AM42-0007-DIE MA-COM | Alldatasheet
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Technical content
GaAs MMIC Power Amplifier, 2.0 W 14.0 - 14.5 GHz Rev. V6 AM42-0007-DIE Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Functional Schematic Features
- High Linear Gain: 22 dB Typical.
- High Saturated Output Power: +33 dBm Typical
- High Power Added Efficiency: 22% Typical
- High P1dB: +32 dBm Typical
- 50 Ω Input / Output Broadband Matched
- Integrated Output Power Detector
- High Performance Ceramic Bolt Down Package
Description
The AM42-0007-DIE is a three stage MMIC linear power amplifier fabricated on a mature 0.5 micron MBE based GaAs process. The AM42-0007-DIE employs a fully matched chip with integral bias networks and output power detector. This GaAs MMIC power amplifier is ideally suited for used as an output stage or driver in applications for VSAT applications.
Ordering Information
Absolute Maximum Ratings 1,2 Parameter Absolute Maximum VDD +12 Volts VGG -10 Volts Power Dissipation 17.9 W RF Input Power +23 dBm ChannelTemperature +150 °C Storage Temperature -65 °C to +150 °C 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. Back of die temperature (T B) = +25°C. Typical Bias Configuration 3,4 3. Nominal bias is obtained by first connecting –5 volts to pin VGG (resistor network used) followed by connecting +9 volts to pin VDD. Note sequence. 4. It is recommended that the die be mounted with Au/Sn eutectic performs for good RF ground and thermal interface.
GaAs MMIC Power Amplifier, 2.0 W 14.0 - 14.5 GHz Rev. V6 AM42-0007-DIE Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Parameter Test Conditions Units Min. Typ. Max. Linear Gain P IN < 0 dBm dB — 22 — Input VSWR — Ratio — 2.5:1 — Output VSWR — Ratio — 2.7:1 — Saturated Output Power P IN < +14 dBm dBm — +33 — Output Power @ 1 dB Compression — dBm 31 +32 — Output IP3 — dBm — 41 — Power Added Efficiency (PAE) P IN < +14 dBm % — 22 — Bias Current IDSQ (No RF) IGG (No RF) mA mA — 850 0.1 — Thermal Resistance θ CB26 °C/W — 7 — Detector Output Voltage (VDET) Pin = +3 dBm, Ids = 750 mA Typ. V — +3.5 — Electrical Specifications 5: TB = +25°C , VDD = +9 V, VGG = -1.2V, Z0 = 50 Ω 5. 100% on wafer tested (50 µs pulse width, 20% duty factor) without resistor network on gates. 6. Channel to die backside. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices.
GaAs MMIC Power Amplifier, 2.0 W 14.0 - 14.5 GHz Rev. V6 AM42-0007-DIE Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Typical Performance @ 25°C -10 12 13 14 15 16 17 Frequency (GHz) Linear Gain vs. Frequency Input & Output Return Loss vs. Frequency -20 -15 -10 12 13 14 15 16 17 S11 S22 Frequency (GHz) Output Power vs. Input Power @ 14 GHz 4 6 8 10 12 14 Input Power (dBm) Power Added Efficiency vs. Input Power @ 14 GHz 4 6 8 10 12 14 P IN (dBm) Output Power vs. Frequency @ PIN = +14 dBm Frequency (GHz) Frequency (GHz) PAE vs. Frequency @ PIN = +14 dBm