AM4409 AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com AM4409 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2017 RELEASED - - 1 - DESCRIPTION FEATURES The AM4409 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on -state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching AM4409 is available in SOP8 package.  -30V/-15A, RDS(ON)=5.5mΩ(typ.)@VGS=-10V  -30V/-10A, RDS(ON)=6.5mΩ(typ.)@VGS=-4.5V  Super high design for extremely low RDS(ON)  Exceptional on -resistance and Maximum DC current capability  ESD Protected: 3kV  Available in SOP8 package. ORDERING INFORMATION APPLICATION Package Type Part Number SOP8 SPQ: 3,000pcs/Reel AM4409M8R AM4409M8VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products  High Frequency Point-of-Load Synchronous  Networking DC-DC Power System  Load Switch PIN DESCRIPTION

AiT Semiconductor Inc. www.ait-ic.com AM4409 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2017 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 S Source

2 S Source

3 S Source

4 G Gate

5 D Drain

6 D Drain

7 D Drain

8 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM4409 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2017 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage -30V VGSS, Gate-Source Voltage ±20V ID, Continuous Drain Current(VGS=10V) TA=25℃ -17A IDM, Pulsed Drain Current -80A IS, Continuous Source Current (Diode Conduction) -2.7A PD, Power Dissipation TA=25oC 3.0W TA=70℃ 2.1W TJ, Operation Junction Temperature 150℃ TSTG, Storage Temperature Range -55℃~150℃ RθJA, Thermal Resistance Junction to Ambient 85°C/W Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

AiT Semiconductor Inc. www.ait-ic.com AM4409 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2017 RELEASED - - 4 -

ELECTRICAL CHARACTERISTICS

TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,IDS=-250μA -30 - - V Gate Threshold Voltage VGS(th) VDS=VGS,IDS=-250μA -1.0 -1.3 -2.0 V Gate Leakage Current IGSS VDS=0V, VGS=±16V - - ±10 μA Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - - ±1 μA TJ=55°C - - ±5 Drain-Source On-state Resistance RDS(ON) VGS=-20V,IDS=-15A - 5.5 8.0 mΩ VGS=-10V,IDS=-10A - 7.0 9.0 Source-Drain Diode Diode Forward Voltage VSD ISD=-1.0A,VGS=0V - -0.71 -1.0 V Dynamic Parameters Total Gate Charge Qg VDS=-15V, VGS=-4.5V, IDS=-15A - 37.08 48.2 nC Gate-Source Charge Qgs - 10.12 13.16 Gate-Drain Charge Qgd - 11.24 14.61 Input Capacitance Ciss VDS=-15V, VGS=0V, f=1.0MHz - 3887 - pF Output Capacitance Coss - 577 - Reverse Transfer Capacitance Crss - 425 - Turn-on Time td(on) VDS=-15V, ID=-10A, VGEN=-10V, RG=6Ω - 19.52 39.04 ns tr - 10.12 20.34 Turn-off Time td(off) - 137.6 275.2 tf - 55.32 110.64 NOTE1: Pulse test; pulse width≤ 300μs, duty cycle≤ 2%. NOTE2: Static parameters are based on package level with recommended wire bonding

AiT Semiconductor Inc. www.ait-ic.com AM4409 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2017 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. On-Region Characteristics 2. Transfer Characteristics 3. On-Resistance vs. Drain Current and Gate Voltage 4. On-Resistance vs. Junction Temperature 5. On-Resistance vs. Gate-Source Voltage 6. Body-Diode Characteristics

AiT Semiconductor Inc. www.ait-ic.com AM4409 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2017 RELEASED - - 6 - 7. Gate-Charge Characteristics 8. Capacitance Characteristics 9. Maximum Forward Biased Safe Operating Area 10. Single Pulse Power Rating Junction-to-Ambient 11. Normalized Maximum Transient Thermal Impedance

AiT Semiconductor Inc. www.ait-ic.com AM4409 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2017 RELEASED - - 7 -

PACKAGE INFORMATION

Dimension in SOP8 Package (Unit: mm) Symbol Millimeters Inches MIN. MAX. MIN. MAX. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8°

AiT Semiconductor Inc. www.ait-ic.com AM4409 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2017 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain th e latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use i n life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or server e property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design o r application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.