AM3483 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM3483 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 1 - DESCRIPTION FEATURES AM3483 is available in a SOT-26 package. -30V/-7.5V, RDS(ON)= 30mΩ(max.) @ VGS= -10V RDS(ON)= 45mΩ(max.) @ VGS= -4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-26 package. ORDERING INFORMATION APPLICATION Package Type Part Number SOT-26 E6 AM3483E6R AM3483E6VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. PIN DESCRIPTION P-Channel MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM3483 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function 1,2,5,6 D Drain
3 G Gate
4 S Source
AiT Semiconductor Inc. www.ait-ic.com AM3483 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage -30V VGSS, Gate-Source Voltage ±20V ID NOTE1, Continuous Drain Current(VGS=-10V) TA=25℃ -7.5A TA=70℃ -6A IDM NOTE1, 300μs Pulsed Drain Current (VGS=-10V) -30A IS NOTE1, Diode Continuous Forward Current -2A IAS NOTE2, Avalanche Current, Single pulse (L=0.3mH) -16A EAS NOTE2, Avalanche Energy, Single pulse (L=0.3mH) 38mJ TJ, Maximum Junction Temperature 150℃ TSTG, Storage Temperature Range -55℃~150℃ PD NOTE1, Maximum Power Dissipation TA=25oC 2.5W TA=70℃ 1.6W RθJANOTE1, Thermal Resistance-Junction to Ambient t ≤ 10s 50°C/W Steady state 80°C/W Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Surface Mounted on 1in2 pad area, t ≤ 10sec NOTE2: UIS tested and pulse width limited by maximum junction temperature 150°C (initial temperature TJ=25°C).
AiT Semiconductor Inc. www.ait-ic.com AM3483 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless Otherwise Noted Parameter Symbol Conditions Min Typ. Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=-250μA -30 - - V Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - - -1 μA TJ=85°C -30 Gate Threshold Voltage VGS(th) VDS=VGS,IDS=-250μA -1.3 -1.8 -2.3 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Drain-Source On-state Resistance RDS(ON) NOTE3 VGS=-10V,IDS=-7.5A - 24 30 mΩ VGS=-4.5V,IDS=-4A - 33 45 Diode Characteristics Diode Forward Voltage VSD NOTE3 ISD=-2A,VGS=0V - -0.7 -1 V Reverse Recovery Time trr NOTE4 ISD=-7.5A, diSD/dt=100A/μs - 19 - ns Reverse Recovery Charge Qrr NOTE4 - 9 - nC Dynamic Characteristics NOTE4 Gate Resistance RG VGS=0V,VDS=0V,F=1MHz - 7 - Ω Input Capacitance CISS VGS=0V, VDS=-15V, Frequency=1.0MHz - 840 - pF Output Capacitance COSS - 150 - Reverse Transfer Capacitance CRSS - 110 - Turn-on Delay Time tD(ON) VDD=-15V, RL=15Ω IDS=-1A, VGEN=-10V, RG=6Ω - 7.5 - ns Turn-on Rise Time tR - 8 - Turn-off Delay Time tD(OFF) - 37 - Turn-off Fall Time tF - 16 - Gate Charge Characteristics NOTE4 Total Gate Charge QG VDS=-15V, VGS=-10V, IDS≡-7.5A - 18 - nC Gate-Source Charge QGS - 3 - Gate-Drain Charge QGD - 4 - NOTE3: Pulse test; pulse width≤300μs, duty cycle≤2%. NOTE4: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM3483 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM3483 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 6 - 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge
AiT Semiconductor Inc. www.ait-ic.com AM3483 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 7 - DETAILED INFORMATION Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM3483 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 8 -
PACKAGE INFORMATION
Dimension in SOT-26 Package (Unit: mm) SYMBOL MIN MAX A - 1.250 A1 0.000 0.150 A2 0.900 1.300 b 0.300 0.500 c 0.080 0.220 D 2.700 3.100 E 1.400 1.800 E1 2.600 3.000 e 0.950(BSC) e1 1.900(BSC) L 0.300 0.600 θ 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM3483 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to an y its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the c ustomer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time o f sale.