DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
AiT Semiconductor Inc. www.ait-ic.com AM3415 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.1 -NOV 2011 RELEASED, JUL 2016 UPDATED - - 1 - DESCRIPTION FEATURES The AM3415 is the P -Channel logic enhancement mode power field effect transistor is produced using high cell density. A dvanced trench technology to provide excellent R DS(ON) low gate charge and operation with gate voltage as 1.5V. This device is suitable for use as a load switch or in applications. The AM3415 is available in SOT-23 Package -20V/-4.0A, RDS(ON) =45mΩ(typ.)@VGS =-4.5V -20V/-4.0A, RDS(ON) =54mΩ(typ.)@VGS =-2.5V -20V/-2.0A, RDS(ON) =68mΩ(typ.)@VGS =-1.8V -20V/-1.0A, RDS(ON) =92mΩ(typ.)@VGS =-1.5V Super high density cell design for extremely low RDS(ON) Exceptional on- resistance and Maximum DC current capability ESD Protected : 3kV Available in SOT-23 package ORDERING INFORMATION APPLICATIONS Package Type Part Number SOT-23 E3 AM3415E3R AM3415E3VR Note V: Halogen free Package R : Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package Cellular/Portable Load Switch P-CHANNEL MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM3415 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.1 -NOV 2011 RELEASED, JUL 2016 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM3415 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.1 -NOV 2011 RELEASED, JUL 2016 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage -20 V VGSS, Gate-Source Voltage ±8 V ID, Continuous Drain Current (VGS=-8V) TA=25°CNOTE1 -4.0 A TA=70°CNOTE1 -3.5 A IDM, Pulsed Drain CurrentNOTE2 -20 A PD, Power Dissipation TA=25°C 1.5 W TA=70°C 0.9 W TJ, Operation Junction Temperature -55℃ ~ 150℃ TSTG, Storage Temperature Range 55℃ ~ 150℃ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. NOTE2: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% THERMAL INFORMATION Parameter Symbol Typ. Max. Units Thermal Resistance-Junction to Ambient Steady-State RθJA - 140 ℃/W Thermal Resistance Junction to Lead Steady-State RθJL - 80 ℃/W
AiT Semiconductor Inc. www.ait-ic.com AM3415 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.1 -NOV 2011 RELEASED, JUL 2016 UPDATED - - 4 -
ELECTRICAL CHARACTERISTICS
TJ = 25℃, unless otherwise specified Parameter Symbol Conditions Min Type Max Units Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250μA -20 - - V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.3 - -1.0 V Gate Leakage Current IGSS VDS=0V,VGS=±8V - - ±10 μA Zero Gate Voltage, Drain-Source Leakage Current IDSS VDS=-20V,VGS=0V TJ=25°C - - μA VDS=-20V,VGS=0V TJ=55°C Drain-source On-ResistanceNOTE2 RDS(ON) VGS=-4.5V,ID=-4.0A 44 54 mΩ VGS=-2.5V,ID=-4.0A 53 62 VGS=-1.8V,ID=-2.0A 66 75 VGS=-1.5V,ID=-1.0A 85 110 Forward Transconductance gfs VDS=-5V,ID=-4.0A - 22 - S Source-Drain Diode Diode Forward Voltage VSD IS=-1.0A,VGS=0V - -0.67 -1.0 V Continuous Source CurrentNOTE1,3 IS - - -6 A Dynamic Parameters Total Gate Charge Qg (-4.5V) VDS=-10V VGS=-4.5V ID=-4.0A - 11.1 - nC Gate-Source Charge Qgs - 3.1 - Gate-Drain Charge Qgd - 2.4 - Input Capacitance Ciss VDS=-10V VGS=0V f=1MHz - 989 - pF Output Capacitance Coss - 167 - Reverse Transfer Capacitance Crss - 75.5 - Turn-On Time td(on) VDD=-10V ID=-1A VGEN=-4.5V RG=2.5Ω - 712 - ns tr - 1386 - Turn-Off Time td(off) - 9.1 - μs tf - 4 - NOTE1: The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. NOTE2: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% NOTE3: The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
AiT Semiconductor Inc. www.ait-ic.com AM3415 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.1 -NOV 2011 RELEASED, JUL 2016 UPDATED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS TA=25℃, unless Specified 1. Output Characteristics 2. Drain-Source On Resistance 3. Drain Source On Resistance 4. Transfer Characteristics 5. Gate Charge 6. Drain Source Resistance
AiT Semiconductor Inc. www.ait-ic.com AM3415 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.1 -NOV 2011 RELEASED, JUL 2016 UPDATED - - 6 - 7. Capacitance 8. Source Drain Diode Forward 9. Power Dissipation 10. Drain Current 11. Thermal Transient Impedance
AiT Semiconductor Inc. www.ait-ic.com AM3415 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.1 -NOV 2011 RELEASED, JUL 2016 UPDATED - - 7 -
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm) Symbol Millimeters Inches Min Max Min Max A 1.05 1.25 0.041 0.049 A1 0.00 0.10 0.000 0.004 A2 1.05 1.15 0.041 0.045 b 0.30 0.50 0.012 0.020 c 0.10 0.20 0.004 0.008 D 2.82 3.02 0.111 0.119 E 1.50 1.70 0.059 0.067 E1 2.65 2.95 0.104 0.116 e 0.95(BSC) 0.037 (BSC) e1 1.80 2.00 0.071 0.079 L 0.30 0.60 0.012 0.024 θ 0° 8° 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM3415 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.1 -NOV 2011 RELEASED, JUL 2016 UPDATED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or ser vice without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, i ntended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server e property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconduc tor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.