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AiT Semiconductor Inc. www.ait-ic.com AM3460 MOSFET 60V N-CHANNEL ENHANCEMENT MODE REV1.1 - JAN 2016 RELEASED, JUL 2016 UPDATED - - 1 - DESCRIPTION FEATURES The AM3460 is available in SOT-23S package.

ORDERING INFORMATION

V: Halogen free Package R: Tape & Reel SPQ: 3,000pcs/Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package  BV≥60V ID=3A RDS(ON) ≤90mΩ @ VGS=10V RDS(ON) ≤110mΩ @ VGS=5V  Advanced trench cell design  High speed switch  Available in SOT-23S Package APPLICATION  Portable appliances  Notebook/PC appliances  Power Management  DC/DC Converter PIN DESCRIPTION

AiT Semiconductor Inc. www.ait-ic.com AM3460 MOSFET 60V N-CHANNEL ENHANCEMENT MODE REV1.1 - JAN 2016 RELEASED, JUL 2016 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

VDSS, Drain-Source Voltage 60V VGSS, Gate-Source Voltage ±20V Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

TJ=25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS = 0V, IDS = 250μA 60 V Gate Threshold Voltage VGS(th) VDS = VGS, IDS = 250μA 1.0 1.6 2.5 V Drain Leakage Current IDSS VDS = 48V, VGS = 0V 1 μA TJ=85℃ 30 μA Gate Leakage Current IGSS VGS = ±20V, VDS = 0V ±100 nA On-State Resistance RDS(ON) NOTE1 VGS = 10V, IDS = 0.5A 90 mΩ VGS = 5V, IDS = 0.5A 110 Diode CharacteristicsNOTE2 Diode Forward Voltage VSD ISD = 0.5A, VGS = 0V 0.7 1.3 V NOTE1: CP measured on wafer by probe card. (RDS(ON) depended on packaged type and amount of bonding wires) NOTE2: Pulse test: pulse width 300μs, duty cycle ≤2%.

AiT Semiconductor Inc. www.ait-ic.com AM3460 MOSFET 60V N-CHANNEL ENHANCEMENT MODE REV1.1 - JAN 2016 RELEASED, JUL 2016 UPDATED - - 3 -

PACKAGE INFORMATION

Dimension in SOT-23S Package (Unit: mm)

AiT Semiconductor Inc. www.ait-ic.com AM3460 MOSFET 60V N-CHANNEL ENHANCEMENT MODE REV1.1 - JAN 2016 RELEASED, JUL 2016 UPDATED - - 4 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.