AM42-0039 MACOM | Alldatasheet

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Technical content

GaAs MMIC VSAT Power Amplifier, 2W, 6.40-7.025 GHz AM42-0039 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. V2.00

Ordering Information

AM42-0039 Ceramic Bolt Down Packa ge Electrical Specifications: TA = +25°C, VDD = +9V, VGG adjusted for IDD = 1050 mA, Freq. = 6.40 to 7.025 GHz Parameter Abbv. Test Conditions Units Min. Typ. Max. Linear Gain G L PIN ≤ -10 dBm dB 27 30 — Input VSWR VSWR IN PIN ≤ -10 dBm — — 2.3:1 2.7:1 Output VSWR VSWR OUT PIN ≤ -10 dBm — — 2.3:1 — Output Power P SAT PIN = +10 dBm, IDD =1050 mA Typ. dBm 31.5 33.0 34.0 Output Power vs. Frequency P SAT PIN = +10 dBm, IDD =1050 mA Typ. dB — 1.0 1.5 Output Power vs. Temperature (with respect to TA=+25°C) PSAT PIN = +10 dBm, IDD =1050 mA Typ. TA= -40°C to +70°C dB — ±0.4 — Drain Bias Current I DD PIN = +10 dBm mA 900 1050 1100 Gate Bias VoltageV GG PIN = +10 dBm, IDD =1050 mA Typ. V -2.4 -1.2 -0.4 Gate Bias Current ΙGG PIN = +10 dBm, IDD =1050 mA Typ. mA — 20 40 Thermal Resistance θJC 25°C Heat Sink °C/W — 7 (Est.) — Second Harmonic f 2 PIN = +10 dBm, IDD =1050 mA Typ. dBc — -35 — Third Harmonic f 3 PIN = +10 dBm, IDD =1050 mA Typ. dBc — -45 — CR-15Features

  • High Linear Gain: 30 dB Typ.
  • High Saturated Output Power: +33 dBm Typ.
  • High Power Added Efficiency: 22% Typ.
  • 50Ω Input/Output Broadband Matched
  • High Performance Ceramic Bolt Down Package

Description

M/A-COM’s AM42-0039 is a three-stage MMIC power amplifier in a ceramic bolt down style hermetic package. The AM42-0039 employs a fully matched monolithic chip with internally decoupled Gate and Drain bias networks. The AM42-0039 is designed to be operated from a constant current Drain supply. By varying the Gate bias voltage, the saturated output power performance of this device can be tailored for various applications. The AM42-0039 is designed for use as an output stage or driver amplifier for VSAT transmitter systems. This amplifier is monolithic and requires a minimum of external components. M/A-COM’s AM42-0039 is fabricated using a mature 0.5 micron GaAs MESFET process. The chip is fully passivated for increased performance and reliability. These amplifiers are 100% RF tested to ensure compliance to performance specifications. GaAs MMIC VSAT Power Amplifier, 2W 6.40 - 7.025 GHz AM42-0039 Notes: (unless otherwise specified) 1. Dimensions are in inches. 2. Tolerance: .XXX = ± 0.005 .XX = ± 0.010

GaAs MMIC VSAT Power Amplifier, 2W, 6.40-7.025 GHz AM42-0039 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. V2.00 Typical Bias Configuration 4,5,6,7 Absolute Maximum Ratings 1,2,3,4 Parameter Absolute Maximum Input Power +23 dBm VDD +12 Volts V GG -3 Volts VDD - VGG 12 Volts IDD 1700 mA Channel Temperature -40°C to +85°C Stora ge Temperature -65°C to +150°C 1. Exceeding any one or a combination of these limits may cause permanent damage. 2. Case Temperature (TC ) = +25°C. 3. Nominal bias is obtained by first connecting -2 volts to pin 5 (VGG ), followed by connecting +9 volts to pin 10 (VDD ). Note sequence. Adjust VGG for a drain current of 1050 mA typical. 4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 5. No dc supply voltage will appear at the RF ports. 6. The dc resistance at the input and output ports is a short circuit. No voltage is allowed on these ports. 7. For optimum IP 3 performance, the VDD bypass capacitors should be placed within 0.5 inches of the VDD leads. Pin No. Pin Name Description

1 N/C No Connection

2 GND DC and RF Ground

3 RF In RF Input

4 GND DC and RF Ground

6 N/C No Connection

7 GND DC and RF Ground

8 RF Out RF Output

9 GND DC and RF Ground

µ F3.3 µ F0.01 µ F1.0 RF IN RF OUT VDD VGGGND 2,4,7,9 5

GaAs MMIC VSAT Power Amplifier, 2W, 6.40-7.025 GHz AM42-0039 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. V2.00 Typical Performance @ +25°C -40 -30 -20 -10 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Frequency (GHz) Linear Gain (dB) -40 -35 -30 -25 -20 -15 -10 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Frequency (GHz) Magnitude (dB) S22 S11 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2 7.4 7.6 7.8 8.0 Frequency (GHz) POUT (dBm) Output Power vs Frequency @ P IN = +10 dBm 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2 7.4 7.6 7.8 8.0 Frequency (GHz) PAE (%) Power Added Efficiency (PAE) vs. Frequency @ PIN = +10 dBm 0123456789 1 0 1 1 1 2 1 3 1 4 P IN (dBm) POUT (dBm) Output Power vs. Input Power @ 6.7 GHz 0123456789 1 0 1 1 1 2 1 3 1 4 PIN (dBm ) PAE (%) Power Added Efficiency vs. Input Power @ 6.7 GHz Linear Gain vs. Frequency Input and Output Return Loss vs. Frequency

GaAs MMIC VSAT Power Amplifier, 2W, 6.40-7.025 GHz AM42-0039 M/A-COM Division of AMP Incorporated ■ North America: Tel. (800) 366-2266, Fax (800) 618-8883 ■ Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 ■ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. V2.00