AM3443C AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM3443C MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - SEP 2013 RELEASED, JUN 2017 UPDATED - - 1 - DESCRIPTION FEATURES AM3443C is available in a SOT-26 package.
ORDERING INFORMATION
SPQ: 3,000pcs/Reel AM3443CE6R AM3443CE6VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products -20V/-5.6A, RDS(ON)= 45mΩ(max.) @ VGS=-4.5V RDS(ON)= 66mΩ(max.) @ VGS=-2.5V RDS(ON)= 104mΩ(max.) @ VGS=-1.8V 100% UIS + Rg Tested Reliable and Rugged Super High Dense Cell Design Available in SOT-26 Package APPLICATION Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. TYPICAL APPLICATION P-Channel MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM3443C MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - SEP 2013 RELEASED, JUN 2017 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 D Drain
2 D Drain
3 G Gate
4 S Source
5 D Drain
6 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM3443C MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - SEP 2013 RELEASED, JUN 2017 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted VDSS, Drain-Source Voltage -20V VGSS, Gate-Source Voltage ±12V ID*, Continuous Drain Current TA=25°C -5.6A TA=70°C -4.4A IDM*, 300μs Pulsed Drain Current TA=25°C -22.2A TA=70°C -17.8A IS*, Diode Continuous Forward Current -1A TJ, Maximum Junction Temperature 150°C TSTG, Storage Temperature Range -55°C~150°C PD*, Maximum Power Dissipation TA=25°C 2.1W TA=70°C 1.3W RθJA*,Thermal Resistance-Junction to Ambient t ≤ 10s 60°C/W Steady State 100°C/W Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE: *Surface Mounted on 1in2 pad area, t ≤ 10sec.
AiT Semiconductor Inc. www.ait-ic.com AM3443C MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - SEP 2013 RELEASED, JUN 2017 UPDATED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=-250μA -20 - - V Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V - - -1 μA TJ=85°C - - -30 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=-250μA -0.5 -0.7 -1 V Gate Leakage Current IGSS VGS=±12V, VDS=0V - - ±100 nA Drain-Source On-state Resistance RDS(ON) NOTE1 VGS=-4.5V, IDS=-5.6A - 36 45 mΩ VGS=-2.5V, IDS=-3.5A - 49 66 VGS=-1.8V, IDS=-1.5A - 72 104 Diode Forward Voltage VSDNOTE1 ISD=-1A, VGS=0V - -0.7 -1 V Gate Charge CharacteristicsNOTE2 Total Gate Charge Qg VDS=-10V, VGS=-4.5V, IDS=-5.6A - 6.8 - nC Gate-Source Charge Qgs - 0.8 - Gate-Drain Charge Qgd - 2.5 - Dynamic CharacteristicsNOTE2 Gate Resistance Rg VGS=0V, VDS=0V,f=1MHz - 3.6 - Ω Input Capacitance Ciss VGS=0V, VDS=-10V, Frequency=1.0MHz - 590 - pF Output Capacitance Coss - 122 - Reverse Transfer Capacitance Crss - 92 - Turn-on Delay Time td(ON) VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω - 7.2 - ns Turn-on Rise Time tr - 13.4 - Turn-off Delay Time td(OFF) - 26 - Turn-off Fall Time tf - 17 - Reverse Recovery Time trr ISD=-5.6A, dISD/dt=100A/μs - 18 - ns Reverse Recovery Charge Qrr - 7 - nC NOTE1: Pulse test; pulse width≤300μs, duty cycle≤2%. NOTE2: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM3443C MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - SEP 2013 RELEASED, JUN 2017 UPDATED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM3443C MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - SEP 2013 RELEASED, JUN 2017 UPDATED - - 6 - 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge
AiT Semiconductor Inc. www.ait-ic.com AM3443C MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - SEP 2013 RELEASED, JUN 2017 UPDATED - - 7 - DETAILED INFORMATION 1. Avalanche Test Circuit and Waveforms 2. Switching Time Test Circuit and Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM3443C MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - SEP 2013 RELEASED, JUN 2017 UPDATED - - 8 -
PACKAGE INFORMATION
Dimension in SOT-26 Package (Unit: mm) Symbol MILLIMETERS INCHES Min Max Min Max A - 1.25 - 0.049 A1 0.00 0.05 0.000 0.002 A1 0.90 1.20 0.035 0.047 b 0.30 0.50 0.012 0.020 c 0.08 0.22 0.003 0.009 D 2.70 3.10 0.106 0.122 E 2.60 3.00 0.102 0.118 E1 1.40 1.80 0.055 0.071 e 0.95 BSC 0.037 BSC e1 1.90 BSC 0.075 BSC L 0.30 0.60 0.012 0.024 θ 0° 8° 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM3443C MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV2.0 - SEP 2013 RELEASED, JUN 2017 UPDATED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integ rated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.