-1A, RGEN=6Ω N - 6 - ns P - 6 - Rise Time tr N - 6 - P - 5 - Turn-Off Delay Time td(off) N - 29 - P - 53.6 - Fall-Time tf N - 8 - P - 21 - NOTE3: Pulse test: Pulse Width ≦ 300us duty cycle ≦ 2%. NOTE4: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM4501 MOSFET P & N-CHANNEL REV1.0 - JAN 2019 RELEASED - - 5 - TYPICAL ELECTRICAL CHARACTERISTICS P-Channel 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance
AiT Semiconductor Inc. www.ait-ic.com AM4501 MOSFET P & N-CHANNEL REV1.0 - JAN 2019 RELEASED - - 6 - 7. Gate Charge 8. Normalized On-Resistance vs. Junction Temperature 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 11. Normalized Thermal Transient Junction to Ambient
AiT Semiconductor Inc. www.ait-ic.com AM4501 MOSFET P & N-CHANNEL REV1.0 - JAN 2019 RELEASED - - 7 - N-Channel 12. On-Resistance vs. Drain Current 13. Transfer Characteristics 14. On-Resistance vs. Gate-to-Source Voltage 15. Source-to-Drain Forward Voltage 16. Output Characteristics 17. Capacitance
AiT Semiconductor Inc. www.ait-ic.com AM4501 MOSFET P & N-CHANNEL REV1.0 - JAN 2019 RELEASED - - 8 - 18. Gate Charge 19. Normalized On-Resistance vs. Junction Temperature 20. Safe Operating Area 21. Single Pulse Maximum Power Dissipation 22. Normalized Thermal Transient Junction to Ambient
AiT Semiconductor Inc. www.ait-ic.com AM4501 MOSFET P & N-CHANNEL REV1.0 - JAN 2019 RELEASED - - 9 -
PACKAGE INFORMATION
Dimension in SOP8 Package (Unit: mm) Land Pattern (Only for Reference) Symbol Min. Max. A 1.35 1.75 A(1) 0.10 0.25 B 0.38 0.51 C 0.19 0.25 D 4.80 5.00 E 3.80 4.00 e 1.27 BSC H 5.80 6.20 L 0.50 0.93 α 0° 8° h 0.25 0.50
AiT Semiconductor Inc. www.ait-ic.com AM4501 MOSFET P & N-CHANNEL REV1.0 - JAN 2019 RELEASED - - 10 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in li fe support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or appli cation support. AiT warrants the performance of its products of the specifications applicable at the time of sale.