AM42-0007-DIE MACOM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
GaAs MMIC Power Amplifier, 2 W, 14.0 - 14.5 GHz AM42-0007-DIE M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. Functional Schematic Features
- High Linear Gain: 22 dB Typical.
- High Saturated Output Power: +33 dBm Typical
- High Power Added Efficiency: 22% Typical
- High P1dB: +32 dBm Typical
- 50 Ω Input / Output Broadband Matched
- Integrated Output Power Detector
- High Performance Ceramic Bolt Down Package
Description
M/A-COM’s AM42-0007-DIE is a three stage MMIC linear power amplifier fabricated on a mature 0.5 micron MBE based GaAs process. The AM42-0007- DIE employs a fully matched chip with integral bias networks and output power detector. This GaAs MMIC power amplifier is ideally suited for used as an output stage or driver in applications for VSAT applications.
Ordering Information
Absolute Maximum Ratings 1,2 Parameter Absolute Maximum VDD +12 Volts VGG -10 Volts Power Dissipation 17.9 W RF Input Power +23 dBm ChannelTemperature +150 °C Storage Temperature -65 °C to +150 °C 1. Exceeding any one or combinati on of these limits may cause permanent damage to this device. 2. Back of die temperature (T B) = +25°C. Typical Bias Configuration 3,4 3. Nominal bias is obtained by fi rst connecting –5 volts to pin VGG (resistor network used) followed by connecting +9 volts to pin V DD. Note sequence. 4. It is recommended that the die be mounted with Au/Sn eutectic performs for good RF ground and thermal interface.
GaAs MMIC Power Amplifier, 2 W, 14.0 - 14.5 GHz AM42-0007-DIE M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. Typical Performance @ 25°C Electrical Specifications 5: TB = +25°C , VDD = +9 V, VGG = -1.2V, Z0 = 50Ω Parameter Test Conditions Units Min. Typ. Max. Linear Gain PIN < 0 dBm dB — 22 — Input VSWR — Ratio — 2.5:1 — Output VSWR — Ratio — 2.7:1 — Saturated Output Power PIN < +14 dBm dBm — +33 — Output Power @ 1dB Compression dBm 31 +32 — Output IP3 dBm — 41 — Power Added Efficiency (PAE) PIN < +14 dBm % — 22 — Bias Current IDSQ (No RF) IGG (No RF) mA mA 850 0.1 Thermal Resistance θ CB26 °C/W — 7 — Detector Output Voltage (VDET) Pin = +3 dBm, Ids = 750 mA Typ. V — +3.5 — 5. 100% on wafer tested (50 µs pulse width, 20% duty factor) without resistor network on gates. 6. Channel to die backside.