AM40T120 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. AM40T120 www.ait-ic.com MOSFET 1200V , 40A, Irrm=12.3A IGBT MOSFET REV1.0 - DEC 2022 RELEASED - - 1 - DESCRIPTION FEATURES The AM40T120 is available in TO-247 Package VCES IC VCE PD 1200V 40A 2.1V 367W ⚫ Fast Switching ⚫ Low VCE(sat): 2.1V ⚫ Positive Temperature Coefficient ⚫ Very Soft, Fast Recovery Anti-Parallel Diode ⚫ Irrm: 12.3A APPLICATION PIN DESCRIPTION ⚫ UPS ⚫ Welding Converters ⚫ Converters With High Switching Frequency Pin# Symbol Function
1 G Gate
2 C Collector
3 E Emitter
ORDERING INFORMATION
SPQ:30pcs/Tube TL3F AM40T120TL3FU AM40T120TL3FVU Note V: Halogen free Package U: Tube AiT provides all RoHS products
AiT Semiconductor Inc. AM40T120 www.ait-ic.com MOSFET 1200V , 40A, Irrm=12.3A IGBT MOSFET REV1.0 - DEC 2022 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Units Collector-Emitter Voltage VCES 1200 V Collector Current @ TC = 25 °C IC 80 A Collector Current @ TC = 100 °C 40 A Pulsed Collector Current (1) @ TC = 25 °C ICM 160 A Diode Continuous Forward Current @ TC = 25 °C IF 40 A Diode Continuous Forward Current @ TC = 100 °C 20 A Diode Maximum Forward Current @ TC = 25 °C IFM 80 A Gate-Emitter Voltage VGES ±20 V Power Dissipation @ TC = 25 °C PD 367 W Storage Temperature Range Tstg -55 to 150 ℃ Junction Temperature TJ 150 ℃ Maximum Temperature for Soldering TL 260 ℃ THERMAL CHARACTERISTICS Junction-to-Case (IGBT) RθJC 0.34 ℃/W Junction-to-Case (Diode) RθJC 0.8 ℃/W Junction-to-Ambient RθJA 40 ℃/W Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (1) Pulse width limited by maximum junction temperature
AiT Semiconductor Inc. AM40T120 www.ait-ic.com MOSFET 1200V , 40A, Irrm=12.3A IGBT MOSFET REV1.0 - DEC 2022 RELEASED - - 3 -
ELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage VCES VGE=0V, IC=250μA 1200 - - V Collector-Emitter Leakage Current ICES VCE = 1200V, VGE = 0V - - 250 μA Gate-Emitter Leakage Current IGES(F) VGE = +20V - - 600 nA Gate-Emitter Reverse Leakage IGES(R) VGE = -20V - - -600 nA ON CHARACTERISTICS Collector-Emitter Saturation Voltage VCE(sat) VGE = 15V, IC=40A - 2.1 2.6 V Gate Threshold Voltage VGE(TH) VCE = VGE, IC = 1mA 5.0 5.8 6.5 V Pulse width tp≤300μs, δ≤2% DYNAMIC CHARACTERISTICS Input Capacitance Ciss VGE = 0V VCE = 25V f = 1.0MHz - 3560 - pF Output Capacitance Coss - 150 - Reverse Transfer Capacitance Crss - 90 - Total Gate Charge Qg IC = 40A VCE = 960V VGE = 15V - 245 - nC SWITCHING CHARACTERISTICS Turn-on Delay Time td(ON) IC =40A VCE = 600V VGE = 15V RG =10Ω Inductive Load - 54 - ns Rise Time tr - 100 - Turn-Off Delay Time td(OFF) - 245 - Fall Time tf - 33 - Turn-On Switching Loss Eon - 5.5 - mJ Turn-Off Switching Loss Eoff - 1.1 - Total Switching Loss Ets - 6.6 - DIODE CHARACTERISTICS Diode Forward Voltage VF IF=20A - 2 2.5 V Reverse Recovery Time Trr IF=20A, di/dt=200A/us - 60 - nS Reverse Recovery Charge Qrr - 413 - nC Reverse Recovery Current Irrm - 12.3 - A
AiT Semiconductor Inc. AM40T120 www.ait-ic.com MOSFET 1200V , 40A, Irrm=12.3A IGBT MOSFET REV1.0 - DEC 2022 RELEASED - - 4 - TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Forward Bias Safe Operating Area Fig.2 Power Dissipation vs Case Temperature Fig.3 Collector Current vs Case Temperature Fig.4 Typical Transfer Characteristics Fig.5 Typical Output Characteristics(TC=25℃) Fig.6 Typical Output Characteristics(TC=150℃)
AiT Semiconductor Inc. AM40T120 www.ait-ic.com MOSFET 1200V , 40A, Irrm=12.3A IGBT MOSFET REV1.0 - DEC 2022 RELEASED - - 5 - Fig.7 Typical Collector-Emitter Saturation Voltage vs Junction Temperature Fig.8 Typical Transfer Characteristics Fig.9 Typical Gate Charge Fig.10 Typical Capacitance vs Collector- Emitter Voltage Fig.11 IGBT Transient Thermal Impedance vs Pulse Width Fig.12 Typical Diode Forward Current vs Forward Voltage
AiT Semiconductor Inc. AM40T120 www.ait-ic.com MOSFET 1200V , 40A, Irrm=12.3A IGBT MOSFET REV1.0 - DEC 2022 RELEASED - - 6 - Fig.13 Inductive Switching Test Circuit Fig.14 Inductive Switching Waveforms Fig.15 Inductive Switching Waveforms Fig.16. Inductive Switching Waveforms
AiT Semiconductor Inc. AM40T120 www.ait-ic.com MOSFET 1200V , 40A, Irrm=12.3A IGBT MOSFET REV1.0 - DEC 2022 RELEASED - - 7 -
PACKAGE INFORMATION
Dimension in TO-247 (Unit: mm) Symbol Min. Max. Symbol Min. Max. A 4.900 5.160 D2 1.050 1.350 A1 2.270 2.530 E 15.700 16.030 A2 1.850 2.110 E1 13.100 14.150 B 1.070 1.330 E2 3.680 5.100 B1 1.900 2.410 E3 1.680 2.600 B2 1.750 2.150 e 5.440 B3 2.870 3.380 L 19.800 20.310 B4 2.870 3.130 L1 4.170 4.470 C 0.550 0.680 ΦP 3.500 3.700 D 20.820 21.100 Q 5.490 6.000 D1 16.250 17.650 S 6.040 6.300
AiT Semiconductor Inc. AM40T120 www.ait-ic.com MOSFET 1200V , 40A, Irrm=12.3A IGBT MOSFET REV1.0 - DEC 2022 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, person al injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to cust omer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.