AM4452

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AiT Semiconductor Inc. www.ait-ic.com AM4452 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - AUG 2021 RELEASED - - 1 - DESCRIPTION FEATURES VDS=20V VGS=±8V ID(A)=0.83A R DS(ON)=200mΩ(Typ.)@VGS=4.5V RDS(ON)=245mΩ(Typ.)@VGS=2.5V RDS(ON)=310mΩ(Typ.)@VGS=1.8V RDS(ON)=380mΩ(Typ.)@VGS=1.5V RDS(ON)=680mΩ(Typ.)@VGS=1.2V The AM4452 is available in SC89-3 package.

ORDERING INFORMATION

SPQ:3,000pcs/Reel CK3 AM4452CK3R AM4452CK3VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products  High-speed switching, Low On-resistance  1.2V Low gate drive  ESD protected  Available in SC89-3 package

APPLICATIONS

 Hand-Held Instruments  Switching application N-CHANNEL MOSFET

AiT Semiconductor Inc. www.ait-ic.com AM4452 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - AUG 2021 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM4452 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - AUG 2021 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C VDSS, Drain-Source Voltage 20V VGSS, Gate-Source Voltage ±8V ID, Continuous Drain Current TA = 25°C 0.83A TA = 70°C 0.67A IDM, Pulsed Drain CurrentNOTE2 1 . 8 A PD, Power DissipationNOTE1 TA = 25°C 0.3W TA = 70°C 0.19W TJ, Operation Junction Temperature -55°C ~ 150°C TSTG, Storage Temperature Range -55°C ~ 150°C Stress beyond above listed “Absolut e Maximum Ratings” may lead permanent damage to the device. These are stress ratings only a nd operations of the device at these or any other conditions beyond those indicated in the operati onal sections of the specificat ions are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS Parameter Symbol Typ Max Unit Thermal Resistance Junction to AmbientNOTE1, 3 Steady-State RθJA - 415 °C/W NOTE1: Surface mounted on FR4 board using 1 in2 pad size. NOTE2: Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C (initial temperature TJ=25°C). NOTE3: Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C.

AiT Semiconductor Inc. www.ait-ic.com AM4452 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - AUG 2021 RELEASED - - 4 -

ELECTRICAL CHARACTERISTICS

TA=25°C, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Parameters Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250μA 20 - - V Gate Threshold Voltage V GS(th) V DS=VGS, ID=250μA 0.3 0.6 1 V Gate Leakage Current I GSS V DS=0V, VGS=±8V - - ±10 μA Zero Gate Voltage Drain Current I DSS VDS=20V, VGS=0V, TJ=25°C - - 1 μA VDS=12V, VGS=0V, TJ=85°C - - 10 Drain-source On-ResistanceNOTE4 R DS(ON) VGS=4.5V, ID=0.83A - 200 270 mΩ VGS=2.5V, ID=0.5A - 245 380 VGS=1.8V, ID=0.3A - 310 500 VGS=1.5V, ID=0.2A - 380 600 VGS=1.2V, ID=0.1A - 680 1000 Forward Transconductance Gfs V DS=5V, ID=0.5A - 1.7 - S Diode Characteristics Diode Forward VoltageNOTE4 V SD I S=0.2A, VGS=0V - - 1 V Diode Continuous Forward Current I S - - 0.42 A Reverse Recovery Time t rr IS=0.5A,dl/dt=100A/μs - 8.8 - ns Reverse Recovery Charge Q rr - 0 . 8 - n C Dynamic and Switching ParametersNOTE5 Total Gate Charge Q g VDS=10V, VGS=4.5V, ID=0.5A - 0.97 - nC Gate-Source Charge Q gs - 0.28 - Gate-Drain Charge Q gd - 0.12 - Input Capacitance C iss VDS=10V, VGS=0V, f=1MHz - 42 - pF Output Capacitance C oss - 9 - Reverse Transfer Capacitance C rss - 6 - Turn-On Time td(on) VDD=10V, VGS=4.5V RG=6Ω, ID=0.5A - 6 11 ns tr - 3 . 8 7 Turn-Off Time td(off) - 1 4 2 3 tf - 1 5 2 9 NOTE4: Pulse test width ≤300μs and duty cycle ≤ 2%. NOTE5: Guaranteed by design, not subject to production testing.

AiT Semiconductor Inc. www.ait-ic.com AM4452 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - AUG 2021 RELEASED - - 5 - TYPICAL ELECTRICAL CHARACTERISTICS 1. Output Characteristics 2 . Drain-Source On Resistance 3. Gate Charge 4. Capacitance 5. Gate Threshold Voltage 6. Power Dissipation

AiT Semiconductor Inc. www.ait-ic.com AM4452 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - AUG 2021 RELEASED - - 6 - 7. Drain-Source On Resistance 8. Drain Current vs TJ 9. Maximum Safe Operation Area 10. Thermal Transient Impedance 11. Gate Charge Waveform 12. Switching Time Waveform

AiT Semiconductor Inc. www.ait-ic.com AM4452 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - AUG 2021 RELEASED - - 7 -

PACKAGE INFORMATION

Dimension in SC89-3 Package (Unit: mm) Symbol Millimeters Inches Min Max Min Max A 0.700 0.900 0.028 0.035 A1 0.000 0.100 0.000 0.004 A2 0.700 0.800 0.028 0.031 b 0.250 0.350 0.100 0.014 c 0.100 0.200 0.004 0.008 D 1.500 1.750 0.059 0.069 E 0.700 0.900 0.028 0.035 E1 1.400 1.750 0.055 0.069 e 0.500 TYP 0.020 TYP e1 0.900 1.100 0.035 0.043 L 0.300 0.460 0.012 0.018 L1 0.260 0.460 0.010 0.018 θ 0° 8 0° 8

AiT Semiconductor Inc. www.ait-ic.com AM4452 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - AUG 2021 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circu it product or service without n otice, and advises its customers to obtain the latest version of relevant information to verify, before placin g orders, that the information being relied on is current. AiT Semiconductor Inc.'s integrat ed circuit products are not de signed, intended, authorized, or warranted to be suitable for use in life support applications, devices or sy stems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the custom er's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to customer prod uct design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.