DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
AiT Semiconductor Inc. www.ait-ic.com AM4102 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2017 RELEASED - - 1 - DESCRIPTION FEATURES The AM4102 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. AM4102 is available in a TO252-2 package. VDS=30V, ID=50A RDS(ON) <11mΩ@ VGS =10V RDS(ON) <16mΩ@ VGS =5V High density cell design for ultra low RDSON Fully characterized Avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability Available in a TO252-2 package. ORDERING INFORMATION APPLICATION Package Type Part Number TO252-2 SPQ: 2,500pcs/Reel D AM4102DR AM4102DVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Power switching application Hard switched and high frequency circuits Uninterruptible Power Supply PIN DESCRIPTION Schematic diagram
AiT Semiconductor Inc. www.ait-ic.com AM4102 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2017 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 D Drain
3 S Source
AiT Semiconductor Inc. www.ait-ic.com AM4102 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2017 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TC= 25℃, unless otherwise noted VDS, Drain-Source Voltage 30V VGS, Gate-Source Voltage ±20V ID, Drain Current-Continuous 50A ID(100℃), Drain Current-Continuous TC=100°C 35A IDM, Pulsed Drain Current 140A PD, Maximum Power Dissipation 60W Derating Factor 0.4 W/℃ EAS, Single pulse avalanche energy NOTE1 70mJ TJ, TSTG, Operating Junction and Storage Temperature Range -55℃~175℃ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTIC Parameter Symbol Value Units Thermal Resistance , Junction-to-CaseNOTE2 RθJC 2.5 ℃/W
AiT Semiconductor Inc. www.ait-ic.com AM4102 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2017 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TC = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250μA 30 33 - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA On CharacteristicsNOTE3 Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 1.6 3 V Drain-Source On-state Resistance RDS(ON) VGS=10V,ID=25A - 8 11 mΩ VGS=5V,ID=20A - 10 16 Forward Transconductance gFS VDS=5V,ID=20A 15 - - S Dynamic Characteristics NOTE4 Input Capacitance Ciss VDS=15V,VGS=0V, f=1.0MHz - 2000 - pF Output Capacitance Coss - 280 - Reverse Transfer Capacitance Crss - 160 - Switching CharacteristicsNOTE4 Turn-on Delay Time td(on) VDD=15V, ID=20A, VGS=10V, RGEN=1.8Ω - 10 - ns Turn-on Rise Time tr - 8 - Turn-off Delay Time td(off) - 30 - Turn-off Fall Time tf - 5 - Total Gate Charge Qg VDS=10V, ID=25A, VGS=10V - 23 - nC Gate-Source Charge Qgs - 7 - Gate-Drain Charge Qgd - 4.5 - Drain-Source Diode Characteristics Diode Forward VoltageNOTE3 VSD VGS=0V, IS=25A - 0.85 1.2 V Diode Forward CurrentNOTE2 IS - - 40 A Reverse Recovery Time trr TJ = 25°C, IF = 40A di/dt = 100A/μsNOTE3 - 22 35 ns Reverse Recovery Charge Qrr - 12 20 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) NOTE1: EAS condition：TJ=25℃, VDD=15V,VG=10V, L=1mH, Rg=25Ω NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec. NOTE3: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. NOTE4: Guaranteed by design, not subject to production
AiT Semiconductor Inc. www.ait-ic.com AM4102 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2017 RELEASED - - 5 - TEST CIRCUIT 1. EAS Test Circuit 2. Gate Charge Test Circuit 3. Switch Time Test Circuit
AiT Semiconductor Inc. www.ait-ic.com AM4102 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2017 RELEASED - - 6 - TYPICAL CHARACTERISTICS 1. Output Characteristics 2. Rdson-Junction Temperature 3. Transfer Characteristics 4. Gate Charge 5. Rdson- Drain Current 6. Source- Drain Diode Forward
AiT Semiconductor Inc. www.ait-ic.com AM4102 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2017 RELEASED - - 7 - 7. Capacitance vs. Vds 8. BVDSS vs. Junction Temperature 9. Safe Operation Area 10. VGS(th) vs. Junction Temperature 11. Normalized Maximum Transient Thermal Impedance
AiT Semiconductor Inc. www.ait-ic.com AM4102 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2017 RELEASED - - 8 -
PACKAGE INFORMATION
Dimension in TO252-2 (Unit: mm) Symbol Millimeters Inchers Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830 REF. 0.190 REF. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 2.900 REF. 0.114 REF. L2 1.400 1.700 0.055 0.067 L3 1.600 REF. 0.063 REF. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 REF. 0.211 REF.
AiT Semiconductor Inc. www.ait-ic.com AM4102 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2017 RELEASED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted t o be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, per sonal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to cus tomer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.