AM3419

AM3419 AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com AM3419 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 1 - JDESCRIPTION FEATURES The AM3419 is available in SOT-23 Package  -20V/-3.5A, RDS(ON)= 73mΩ(max.) @ VGS= -4.5V RDS(ON)= 110mΩ(max.) @ VGS= -2.5V RDS(ON)= 193mΩ(max.) @ VGS= -1.8V  Reliable and Rugged  Available in SOT-23 Package ORDERING INFORMATION APPLICATION Package Type Part Number SOT-23 E3 AM3419E3R AM3419E3VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package  Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. PIN DESCRIPTION P-Channel MOSFET

AiT Semiconductor Inc. www.ait-ic.com AM3419 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM3419 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage -20V VGSS, Gate-Source Voltage ±12V IDNOTE1, Continuous Drain Current TA=25°C -3.5A TA=70°C -2.8A IDMNOTE1, 300μs Pulsed Drain Current TA=25°C -14.2A TA=70°C -11.4A IS NOTE1, Diode Continuous Forward Current -1A TJ, Maximum Junction Temperature 150℃ TSTG, Storage Temperature Range -55℃~150℃ PD NOTE1, Maximum Power Dissipation TA=25°C 1W TA=70°C 0.7W RθJA NOTE1, Thermal Resistance-Junction to Ambient t ≤10s 90℃/W Steady State 125℃/W Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Surface Mounted on 1in2 pad area, t ≤10sec.

AiT Semiconductor Inc. www.ait-ic.com AM3419 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 4 -

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=-250μA -20 - - V Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V - - -1 μA TJ=85°C - - -30 Gate Threshold Voltage VGS(th) VDS=VGS,IDS=-250μA -0.5 -0.7 -1 V Gate Leakage Current IGSS VGS=±12V, VDS=0V - - ±100 nA Drain-Source On-state Resistance RDS(ON) NOTE2 VGS=-4.5V,IDS=-3.5A - 58 73 mΩ VGS=-2.5V,IDS=-2.2A - 82 110 VGS=-1.8V,IDS=-0.9A - 130 193 Diode Forward Voltage VSDNOTE2 ISD=-1A, VGS=0V - -0.7 -1 V Gate Charge CharacteristicsNOTE3 Total Gate Charge Qg VDS=-10V, VGS=-4.5V, IDS=-3.5A - 5.2 - nC Gate-Source Charge Qgs - 0.7 - Gate-Drain Charge Qgd - 1.8 - Dynamic CharacteristicsNOTE3 Gate Resistance RG VGS=0V,VDS=0V,F=1MHz - 4.2 - Ω Input Capacitance Ciss VGS=0V, VDS=-10V, Frequency=1.0MHz - 357 - pF Output Capacitance Coss - 72 - Reverse Transfer Capacitance Crss - 61 - Turn-on Delay Time td(ON) VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω - 5.6 - ns Turn-on Rise Time tr - 13.2 - Turn-off Delay Time td(OFF) - 21 - Turn-off Fall Time tf - 4.5 - Reverse Recovery Time trr ISD=-3.5A, dlSD/dt=100A/μs - 12 - ns Reverse Recovery Charge Qrr - 6.6 - nC NOTE2: Pulse test: pulse width ≤300us, duty cycle≤ 2% NOTE3: Guaranteed by design, not subject to production testing.

AiT Semiconductor Inc. www.ait-ic.com AM3419 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance

AiT Semiconductor Inc. www.ait-ic.com AM3419 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 6 - 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge

AiT Semiconductor Inc. www.ait-ic.com AM3419 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 7 - DETAILED INFORMATION Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms

AiT Semiconductor Inc. www.ait-ic.com AM3419 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 8 -

PACKAGE INFORMATION

Dimension in SOT-23 (Unit: mm) Symbol Min Max A - 1.200 A1 0.000 0.080 A2 0.900 1.120 b 0.300 0.500 c 0.080 0.220 D 2.700 3.100 E 2.600 3.000 E1 1.400 1.800 e 0.950 ( BSC) e1 1.900 (BSC) L 0.300 0.600 θ 0° 8°

AiT Semiconductor Inc. www.ait-ic.com AM3419 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - MAR 2016 RELEASED - - 9 - IMPORTANT NOTICE AiT Semiconduct or Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before p lacing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other crit ical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server s property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.