AM42-0007_1 MACOM | Alldatasheet

Document overview

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Technical content

Features

  • High Linear Gain: 22 dB Typical
  • High Saturated Output Power: +33 dBm Typical
  • High Power Added Efficiency: 22% Typical
  • High P1dB: 32 dBm Typ.
  • 50 Ω Input/Output Broadband Matched
  • Integrated Output Power Detector
  • Lead-Free Ceramic Bolt Down Package
  • RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM’s AM42-0007 is a three-stage MMIC linear power amplifier in a lead-free, ceramic bolt down style hermetic package. The AM42-0007 employs a fully matched chip with internally decoupled gate and drain bias networks and an output power detector. The AM42-0007 is designed to be operated from a constant voltage drain supply. The AM42-0007 is designed for use as an output stage or a driver, in applications for VSAT systems. This design is fully mono lithic and requires a minimum of external components. M/A-COM’s AM42-0007 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications.

Ordering Information

AM42-0007 Ceramic Bolt Down Package Pin Configuration * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. Pin No. Pin Name Description

1 GND DC and RF Ground

2 GND DC and RF Ground

3 IN RF Input

4 VGG Gate Supply

5 GND DC and RF Ground

6 VDD Voltage Drain Supply

7 VDET Output Power Detector

8 OUT RF Output

9 GND DC and RF Ground

10 GND DC and RF Ground

GaAs MMIC VSAT Power Amplifier, 2.0 W 14.0 - 14.5 GHz AM42-0007 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Typical Bias Configuration5,6,7,8,9 Absolute Maximum Ratings 2,3,4 Parameter Absolute Maximum VDD 12 Volts VGG -10 Volts Power Dissipation 13.2 W RF Input Power +23 dBm Channel Temperature 150°C Storage Temperature -65°C to +150°C IDS 2100 mA 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. M/A-COM does not recommend sustained operation near these survivability limits. 4. Case Temperature (T C) = +25°C. Electrical Specifications: TA = +25°C, VDD = +9 V, VGG =- 5.0 V, Z0 = 50Ω, F = 14.0-14.5 GHz Parameter Test Conditions Units Min. Typ. Max. Linear Gain PIN < 0 dBm dB 19 22 — Input VSWR PIN < 0 dBm Ratio — 2.5:1 2.7:1 Output VSWR PIN < 0 dBm Ratio — 2.7:1 — Saturated Output Power PIN = +14 dBm dBm — 33 — Output Power at P1dB — dBm 31 32 — Output IP31 dBm — 41 — Power Added Efficiency PIN = +14 dBm % — 22 — Bias Current PIN = +14 dBm mA — 18 25 Thermal Resistance 25°C Heat Sink °C/W — 9.5 — Detector Output Voltage RL = 10 K Ω, POUT = +31dBm V — +3.5 — Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 1. IP 3 is measured with two +24 dBm output tones @ 1 MHz spacing 5. Nominal bias is obtained by first connecting –5 volts to pin 4 (VGG), followed by connection +9 volts to pin 6 (VDD). Note sequence. 6. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 7. No DC bias voltage appears at the RF ports. 8. For optimum IP3 performance, the V DD bypass capacitors should be placed within 0.5 inches of pin 6. 9. Resistor and capacitors surrounding the amplifier are suggestions and not included as part of the AM42-0007. VDD 3.3 µF RF Out RF In 0.01 µF VGG GND 1,2,5,9,10 0.01 µF AM42-0007 VDET

10 K Ω

GaAs MMIC VSAT Power Amplifier, 2.0 W 14.0 - 14.5 GHz AM42-0007 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Input and Output Return Loss vs. Frequency Detector Voltage vs. Output Power @ 14.25 GHz Typical Performance Curves @ +25°C PAE vs. Frequency @ PIN = +14 dBm Linear Gain vs. Frequency -15 10 12 14 16 18 Frequency (GHz) -15 10 12 14 16 18 S11 S22 Frequency (GHz) Output Power vs. Frequency @ PIN = +14 dBm 12 13 14 15 16 Frequency (GHz) Output Power vs. Input Power @ 14.25 GHz 0 4 8 12 16 Output Power (dBm) PAE (%) Input Power (dBm) 19 21 23 25 27 29 31 33 Output Power (dBm) 12 13 14 15 16 Frequency (GHz)

GaAs MMIC VSAT Power Amplifier, 2.0 W 14.0 - 14.5 GHz AM42-0007 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Lead-Free CR-15† † Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements.