AM42-0040 MA-COM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • High Linear Gain: 30 dB Typical
  • High Saturated Output Power: +33 dBm Typ.
  • High Power Added Efficiency: 26% Typ.
  • 50 Ω Input/Output Broadband Matched
  • Lead-Free Ceramic Bolt Down Package
  • RoHS* Compliant and 260°C Reflow Compatible

Description

The AM42-0040 is a three-stage MMIC power amplifier in a lead-free, ceramic bolt down style hermetic package. The AM42-0040 employs an internally matched monolithic chip with internally decoupled Gate and Drain bias networks. The AM42-0040 is designed to be operated from a constant current Drain supply. By varying the Gate bias voltage, the saturated output power performance of this device can be tailored for various applications. The AM42-0040 is designed for use as an output stage or driver amplifier for C-band VSAT transmitter systems. This amplifier employs a fully monolithic chip and requires a minimum of external components. The AM42-0040 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications.

Ordering Information

AM42-0040 Ceramic Bolt Down Pin Configuration Pin No. Pin Name Description

1 N/C No Connection

2 GND DC and RF Ground

3 RF In RF Input

4 GND DC and RF Ground

6 N/C No Connection

7 V DET Detector

8 RF Out RF Output

9 GND DC and RF Ground

10 V DD Drain Supply

  • Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

GaAs MMIC VSAT Power Amplifier 2.0 W 5.9 - 6.4 GHz Rev. V5 AM42-0040 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Typical Bias Configuration4,5,6,7,8 Absolute Maximum Ratings 1,2,3 Parameter Absolute Maximum Input Power +23 dBm VDD +12 Volts VGG -3 Volts VDD - VGG +12 Volts IDD 1700 mA Channel Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM Technology does not recommend sustained operation near these survivability limits. 3. Case Temperature (TC) = +25°C. Electrical Specifications: TA = 25°C, VDD = +9 V, VGG adjusted for IDD = 1050 mA Parameter Test Conditions Units Min. Typ. Max. Linear Gain P IN < -10 dBm dB 27 30 — Input VSWR P IN < -10 dBm Ratio — 2.3:1 2.7:1 Output VSWR P IN < -10 dBm Ratio — 3.0:1 — Output Power P IN = +10 dBm, IDD = 1050 mA Typ. dBm 31.7 33.0 34.5 Output Power vs. Frequency P IN = +10 dBm, IDD = 1050 mA Typ. dB — 1.0 1.5 Output Power vs. Temperature (with respect to TA = 25°C) PIN = +10 dBm, IDD = 1050 mA Typ. TA = -40°C to +70°C dB — ±0.4 — Drain Bias Current P IN = +10 dBm mA 900 1050 1100 Gate Bias Voltage P IN = +10 dBm, IDD = 1050 mA Typ. V -2.4 -1.2 -0.4 Gate Bias Current P IN = +10 dBm, IDD = 1050 mA Typ. mA — 5 20 Thermal Resistance 25°C Heat Sink °C/W — 5.6 — Second Harmonic P IN = +10 dBm, IDD = 1050 mA Typ. dBc — -35 — Third Harmonic P IN = +10 dBm, IDD = 1050 mA Typ. dBc — -45 — VDET V 2 — — 4. Nominal bias is obtained by fi rst connecting -2.4 volts to pin 5 (VGG), followed by connection +9 volts to pin 10 (VDD). Note sequence. Adjust VGG for a drain current of 1050 mA typical. 5. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 6. No DC bias voltage appears at the RF ports. 7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of the VDD leads. 8. Resistor and capacitors surrounding the amplifier are suggestions and not included as part of the AM42-0040.

GaAs MMIC VSAT Power Amplifier 2.0 W 5.9 - 6.4 GHz Rev. V5 AM42-0040 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Input and Output Return Loss vs. Frequency Output Power vs. Input Power @ 6.15 GHz PAE vs. Input Power @ 6.15 GHz Typical Performance Curves @ +25°C Output Power vs. Frequency @ PIN = +10 dBm PAE vs. Frequency @ PIN = +10 dBm Linear Gain vs. Frequency -40 -30 -20 -10 Frequency (GHz) Frequency (GHz) -35 -30 -25 -20 -15 -10 S11 S22 Frequency (GHz) Frequency (GHz) 02468 1 0 1 2 1 4 PIN (dBm) 02468 1 0 1 2 1 4 PIN (dBm)

GaAs MMIC VSAT Power Amplifier 2.0 W 5.9 - 6.4 GHz Rev. V5 AM42-0040 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Lead-Free CR-15† Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. † Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements.