DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
AiT Semiconductor Inc. www.ait-ic.com AM3423 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - AUG 2017 RELEASED - - 1 - DESCRIPTION FEATURES AM3423 is available in a SOT-23S package. -20V/-2A, RDS(ON) = 150mΩ(MAX) @VGS = -4.5V RDS(ON) = 180mΩ(MAX) @VGS = -2.5V Super High dense cell design for extremely low RDS(ON) Reliable and Rugged Available in a SOT-23S package. ORDERING INFORMATION APPLICATION Package Type Part Number SOT-23S SPQ: 3,000pcs/Reel E3S AM3423E3SR AM3423E3SVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Power Management Portable Equipment and Battery Powered Systems PIN DESCRIPTION
AiT Semiconductor Inc. www.ait-ic.com AM3423 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - AUG 2017 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM3423 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - AUG 2017 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TC= 25℃, unless otherwise noted VDS, Drain-Source Voltage -20V VGS, Gate-Source Voltage ±10V ID, Drain Current-Continuous -2A Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=-250μA -20 - - V Zero-Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - - -1 μA Gate-Body Leakage Current, Forward IGSSF VGS=10V, VDS=0V - - 100 nA Gate-Body Leakage Current, Reverse IGSSR VGS=-10V, VDS=0V - - -100 nA On Characteristics Gate Threshold Voltage VGS(th) VGS=VDS,ID=-250μA -0.4 - -1.0 V Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V,ID=-3.0A - - 150 mΩ VGS=-2.5V,ID=-2.0A - - 180 Drain-Source Diode Characteristics and Maximum Ratings Diode-Source Diode Forward Voltage VSD VGS=0V, IS=1.25A - - -1.2 V
AiT Semiconductor Inc. www.ait-ic.com AM3423 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - AUG 2017 RELEASED - - 4 - TYPICAL CHARACTERISTICS 1. Output Characteristics 2. Transfer Characteristics 3. Breakdown Voltage Variation with Temperature 4. Gate Threshold Variation with Temperature 5. On-Resistance Variation with Temperature 6. On-Resistance vs. Drain Current
AiT Semiconductor Inc. www.ait-ic.com AM3423 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - AUG 2017 RELEASED - - 5 - 7. On-Resistance vs. Gate-to-Source Voltage 8. Source-Drain Diode Forward Voltage
AiT Semiconductor Inc. www.ait-ic.com AM3423 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - AUG 2017 RELEASED - - 6 -
PACKAGE INFORMATION
Dimension in SOT-23S (Unit: mm)
AiT Semiconductor Inc. www.ait-ic.com AM3423 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - AUG 2017 RELEASED - - 7 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applicat ions. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.