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AiT Semiconductor Inc. www.ait-ic.com AM4406 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - APR 2013 RELEASED, FEB 2015 UPDATED - - 1 - DESCRIPTION FEATURES The AM4406 is available in SOP8 Package 30V/12A, RDS(ON)= 11.5mΩ(max.) @ VGS= 10V RDS(ON)= 15.5mΩ(max.) @ VGS= 4.5V Reliable and Rugged Available in SOP8 Package
ORDERING INFORMATION
V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package APPLICATION Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. PIN DESCRIPTION N-Channel MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM4406 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - APR 2013 RELEASED, FEB 2015 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM4406 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - APR 2013 RELEASED, FEB 2015 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃ Unless Otherwise Noted VDSS, Drain-Source Voltage 30V VGSS, Gate-Source Voltage ±20V IDNOTE1, Continuous Drain Current (VGS=10V) TA=25°C 12A TA=70°C 10A IDMNOTE1, 300μs Pulsed Drain Current (VGS=10V) 40A IS NOTE1, Diode Continuous Forward Current 1A IASNOTE2, Avalanche Current (Single Pulse) 23A EAS NOTE2, Avalanche Energy, Single Pulse (L=0.1mH) 25mJ TJ, Maximum Junction Temperature 150℃ TSTG, Storage Temperature Range -55℃~150℃ PD NOTE1, Maximum Power Dissipation TA=25°C 3.1W TA=70°C 2.0W RθJA NOTE1,3, Thermal Resistance-Junction to Ambient t ≤10s 32℃/W Steady State 65℃/W RθJL, Thermal Resistance-Junction to Lead Steady State 20℃/W Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Surface Mounted on 1in2 pad area, t≤10sec. Maximum Power dissipation is calculated from RθJA (worst)=40°C/W under t ≤10s. NOTE2: UIS tested and pulse width limited by maximum junction temperature 150℃ (initial temperature TJ=25℃). NOTE3: Maximum under Steady State conditions is 75°C/W.
AiT Semiconductor Inc. www.ait-ic.com AM4406 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - APR 2013 RELEASED, FEB 2015 UPDATED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25°C Unless Otherwise Noted Parameter Symbol Conditions Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=250μA 30 - - V Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V - - 1.0 μA TJ=85°C - - 30 Gate Threshold Voltage VGS(th) VDS=VGS,IDS=250μA 1.3 1.9 2.5 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Drain-Source On-state Resistance RDS(ON) NOTE4 VGS=10V,IDS=12A - 9.5 11.5 mΩ VGS=4.5V,IDS=10A - 12.5 15.5 Forward Transconductance Gfs VDS=5V, IDS=20A - 50 - S Diode Characteristics Diode Forward Voltage VSDNOTE4 ISD=1A,VGS=0V - 0.7 1.1 V Reverse Recovery Time trrNOTE5 ISD=12A, dlSD/dt=100A/μs - 19 - ns Reverse Recovery Charge QrrNOTE5 - 10 - nC Dynamic CharacteristicsNOTE5 Gate Resistance RG VGS=0V,VDS=0V,F=1MHz - 2.5 - Ω Input Capacitance Ciss VGS=0V, VDS=15V, Frequency=1.0MHz - 770 - pF Output Capacitance Coss - 130 - Reverse Transfer Capacitance Crss - 76 - Turn-on Delay Time td(ON) VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω - 8 14 ns Turn-on Rise Time tr - 10 17 Turn-off Delay Time td(OFF) - 23 42 Turn-off Fall Time tf - 4.5 12 Gate Charge CharacteristicsNOTE5 Total Gate Charge Qg VDS=15V, VGS=10V, IDS=12A - 14 18 nC Total Gate Charge VDS=15V, VGS=4.5V, IDS=12A - 6.3 - Gate-Source Charge Qgs - 2.9 - Gate-Drain Charge Qgd - 2 - NOTE4: Pulse test: pulse width ≤300us, duty cycle≤ 2% NOTE5: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM4406 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - APR 2013 RELEASED, FEB 2015 UPDATED - - 5 - TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM4406 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - APR 2013 RELEASED, FEB 2015 UPDATED - - 6 - 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge
AiT Semiconductor Inc. www.ait-ic.com AM4406 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - APR 2013 RELEASED, FEB 2015 UPDATED - - 7 - DETAILED INFORMATION Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM4406 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - APR 2013 RELEASED, FEB 2015 UPDATED - - 8 -
PACKAGE INFORMATION
Dimension in SOP8 (Unit: mm) Symbol Min Max A - 1.750 A1 0.100 0.250 A2 1.250 - b 0.310 0.510 c 0.170 0.250 D 4.800 5.000 E 5.800 6.200 E1 3.800 4.000 e 1.270(BSC) h 0.250 0.500 L 0.400 1.270 θ 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM4406 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - APR 2013 RELEASED, FEB 2015 UPDATED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor I nc.'s integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be ful ly at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server s property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.