AM42-0007 MACOM | Alldatasheet

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/onesansinv North America: Tel. (800) 366-2266, Fax (800) 618-8883 /onesansinv Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 /onesansinv Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Specifications subject to change without notice. Visit www.macom.com for additional data sheets and product information. V 4.0

Ordering Information

AM42-0007 Ceramic Bolt Down Package Electrical Specifications: TC = +25°C, VDD = +9V, VGG = -5.0V, Z0 = 50Ω,Ω,Ω,Ω,====Frequency = 14.0-14.5 GHz Parameter Abbv. Test Conditions Units Min. Typ. Max. Linear Gain G L PIN ≤ 0 dBm dB 19 22 — Input VSWR VSWRIN PIN ≤ 0 dBm — — 2.5:1 2.7:1 Output VSWR VSWROU T PIN ≤ 0 dBm — — 2.7:1 — Saturated Output Power P SAT PIN = +14 dBm dBm — 33 — Output Power @ P1dB — dBm 31 32 — Output IP3 IP3 (Refer to Note 1) dBm — 41 — Power Added Efficiency PAE PIN = +14 dBm % — 22 — Bias Currents I GG PIN = +14 dBm mA 18 25 Thermal Resistance θJC 25°C Heat Sink °C/W — 9.5 — Detector Output Voltage V det RL=10KΩ , POUT =+31dBm V — +3.5 — CR-15 Features

  • High Linear Gain: 22 dB Typ.
  • High Saturated Output Power: +33 dBm Typ.
  • High Power Added Efficiency: 22% Typ.
  • High P1dB: 32 dBm Typ.
  • 50Ω =Input/Output Broadband Matched
  • Integrated Output Power Detector
  • High Performance Ceramic Bolt Down Package

Description

M/A-COM’s AM42-0007 is a three-stage MMIC linear power amplifier in a ceramic bolt down style hermetic package. The AM42-0007 employs a fully matched chip with internally decoupled Gate and Drain bias networks and an ouput power detector. The AM42-0007 is designed to be operated from a constant voltage Drain supply. The AM42-0007 is designed for use as an output stage or a driver, in applications for VSAT systems. This design is fully monolithic and requires a minimum of external components. M/A-COM’s AM42-0007 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications. Notes: (unless otherwise specified) 1. Dimensions are in inches. 2. Tolerance: .XXX = ± 0.005 .XX = ± 0.010 IP 3 is measured with two +24 dBm output tones @ 1 MHz spacing. AM42-0007 GaAs MMIC VSAT Power Amplifier 2.0W 14.0 - 14.5 GHz CERAMIC BASE PLATE 4X .06 X 45° CHAMFER 5 4 3 2 1 7 8 9 10 .010 SQ. ORIENTATION TAB 2X o .096 THRU o.004 M A B C .090 MAX .33 .005 ± .002 .030 .318 ± .010 .328 ± .010 .050 MIN. 10 X .530 .70 .159 .010 ± .003 10 X .040 .100 4X .115 ± .010 .050 4X .085 - C - - B - - A -

/onesansinv North America: Tel. (800) 366-2266, Fax (800) 618-8883 /onesansinv Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 /onesansinv Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Specifications subject to change without notice. Visit www.macom.com for additional data sheets and product information. V 4.0 Typical Bias Configuration3,4,7 Absolute Maximum Ratings1,2,3,4 Parameter Absolute Maximum VDD 12 Volts VGG -10 Volts Power Dissipation 13.2 W RF Input Power +23 dBm Channel Temperature 150°C Storage Temperature -65°C to +150°C I ds 2100 mA 1. Operation of this device outside any of these limits may cause permanent damage. 2. Case Temperature (T C) = +25°C. 3. Nominal bias is obtained by first connecting -5 volts to pin 4 (VGG), followed by connection +9 volts to pin 6 (VDD). Note sequence. 4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 5. No dc bias voltage appears at the RF ports. 6. The dc resistance at the input port is an open circuit and at the ouput port is a short circuit. 7. For optimum IP 3 performance, the VDD bypass capacitors should be placed within 0.5 inches of pin 6. V det µ F µ F AM42-0007 µ F 3.3 0.01 0.01

10 K Ω

1,2,5,9,10 4 Pin No. Pin Name Description

1 GND DC and RF Ground

2 GND DC and RF Ground

3 IN RF Input

4 VGG Gate Supply

5 GND DC and RF Ground

6 VDD Voltage Drain Supply

7 Vdet Output Power Detector

8 OUT RF Output

9 GND DC and RF Ground

10 GND DC and RF Ground

GaAs MMIC VSAT Power Amplifier 2.0W, 14.0 - 14.5 GHz AM42-0007

/onesansinv North America: Tel. (800) 366-2266, Fax (800) 618-8883 /onesansinv Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 /onesansinv Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Specifications subject to change without notice. Visit www.macom.com for additional data sheets and product information. V 4.0 -15 10 12 14 16 18 -15 10 12 14 16 18 Linear Gain (dB) Frequency (GHz) Linear Gain vs. Frequency Input and Output Return Loss vs. Frequency Frequency (GHz) Magnitude (dB) S11 S22 4 8 12 16 19 21 23 25 27 29 31 33 Output Power vs. Input Power @ 14.25 GHz Detector Voltage vs. Output Power @ 14.25 GHz PIN (dBm) POUT (dBm) VDET (V) POUT (dBm) 12 13 14 15 16 12 13 14 15 16 Frequency (GHz) POUT (dBm) Frequency (GHz) PAE (%) Output Power vs. Frequency @ PIN = +14 dBm Power Added Efficiency vs. Frequency @ PIN = +14 dBm Typical Performance @ +25°C Test Conditions are listed in the section “Electrical Specifications”. POUT PAE GaAs MMIC VSAT Power Amplifier 2.0W, 14.0 - 14.5 GHz AM42-0007