AM3416 AITSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

AiT Semiconductor Inc. www.ait-ic.com AM3416 MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - OCT 2013 RELEASED, JAN 2021 UPDATED - - 1 - DESCRIPTION FEATURES VDS=20V VGS=±12V ID(A)=6A RDS(ON)=26mΩ(Max.) @VGS=4.5V RDS(ON)=37mΩ(Max.) @VGS=2.5V AM3416 is available in a SOT-23 package. ⚫ ESD Protected ⚫ Reliable and Rugged ⚫ Available in a SOT-23 package. ORDERING INFORMATION APPLICATION Package Type Part Number SOT-23 SPQ: 3,000pcs/Reel E3 AM3416E3R AM3416E3VR Note R: Tape & Reel V: Halogen free Package AiT provides all RoHS products ⚫ Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. N CHANNEL MOSFET

AiT Semiconductor Inc. www.ait-ic.com AM3416 MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - OCT 2013 RELEASED, JAN 2021 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM3416 MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - OCT 2013 RELEASED, JAN 2021 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage 20V VGSS, Gate-Source Voltage ±12V IDNOTE1, Continuous Drain Current(VGS=4.5V) TA=25°C 6A TA=100°C 3.7A IDMNOTE1, 300µs Pulsed Drain Current(VGS=4.5V) 20A ISNOTE1, Diode Continuous Forward Current 1.4A TJ, Maximum Junction Temperature 150°C TSTG, Storage Temperature Range -55°C~150°C PDNOTE1, Maximum Power Dissipation TA=25°C 1.4W TA=100°C 0.5W RθJANOTE1,Thermal Resistance-Junction to Ambient t ≤ 10s 90°C/W Steady state 150°C/W Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Surface Mounted on 1in2 pad area, t ≤ 10sec.

AiT Semiconductor Inc. www.ait-ic.com AM3416 MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - OCT 2013 RELEASED, JAN 2021 UPDATED - - 4 -

ELECTRICAL CHARACTERISTICS

TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250µA 20 - - V Zero Gate Voltage Drain Current IDSS VDS=16V, VGS=0V - - 1 µA TJ=85°C - - 30 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250µA 0.5 0.7 1.5 V Gate Leakage Current IGSS VGS=±10V, VDS=0V - - ±10 µA Drain-Source On-state Resistance RDS(ON) NOTE2 VGS=4.5V, IDS=6A - 22 26 mΩ VGS=2.5V, IDS=5A - 29 37 Diode Characteristics Diode Forward Voltage VSDNOTE2 ISD=1.3A, VGS=0V - 0.8 1.3 V Reverse Recovery Time trrNOTE3 IDS=4A, dlSD/dt=100A/µs - 16 - ns Reverse Recovery Charge QrrNOTE3 - 10 - nC Dynamic CharacteristicsNOTE3 Gate Resistance RG VGS=0V,VDS=0V,F=1MHz - 4 - Ω Input Capacitance Ciss VGS=0V, VDS=10V, Frequency=1.0MHz - 600 800 pF Output Capacitance Coss - 135 180 Reverse Transfer Capacitance Crss - 125 175 Turn-on Delay Time td(ON) VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω - 5 10 ns Turn-on Rise Time tr - 9 17 Turn-off Delay Time td(OFF) - 25 46 Turn-off Fall Time tf - 5 10 Gate Charge CharacteristicsNOTE3 Total Gate Charge Qg VDS=10V, VGS=4.5V, IDS=4A - 12 17 nC Gate-Source Charge Qgs - 1.4 - Gate-Drain Charge Qgd - 4.4 - NOTE2: Pulse test; pulse width≤ 300 µs, duty cycle ≤ 2%. NOTE3: Guaranteed by design, not subject to production testing.

AiT Semiconductor Inc. www.ait-ic.com AM3416 MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - OCT 2013 RELEASED, JAN 2021 UPDATED - - 5 - TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance

AiT Semiconductor Inc. www.ait-ic.com AM3416 MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - OCT 2013 RELEASED, JAN 2021 UPDATED - - 6 - 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge

AiT Semiconductor Inc. www.ait-ic.com AM3416 MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - OCT 2013 RELEASED, JAN 2021 UPDATED - - 7 - TEST CIRCUIT 1. Avalanche Test Circuit and Waveforms 2. Switching Time Test Circuit and Waveforms

AiT Semiconductor Inc. www.ait-ic.com AM3416 MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - OCT 2013 RELEASED, JAN 2021 UPDATED - - 8 -

PACKAGE INFORMATION

Dimension in SOT-23 Package (Unit: mm) Symbol Millimeters Inches Min Max Min Max A - 1.20 - 0.047 A1 0.00 0.08 0.000 0.003 A2 0.90 1.12 0.035 0.044 b 0.30 0.50 0.012 0.020 c 0.08 0.22 0.003 0.009 D 2.70 3.10 0.106 0.122 E 2.60 3.00 0.102 0.188 E1 1.40 1.80 0.055 0.071 e 0.950 BSC 0.037 BSC e1 1.900 BSC 0.075 BSC L 0.30 0.60 0.012 0.024 θ 0° 8° 0° 8°

AiT Semiconductor Inc. www.ait-ic.com AM3416 MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - OCT 2013 RELEASED, JAN 2021 UPDATED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor I nc.'s integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.