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AiT Semiconductor Inc. www.ait-ic.com AM3422 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 1 - DESCRIPTION FEATURES AM3422 is available in a SOT-23 package.  55V/2.1A, RDS(ON)=130mΩ(max.) @ VGS=4.5V RDS(ON)=180mΩ(max.) @ VGS=2.5V  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant)  Available in a SOT-23 package. ORDERING INFORMATION APPLICATION Package Type Part Number SOT-23 E3 AM3422E3R AM3422E3VR Note V: Halogen free Package R: Tape & Reel SPQ: 3,000pcs/Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package  Power Management in DC/AC Inverter Systems. PIN DESCRIPTION N-Channel MOSFET

AiT Semiconductor Inc. www.ait-ic.com AM3422 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM3422 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage 55V VGSS, Gate-Source Voltage ±12V ID NOTE1, Continuous Drain Current(VGS=4.5V) 2.1A IDM NOTE1, 300μs Pulsed Drain Current(VGS=4.5V) 8A IS NOTE1, Diode Continuous Forward Current 1A TJ, Maximum Junction Temperature 150℃ TSTG, Storage Temperature Range -55℃~150℃ PD NOTE1, Maximum Power Dissipation TA=25oC 0.83W TA=100℃ 0.3W RθJANOTE1, Thermal Resistance-Junction to Ambient 150°C/W Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Surface Mounted on 1in2 pad area, t ≤ 10sec.

AiT Semiconductor Inc. www.ait-ic.com AM3422 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 4 -

ELECTRICAL CHARACTERISTICS

TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=250μA 55 - - V Zero Gate Voltage Drain Current IDSS VDS=44V,VGS=0V - - 1 μA TJ=85°C 30 Gate Threshold Voltage VGS(th) VDS=VGS,IDS=250μA 0.6 1.3 2 V Gate Leakage Current IGSS VGS=±12V, VDS=0V - - ±100 nA Drain-Source On-state Resistance RDS(ON) NOTE2 VGS=4.5V,IDS=2.1A - 90 130 mΩ VGS=2.5V,ID=1.5A - 140 180 Diode Characteristics Diode Forward Voltage VSD NOTE2 ISD=1A,VGS=0V - 0.8 1.1 V Reverse Recovery Time trr ISD=2.1A, dlSD/dt=100A/μs - 21 - ns Reverse Recovery Charge Qrr - 16 - nC Dynamic Characteristics NOTE3 Gate Resistance RG VGS=0V,VDS=0V,F=1MHz - 2 - Ω Input Capacitance CISS VGS=0V, VDS=30V, Frequency=1.0MHz - 450 - pF Output Capacitance COSS - 40 - Reverse Transfer Capacitance CRSS - 20 - Turn-on Delay Time tD(ON) VDD=30V, RL=30Ω IDS=1A, VGEN=10V, RG=6Ω - 7 13 ns Turn-on Rise Time tR - 9 17 Turn-off Delay Time tD(OFF) - 20 36 Turn-off Fall Time tF - 3 6 Gate Charge Characteristics NOTE3 Total Gate Charge QG VDS=30V, VGS=10V, IDS≡2.1A - 11 16 nC Gate-Source Charge QGS - 1.3 - Gate-Drain Charge QGD - 1.6 - NOTE2: Pulse test; pulse width≤300μs, duty cycle≤2%. NOTE3: Guaranteed by design, not subject to production testing.

AiT Semiconductor Inc. www.ait-ic.com AM3422 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance

AiT Semiconductor Inc. www.ait-ic.com AM3422 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 6 - 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge

AiT Semiconductor Inc. www.ait-ic.com AM3422 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 7 - DETAILED INFORMATION Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms

AiT Semiconductor Inc. www.ait-ic.com AM3422 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 8 -

PACKAGE INFORMATION

Dimension in SOT-23 Package (Unit: mm) SYMBOL MIN MAX A - 1.200 A1 0.000 0.080 A2 0.900 1.120 b 0.300 0.500 c 0.080 0.220 D 2.700 3.100 E 2.600 3.000 E1 1.400 1.800 e 0.950(BSC) e1 1.900(BSC) L 0.300 0.600 θ 0° 8°

AiT Semiconductor Inc. www.ait-ic.com AM3422 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use i n life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or server e property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.