AM42-0002

AM42-0002 MA-COM | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

• High Linear Gain: 22 dB Typical
• High Saturated Output Power: +31.5 dBm Typical
• High Power Added Efficiency: 22% Typical
• 50 Ω Input/Output Broadband Matched
• Integrated Output Power Detector
• Lead-Free Ceramic Bolt Down Package
• RoHS* Compliant and 260°C Reflow Compatible

Description

The AM42-0002 is a three-stage MMIC linear power amplifier in a lead-free, ceramic bolt down style hermetic package. The AM42-0002 employs a fully matched chip with internally decoupled gate and drain bias networks and an output power detector. The AM42-0002 is designed to be operated from a constant voltage drain supply. The AM42-0002 is designed for use as an output stage or a driver, in applications for VSAT systems. This design is fully mono lithic and requires a minimum of external components. The AM42-0002 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications.

Ordering Information

AM42-0002 Ceramic Bolt Down Pin Configuration * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. Pin No. Pin Name Description

1 GND DC and RF Ground

2 GND DC and RF Ground

3 RF IN RF Input

4 V GG Gate Supply

5 GND DC and RF Ground

6 V DD Voltage Drain Supply

7 V DET Output Power Detector

8 RF OUT RF Output

9 GND DC and RF Ground

10 GND DC and RF Ground

GaAs MMIC VSAT Power Amplifier, 1.4 W 14.0 - 14.5 GHz Rev. V6 AM42-0002 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Absolute Maximum Ratings 1,2,3 Parameter Absolute Maximum VDD 12 Volts VGG -10 Volts Power Dissipation 13.2 W RF Input Power +23 dBm Channel Temperature 150°C Storage Temperature -65°C to +150°C 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM Technology does not recommend sustained operation near these survivability limits. 3. Case Temperature (T C) = +25°C. Electrical Specifications: TA = +25°C, VDD = +9 V, VGG =- 5.0 V, Z0 = 50Ω Parameter Test Conditions Units Min. Typ. Max. Linear Gain P IN < 0 dBm dB 19 22 — Input VSWR P IN < 0 dBm Ratio — 2.5:1 2.7:1 Output VSWR P IN < 0 dBm Ratio — 2.7:1 — Saturated Output Power P IN = +14 dBm dBm 30.5 31.5 — Output Power at P1dB — dBm 31 29.5 — Output IP3 Two +24 dB, output tones @ 1 MHz spacing dBm — 39 — Power Added Efficiency P IN = +14 dBm % — 22 — Bias Current P IN = +14 dBm mA — 800 1400 Thermal Resistance 25°C Heat Sink °C/W — 9.5 — Detector Output Voltage R L = 10 K Ω, POUT = +31dBm V — +3.5 — Typical Bias Configuration4,5,6,7,8,9 4. Nominal bias is obtained by first connecting –5 volts to pin 4 (VGG), followed by connection +9 volts to pin 6 (VDD). Note sequence. 5. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 6. No DC bias voltage appears at the RF ports. 7. The DC resistance at the input port is an open circuit and at the output port is a short circuit. 8. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of pin 6. 9. Resistor and capacitors surrounding the amplifier are suggestions and not included as part of the AM42-0002.

GaAs MMIC VSAT Power Amplifier, 1.4 W 14.0 - 14.5 GHz Rev. V6 AM42-0002 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Input and Output Return Loss vs. Frequency Output Power & PAE vs. Input Power @ 14.25 GHz Detector Voltage vs. Output Power @ 14.25 GHz Typical Performance Curves @ +25°C Output Power vs. Frequency @ PIN = +14 dBm PAE vs. Frequency @ PIN = +14 dBm Linear Gain vs. Frequency 12 13 14 15 16 Frequency (GHz) 12 13 14 15 16 Frequency (GHz) 048 1 2 1 6 Output Power (dBm) PAE (%) Input Power (dBm) 20 22 25 27 30 32 Output Power (dBm) -20 -15 -10 10 12 14 16 18 S11 S22 Frequency (GHz) -15 10 12 14 16 18 Frequency (GHz)

GaAs MMIC VSAT Power Amplifier, 1.4 W 14.0 - 14.5 GHz Rev. V6 AM42-0002 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Lead-Free CR-15† † Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices.