AM42-0040_1 MACOM | Alldatasheet

Document overview

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Technical content

Features

  • High Linear Gain: 30 dB Typical
  • High Saturated Output Power: +33 dBm Typ.
  • High Power Added Efficiency: 26% Typ.
  • 50 Ω Input/Output Broadband Matched
  • Lead-Free Ceramic Bolt Down Package
  • RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM’s AM42-0040 is a three-stage MMIC power amplifier in a lead-free, ceramic bolt down style hermetic package. The AM42-0040 employs an internally matched monolithic chip with internally decoupled Gate and Drain bias networks. The AM42-0040 is designed to be operated from a constant current Drain supply. By varying the Gate bias voltage, the saturated output power performance of this device can be tailored for various applications. The AM42-0040 is designed for use as an output stage or driver amplifier for C-band VSAT transmitter systems. This amplifier employs a fully monolithic chip and requires a minimum of external components. M/A-COM’s AM42-0040 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications.

Ordering Information

AM42-0040 Ceramic Bolt Down Package Pin Configuration Pin No. Pin Name Description

1 N/C No Connection

2 GND DC and RF Ground

3 RF In RF Input

4 GND DC and RF Ground

5 VGG Gate Supply

6 N/C No Connection

7 VDET Detector

8 RF Out RF Output

9 GND DC and RF Ground

10 VDD Drain Supply

  • Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz AM42-0040 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Typical Bias Configuration4,5,6,7,8 Absolute Maximum Ratings 1,2,3 Parameter Absolute Maximum Input Power +23 dBm VDD +12 Volts VGG -3 Volts VDD - VGG +12 Volts IDD 1700 mA Channel Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM does not recommend sustained operation near these survivability limits. 3. Case Temperature (T C) = +25°C. Electrical Specifications: TA = 25°C, VDD = +9 V, VGG adjusted for IDD = 1050 mA Parameter Test Conditions Units Min. Typ. Max. Linear Gain PIN < -10 dBm dB 27 30 — Input VSWR PIN < -10 dBm Ratio — 2.3:1 2.7:1 Output VSWR PIN < -10 dBm Ratio — 3.0:1 — Output Power PIN = +10 dBm, IDD = 1050 mA Typ. dBm 31.7 33.0 34.5 Output Power vs. Frequency PIN = +10 dBm, IDD = 1050 mA Typ. dB — 1.0 1.5 Output Power vs. Temperature (with respect to TA = 25°C) PIN = +10 dBm, IDD = 1050 mA Typ. TA = -40°C to +70°C dB — ±0.4 — Drain Bias Current PIN = +10 dBm mA 900 1050 1100 Gate Bias Voltage PIN = +10 dBm, IDD = 1050 mA Typ. V -2.4 -1.2 -0.4 Gate Bias Current PIN = +10 dBm, IDD = 1050 mA Typ. mA — 5 20 Thermal Resistance 25°C Heat Sink °C/W — 5.6 — Second Harmonic PIN = +10 dBm, IDD = 1050 mA Typ. dBc — -35 — Third Harmonic PIN = +10 dBm, IDD = 1050 mA Typ. dBc — -45 — VDET V 2 — — 4. Nominal bias is obtained by first connecting -2.4 volts to pin 5 (VGG), followed by connection +9 volts to pin 10 (VDD). Note sequence. Adjust VGG for a drain current of 1050 mA typical. 5. RF ground and thermal interface is the flange (case bot- tom). Adequate heat sinking is required. 6. No DC bias voltage appears at the RF ports. 7. For optimum IP3 performance, the V DD bypass capacitors should be placed within 0.5 inches of the VDD leads. 8. Resistor and capacitors surrounding the amplifier are suggestions and not included as part of the AM42-0040.

GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz AM42-0040 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Input and Output Return Loss vs. Frequency Output Power vs. Input Power @ 6.15 GHz PAE vs. Input Power @ 6.15 GHz Typical Performance Curves @ +25°C Output Power vs. Frequency @ PIN = +10 dBm PAE vs. Frequency @ PIN = +10 dBm Linear Gain vs. Frequency -40 -30 -20 -10 Frequency (GHz) Frequency (GHz) -35 -30 -25 -20 -15 -10 S11 S22 Frequency (GHz) Frequency (GHz) 02468 1 0 1 2 1 4 PIN (dBm) 02468 1 0 1 2 1 4 PIN (dBm)

GaAs MMIC VSAT Power Amplifier, 2.0 W 5.9 - 6.4 GHz AM42-0040 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Lead-Free CR-15† Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. † Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements.