AM42-0002 MACOM | Alldatasheet

Document overview

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Technical content

Features

  • High Linear Gain: 22 dB Typical
  • High Saturated Output Power: +31.5 dBm Typical
  • High Power Added Efficiency: 22% Typical
  • 50 Ω Input/Output Broadband Matched
  • Integrated Output Power Detector
  • Lead-Free Ceramic Bolt Down Package
  • RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM’s AM42-0002 is a three-stage MMIC linear power amplifier in a lead-free, ceramic bolt down style hermetic package. The AM42-0002 employs a fully matched chip with internally decoupled gate and drain bias networks and an output power detector. The AM42-0002 is designed to be operated from a constant voltage drain supply. The AM42-0002 is designed for use as an output stage or a driver, in applications for VSAT systems. This design is fully mono lithic and requires a minimum of external components. M/A-COM’s AM42-0002 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications.

Ordering Information

AM42-0002 Ceramic Bolt Down Package Pin Configuration * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. Pin No. Pin Name Description

1 GND DC and RF Ground

2 GND DC and RF Ground

3 RFIN RF Input

4 VGG Gate Supply

5 GND DC and RF Ground

6 VDD Voltage Drain Supply

7 VDET Output Power Detector

8 RFOUT RF Output

9 GND DC and RF Ground

10 GND DC and RF Ground

GaAs MMIC VSAT Power Amplifier 1.4 W 14.0 - 14.5 GHz AM42-0002 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Application Schematic 4,5,8,9 Absolute Maximum Ratings 1,2,3 Parameter Absolute Maximum VDD 12 Volts VGG -10 Volts RF Input Power +23 dBm Channel Temperature 150°C Storage Temperature -65°C to +150°C 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM does not recommend sustained operation near these survivability limits. 3. Case Temperature (T C) = +25°C. Electrical Specifications: TA = 25°C, VDD = +9 V, VGG = -5.0 V, Z0 = 50 Ω Parameter Test Conditions Units Min. Typ. Max. Linear Gain PIN < 0 dBm dB 19 22 — Input VSWR PIN < 0 dBm Ratio — 2.5:1 2.7:1 Output VSWR PIN < 0 dBm Ratio — 2.7:1 — Saturated Output Power PIN = +14 dBm dBm 30.5 31.5 — Output Power at P1dB — dBm — 29.5 — Output IP3 Two +24 dBm output tones @ 1 MHz spacing dBm — 39 — Power Added Efficiency PIN = +14 dBm % — 22 — Bias Current PIN = +14 dBm mA — 800 1400 Thermal Resistance 25°C Heat Sink °C/W — 10 — Detector Output Voltage RL = 10 K Ω, POUT = +31 dBm V — +3.5 — Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 4. Nominal bias is obtained by first connecting –5 volts to pin 4 (VGG), followed by connection +9 volts to pin 6 (VDD). Note sequence. 5. RF ground and thermal interface is the flange (case bot- tom). Adequate heat sinking is required. 6. No DC bias voltage appears at the RF ports. 7. The DC resistance at the i nput port is an open circuit and at the output port is a short circuit. 8. For optimum IP3 performance, the V DD bypass capacitors should be placed within 0.5 inches of pin 6. 9. Resistor and capacitors surrounding the amplifier are suggestions and not included as part of the AM42-0002.

GaAs MMIC VSAT Power Amplifier 1.4 W 14.0 - 14.5 GHz AM42-0002 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Input and Output Return Loss vs. Frequency Output Power & PAE vs. Input Power @ 14.25 GHz Detector Voltage vs. Output Power @ 14.25 GHz Typical Performance Curves @ +25°C Output Power vs. Frequency @ PIN = +14 dBm PAE vs. Frequency @ P IN = +14 dBm Linear Gain vs. Frequency 12 13 14 15 16 Frequency (GHz) 12 13 14 15 16 Frequency (GHz) 048 1 2 1 6 Output Power (dBm) PAE (%) Input Power (dBm) 20 22 25 27 30 32 Output Power (dBm) -20 -15 -10 10 12 14 16 18 S11 S22 Frequency (GHz) -15 10 12 14 16 18 Frequency (GHz)

GaAs MMIC VSAT Power Amplifier 1.4 W 14.0 - 14.5 GHz AM42-0002 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Lead-Free CR-15† † Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements.