AM3424 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM3424 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 1 - DESCRIPTION FEATURES The AM3424 is available in SOT-26 Package 30V/7.4A, RDS(ON)= 17mΩ(max.) @ VGS= 10V RDS(ON)= 21.5mΩ(max.) @ VGS= 4.5V Reliable and Rugged Available in SOT-26 Package
ORDERING INFORMATION
V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package APPLICATION Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Load Switch PIN DESCRIPTION N-Channel MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM3424 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function 1,2,5,6 D Drain
3 G Gate
4 S Source
AiT Semiconductor Inc. www.ait-ic.com AM3424 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage 30V VGSS, Gate-Source Voltage ±20V IDNOTE1, Continuous Drain Current (VGS=10V) TA=25°C 7.4A TA=70°C 5.8A IDMNOTE1, 300μs Pulsed Drain Current (VGS=10V) 21A IS NOTE1, Diode Continuous Forward Current 1A TJ, Maximum Junction Temperature 150℃ TSTG, Storage Temperature Range -55℃~150℃ PD NOTE1, Maximum Power Dissipation TA=25°C 1.4W TA=70°C 0.88W RθJA NOTE1, Thermal Resistance-Junction to Ambient t ≤10s 60℃/W Steady State 90℃/W Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Surface Mounted on 1in2 pad area, t ≤10sec.
AiT Semiconductor Inc. www.ait-ic.com AM3424 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=250μA 30 - - V Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V - - 1 μA TJ=85°C - - 30 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250μA 1.3 1.8 2.5 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Drain-Source On-state Resistance RDS(ON) NOTE2 VGS=10V,IDS=8A - 14 17 mΩ VGS=4.5V,IDS=5A - 16.5 21.5 Diode Characteristics Diode Forward Voltage VSDNOTE2 ISD=1A,VGS=0V - 0.73 1.1 V Reverse Recovery Time trrNOTE3 ISD=8A, dlSD/dt=100A/μs - 15 - ns Reverse Recovery Charge QrrNOTE3 - 4.2 - nC Dynamic CharacteristicsNOTE3 Gate Resistance RG VGS=0V,VDS=0V,F=1MHz 2 2.5 3.4 Ω Input Capacitance Ciss VGS=0V, VDS=15V, Frequency=1.0MHz 630 760 910 pF Output Capacitance Coss 105 125 145 Reverse Transfer Capacitance Crss 57 72 87 Turn-on Delay Time td(ON) VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω - 9 - ns Turn-on Rise Time tr - 9 - Turn-off Delay Time td(OFF) - 24 - Turn-off Fall Time tf - 5.5 - Gate Charge CharacteristicsNOTE3 Total Gate Charge Qg VDS=15V, VGS=4.5V, IDS=8A - 6 8 nC Total Gate Charge Qg VDS=15V, VGS=10V, IDS=8A - 14 17 Threshold Gate Charge Qgth - 1.3 1.6 Gate-Source Charge Qgs - 2.7 3.3 Gate-Drain Charge Qgd - 2.2 2.7 NOTE2: Pulse test: pulse width ≤300μs, duty cycle≤ 2% NOTE3: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM3424 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM3424 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 6 - 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge
AiT Semiconductor Inc. www.ait-ic.com AM3424 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 7 - DETAILED INFORMATION Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM3424 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 8 -
PACKAGE INFORMATION
Dimension in SOT-26 (Unit: mm) Symbol Min Max A - 1.250 A1 0.000 0.050 A2 0.900 1.200 b 0.300 0.500 c 0.080 0.220 D 2.700 3.100 E 2.600 3.000 E1 1.400 1.800 e 0.950 (BSC) e1 1.900 (BSC) L 0.300 0.600 θ 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM3424 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such application s is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server s property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.