AM42-0046 MA-COM | Alldatasheet
Document overview
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Technical content
Features
- High Linear Gain: 30 dB Typical
- High Saturated Output Power: +36 dBm Typical
- High Power Added Efficiency: 25% Typical
- 50 Ω Input / Output Broadband Matched
- Integrated Output Power Detector
- Lead-Free Bolt Down Ceramic Package
- RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM’s AM42-0046 is a three stage MMIC power amplifier in a lead-free, bolt down ceramic package, allowing easy assembly. The AM42-0046 employs a fully matched chip with internally decoupled gate and drain bias networks. The AM42-0046 is designed to operate from a constant current drain supply or a constant voltage gate supply. By varying the bias conditions, the saturated output power performance of this device may be tailored for various applications. The AM42-0046 is ideally suited for use as an output stage or a driver amplifier in VSAT systems. The AM42-0046 includes internal supply line bypassing in the package, minimizing the number of external components required. M/A-COM's AM42-0046 is fabricated using a mature 0.5 micron MBE based GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications.
Ordering Information
Pin No. Pin Name Description
1 V DD1,2 1st and 2nd Stage Drain Supply
2 GND DC and RF Ground
3 RF IN RF Input
4 V GG Gate Supply
5 GND DC and RF Ground
6 GND DC and RF Ground
7 V DET Output Power Detector
8 RF OUT RF Output
9 V DD3 3rd Stage Drain Supply
10 V DD1,2 1st and 2nd Stage Drain Supply
Flange GND DC and RF Ground Functional Schematic VDD1,2 RFOUT VDETVGG RFIN GND VDD1,2 GND GND VDD3 VDD1,2 RFOUT VDETVGG RFIN GND VDD1,2 GND GND VDD3 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
4 Watt Extended C-Band VSAT Power Amplifier
5.9 - 7.1 GHz Rev. V3 AM42-0046 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Electrical Specifications: Frequency = 5.9 - 7.1 GHz, VDD1,2,3 = +8 VDC; VGG = -5 VDC; TA = 25°C, Z0 = 50 Ω Parameter Test Conditions Units Min. Typ. Max. Linear Gain Pin = -4 dBm dB 27 30 — Input VSWR Pin = -4 dBm Ratio — 2.5:1 3.0:1 Output VSWR Pin = -4 dBm Ratio — 2.5:1 — Output Power Pin = +8 dBm, Ids = 1900 mA Typ. dBm 35 36.0 — Output Power vs. Frequency Pin = +8 dBm, Ids = 1900 mA Typ. (5.9 to 6.4 GHz) Pin = +8 dBm, Ids = 1900 mA Typ. (6.4 to 7.1 GHz) dB dB ±0.3 ±0.3 ±1.25 ±1.25 Drain Bias Current Pin = +8 dBm mA — 1900 2200 Gate Bias Current Pin = +8 dBm, Ids = 1900 mA Typ. mA — 10 25 Detector Voltage Pin = +8 dBm, Ids = 1900 mA Typ. V 2.0 4.0 — Operating the AM42-0046 To operate the AM42-0046, follow these steps. 1. Apply -5.0 Volts to V GG. 2. Ramp V DD to +8 V. 3. Apply RF. 4. Power down in reverse sequence. Turn gate voltage off last. 4. External DC blocking capac itors required on the RF ports. Application Schematic 4 Parameter Absolute Maximum Input Power +15 dBm Operating Voltages 0 V < VDD < 10 V -6 V < VGG < -3 V Ids 2300 mA Channel Temperature +150°C Operating Temperature -40°C to +80°C Storage Temperature -65°C to +150°C Absolute Maximum Ratings 1,2,3 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM does not recommend sustained operation near these survivability limits. 3. Adequate heat sinking and grounding required on flange base. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. RF Out RF In 1.0 µF VGG GND 2,5,6 100 pF 100 pF VDD 1,2 1 or 10 1.0 µF 0.01 µF AM42-0046 VDET VDD3
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
5.9 - 7.1 GHz Rev. V3 AM42-0046 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Typical Performance Curves POUT vs. Frequency S21 vs. Frequency Frequency (GHz) Frequency (GHz) Lead-Free CR-15† † Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements.