AM4003 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM4003 MOSFET 30V N-CHANNEL ENHANCEMENT-MODE REV1.0 - SEP 2021 RELEASED - - 1 - DESCRIPTION FEATURES VDS=30V VGS=±20V ID(A)=0.56A RDS(ON), VGS@4.0V, IDS@10mA = 1Ω RDS(ON), VGS@2.5V, IDS@10mA = 1.5Ω The AM4003 is available in SOT-23S package. ⚫ Low gate voltage threshold(V GS(th))to facilitate drive circuit design ⚫ Low gate charge for fast switching ⚫ ESD protected gate ⚫ Minimum breakdown voltage rating of 30V ⚫ Available in SOT-23S package ORDERING INFORMATION APPLICATION Package Type Part Number SOT-23S SPQ: 3,000pcs/Reel E3S AM4003E3SR AM4003E3SVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products ⚫ Level shifters ⚫ Level switches ⚫ Low side load switches ⚫ Portable applications N CHANNEL MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM4003 MOSFET 30V N-CHANNEL ENHANCEMENT-MODE REV1.0 - SEP 2021 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM4003 MOSFET 30V N-CHANNEL ENHANCEMENT-MODE REV1.0 - SEP 2021 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA=25℃ VDSS, Drain–to–Source Voltage 30V VGS, Gate–to–Source Voltage – Continuous ±20V ID, Continuous Drain CurrentNOTE1 Steady State TA = 25°C 0.5A TA = 85°C 0.37A ID, Continuous Drain CurrentNOTE1t<10s TA = 25°C 0.56A TA = 85°C 0.4A IDM, Pulsed Drain Current(tp=10μs) 1.7A IS, Continuous Source Current (Body Diode) 1A PD, Maximum Power DissipationNOTE1 Steady State 0.69W t<5s 0.83W TJ, TSTG, Junction and Storage Temperature −55 ∼ +150°C TL, Maximum Temperature for Soldering Purposes 260°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Charac teristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS Parameter Symbol Limit Units Thermal Resistance, Junction–to–AmbientNOTE1 Steady State RθJA 180 °C/W t < 10s 150
AiT Semiconductor Inc. www.ait-ic.com AM4003 MOSFET 30V N-CHANNEL ENHANCEMENT-MODE REV1.0 - SEP 2021 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA=25℃ Parameter Symbol Conditions Min Typ. Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=100μA 30 - - V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS /TJ - 40 - mV/°C Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V - - 1.0 μA Gate-Body Leakage Current IGSS VDS=0V, VGS=±10V - - ±1.0 nA ON CHARACTERISTICSNOTE2 Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 0.8 - 1.6 V Negative Threshold Temperature Coefficient VGS(TH)/ TJ - 3.4 - mV/°C Static Drain–Source On–State Resistance RDS(ON) VGS=4.0V, ID=10mA - 1 1.5 Ω VGS=2.5V, ID=10mA - 1.5 2 Forward Transconductance gFS VDS=3.0V, ID=10mA - 0.33 - S DYNAMIC CHARACTERISTICS Input Capacitance Clss VGS=0V, f=1.0MHz, VDS=5V - 41 - pF Output Capacitance Coss - 12 - Reverse Transfer Capacitance Crss - 8.1 - SWITCHING CHARACTERISTICS Turn-on Delay Time td(on) VGS=4.5V, VDD=5.0V, ID=0.1A, RG=50Ω - 16.7 - ns Rise Time tr - 47.9 - Turn-Off Delay Time td(off) - 65.1 - Fall Time tf - 64.2 - SOURCE–DRAIN DIODE CHARACTERISTICS Forward Voltage VSD VGS=0V, ISD=10mA - 0.65 0.7 V Reverse Recovery Time trr VGS=0V, dIS/dt=8A/μs, IS=10mA - 14 - ns NOTE1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). NOTE2: Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2.0%.
AiT Semiconductor Inc. www.ait-ic.com AM4003 MOSFET 30V N-CHANNEL ENHANCEMENT-MODE REV1.0 - SEP 2021 RELEASED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS 1. On-Region Characteristics 2. Transfer Characteristics 3. RDS(ON) vs. VGS 4. RDS(ON) vs. ID 5. RDS(ON) vs. Temperature 6. IDSS vs. VDS
AiT Semiconductor Inc. www.ait-ic.com AM4003 MOSFET 30V N-CHANNEL ENHANCEMENT-MODE REV1.0 - SEP 2021 RELEASED - - 6 - 7. Capacitance Variation 8. Diode Forward Characteristics
AiT Semiconductor Inc. www.ait-ic.com AM4003 MOSFET 30V N-CHANNEL ENHANCEMENT-MODE REV1.0 - SEP 2021 RELEASED - - 7 -
PACKAGE INFORMATION
Dimension in SOT-23S Package (Unit: mm) DIM Millimeters Inches MIN MAX MIN MAX A 0.89 1.11 0.035 0.044 A1 0.01 0.10 0.001 0.004 b 0.37 0.50 0.015 0.02 c 0.09 0.18 0.003 0.007 D 2.80 3.04 0.11 0.12 E 1.20 1.40 0.047 0.055 e 1.78 2.04 0.07 0.081 L 0.10 0.30 0.004 0.012 L1 0.35 0.69 0.014 0.029 HE 2.10 2.64 0.083 0.104 θ 0° 10° 0° 10°
AiT Semiconductor Inc. www.ait-ic.com AM4003 MOSFET 30V N-CHANNEL ENHANCEMENT-MODE REV1.0 - SEP 2021 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifi cations, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide a dequate design an d operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.