AM42-0039 MA-COM | Alldatasheet

Document overview

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Technical content

Features

  • High Linear Gain: 33 dB Typical
  • High Saturated Output Power: +33 dBm Typ.
  • High Power Added Efficiency: 25% Typ.
  • 50 Ω Input / Output Broadband Matched
  • Integrated Output Power Detector
  • Lead-Free Bolt Down Ceramic Package
  • RoHS* Compliant and 260°C Reflow Compatible

Description

The AM42-0039 is a three stage MMIC power amplifier in a lead-free, bolt down ceramic package, allowing easy assembly. This device employs a fully matched chip with internally decoupled gate and drain bias networks. The device is designed to operate from a constant current drain supply or a constant voltage gate supply. By varying the bias conditions, the saturated output power performance of this device may be tailored for various applications. The AM42-0039 is ideally suited for use as an output stage or a driver amplifier in VSAT systems. The AM42-0039 includes internal supply line bypassing in the package, minimizing the number of external components required. The AM42-0039 is fabricated using a mature 0.5 micron MBE based GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications. Part Number Package AM42-0039 CR-15 Ceramic Bolt Down Package Pin Configuration Pin No. Pin Name Description

1 V DD Drain Supply

2 GND DC and RF Ground

3 RF IN RF Input

4 GND DC and RF Ground

6 V GG Gate Supply

7 V DET Output Power Detector

8 RF OUT RF Output

9 GND DC and RF Ground

10 V DD Drain Supply

Flange GND DC and RF Ground Functional Schematic VDD GND RFOUT VDET VGGVGG GND RFIN GND VDD VDD GND RFOUT VDET VGGVGG GND RFIN GND VDD

2 Watt C-Band VSAT Power Amplifier

5.9 - 7.1 GHz Rev. V5 AM42-0039 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Electrical Specifications: TA =+25°C, VDD = +8 V, VGG adjusted for IDD = 900 mA, F = 5.9 - 7.1 Parameter Test Conditions Units Min. Typ. Max. Linear Gain P IN = -10 dBm dB 31 33 35 Input VSWR P IN = -10 dBm Ratio — 2.5:1 3.0:1 Output VSWR P IN = -10 dBm Ratio — 2.5:1 — Output Power P IN = +3 dBm, Ids = 900 mA Typ. dBm 31.7 33.0 — Output Power vs. Frequency PIN = +3 dBm, Ids = 900 mA Typ. (5.9 to 6.4 GHz) PIN = +3 dBm, Ids = 900 mA Typ. (6.4 to 7.1 GHz) dB dB ±0.3 ±0.3 ±0.75 ±0.75 Output Power vs. Temperature T A = -40°C to +85°C, PIN = +7 dBm dB — ±0.4 — Drain Bias Current P IN = +3 dBm mA 800 900 1000 Gate Bias Voltage P IN = +3 dBm, Ids = 900 mA Typ. V -2.0 -1.2 -0.4 Gate Bias Current P IN = +3 dBm, Ids = 900 mA Typ. mA — 10 20 Thermal Resistance (qJC) 25°C Heat Sink °C/W — 7.0 — Second Harmonic P IN = +3 dBm, Ids = 900 mA Typ. dBc — -35 — Third Harmonic P IN = +3 dBm, Ids = 900 mA Typ. dBc — -45 — Detector Voltage P IN = +3 dBm, Ids = 900 mA Typ. V — 4.0 — Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Operating the AM42-0039 The AM42-0039 is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply -2.0 Volts to V GG. 2. Ramp V DD to +8V. 3. Adjust V GG to set quiescent drain current . 4. Apply RF. 5. Power down in reverse sequence. Turn gate voltage off last. Parameter Absolute Maximum Input Power +15 dBm Operating Voltages VDD = +10 volts; VGG = -3 volts; VDD - VGG = 12 volts Ids 1200 mA Channel Temperature +150 °C Operating Temperature -40 °C to +80 °C Storage Temperature -65 °C to +150 °C Absolute Maximum Ratings1,2,3 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM does not recommend sustained operation near these survivability limits. 3. Adequate heat sinking and grounding required on flange base.

5.9 - 7.1 GHz Rev. V5 AM42-0039 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Lead-Free CR-15† † Reference Application Note M538 for lead-free solder reflow recommendations. Application Schematic 4,5,6 4. Apply -2 volts to pin 5 or 6 (V GG), prior to applying +8 volts to pins 1 or 10 (VDD). Adjust VGG for typical drain current. 5. External DC blocking capac itors required on the RF ports. 6. For optimum IP3 performance, V DD bypass capacitors should be placed within 0.5 inches of the VDD leads. RF Out RF In 1.0 µF VGG 5 or 6 GND 2,4,9 100 pF 100 pF VDD 1 or 10 1.0 µF 0.01 µF AM42-0039 VDET