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AiT Semiconductor Inc. www.ait-ic.com AM4407 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2010 RELEASED – - 1 - DESCRIPTION FEATURES The AM4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. The AM4407 is available in SOP8 Package
ORDERING INFORMATION
R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package 30V/-12.0A, RDS(ON) = 12mΩ(typ)@VGS =-10V -30V/-7.5A, RDS(ON) = 19mΩ(typ)@VGS =-4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Available in SOP8 Package APPLICATION High Frequency Point-of-Load Synchronous New working DC-DC Power System Load Switch P CHANNEL MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM4407 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2010 RELEASED – - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
Thermal Resistance-Junction to Ambient RθJA 85 °C/W Thermal Resistance-Junction to Case RθJC 28 °C/W
AiT Semiconductor Inc. www.ait-ic.com AM4407 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2010 RELEASED – - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C Unless otherwise specified VDSS, Drain-Source Voltage 30V VGSS, Gate-Source Voltage ±20V ID, Continuous Drain Current, VGS=10VNOTE1 TA=25°C 12A IDM, Pulsed Drain CurrentNOTE2 30A PD, Power Dissipation TA=25°C 3.2W TA=70°C 2W TJ, Operation Junction Temperature -55/150°C TSTG, Storage Temperature Range -55/150°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. NOTE2: The data tested by pulsed , pulse width≦300us , duty cycle≦2%
AiT Semiconductor Inc. www.ait-ic.com AM4407 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2010 RELEASED – - 4 -
ELECTRICAL CHARACTERISTICS
TJ = 25°C Unless otherwise specified Parameter Symbol Conditions Min Typ Max Unit Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250μA -30 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250μA -1.0 - -2.5 V Gate Leakage Current IGSS VDS=0V,VGS=±20V - - ±100 nA Zero Gate Voltage Drain Current I DSS VDS=-24V,VGS=0V - - -1 µA VDS=-24V,VGS=0V TJ=55°C - - -5 Drain-source On-Resistance RDS(ON) VGS=-10V,ID=-12A - 12 15 mΩ VGS=-4.5V, ID=-7.5A - 19 25 Forward Transconductance Gfs VDS=-5V,ID=-30.0A - 24 - S Source-Drain Diode Diode Forward Voltage VSD IS=-2.3A,VGS=0V - -0.75 -1.0 V Dynamic Parameters Total Gate Charge Qg VDS=-15V VGS=4.5V ID=-12A - 21 - nC Gate-Source Charge Qgs - 5.2 - Gate-Drain Charge Qgd - 7.5 - Input Capacitance Ciss VDS=-15V VGS=0V f=1MHz - 2220 - pF Output Capacitance Coss - 320 - Reverse Transfer Capacitance C rss - 235 - Turn-On Time td(on) VDD=15V VGS=-10V ID=-5A, RG=3.3Ω - 34 - nS tr - 35 - Turn-Off Time td(off) - 70 - tf - 12 -
AiT Semiconductor Inc. www.ait-ic.com AM4407 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2010 RELEASED – - 5 - TYPICAL CHARACTERISTICS TA=25°C Unless specified 1. Output Characteristics 2. Drain-Source On Resistance 3. Drain Source On Resistance 4. Transfer Characteristics 5. Gate Charge 6. Drain Source Resistance
AiT Semiconductor Inc. www.ait-ic.com AM4407 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2010 RELEASED – - 6 - 7. Source Drain Diode Forward 8. Capacitance 9. Power Dissipation 10. Drain Current 11. Thermal Transient Impedance
AiT Semiconductor Inc. www.ait-ic.com AM4407 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2010 RELEASED – - 7 -
PACKAGE INFORMATION
Dimension in SOP8 (Unit: mm) Symbol Min Max A 1.350 1.750 A1 0.100 0.250 A2 1.350 1.550 b 0.330 0.510 c 0.170 0.250 D 4.700 5.100 E 3.800 4.000 E1 5.800 6.200 e 1.270(BSC) L 0.400 1.270 θ 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM4407 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2010 RELEASED – - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assum es to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.