AM3413A AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM3413A MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2019 RELEASED - - 1 - DESCRIPTION FEATURES VDS=-20V VGS=±12V ID(A)=-3.2A RDS(ON)=75mΩ(Typ.)@VGS=-4.5V RDS(ON)=105mΩ(Typ.)@VGS=-2.5V RDS(ON)=140mΩ(Typ.)@VGS=-1.8V The AM3413A is available in SOT-23S package. ⚫ Fast switch ⚫ 1.8V Low gate drive applications ⚫ Available in SOT-23S package ORDERING INFORMATION APPLICATIONS Package Type Part Number SOT-23S SPQ: 3,000pcs/Reel E3S AM3413AE3SR AM3413AE3SVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS free products ⚫ Portable instruments ⚫ Load Switch P CHANNEL MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM3413A MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2019 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM3413A MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2019 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted VDSS, Drain-Source Voltage -20V VGSS, Gate-Source Voltage ±12V ID, Continuous Drain Current TA=25°C -3.2A TA=70°C -2.6A IDM, Pulsed Drain CurrentNOTE1 12.8A PD, Power DissipationNOTE2 TA=25°C 1.3W TA=70°C 0.8W TJ, Operation Junction Temperature -55℃ ~ 150℃ TSTG, Storage Temperature Range -55℃ ~ 150℃ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE Parameter Symbol Typ. Max. Unit Thermal Resistance Junction to AmbientNOTE2 t≦10s RθJA - 95 ℃/W Thermal Resistance Junction to AmbientNOTE2,3 Steady-State - 130
AiT Semiconductor Inc. www.ait-ic.com AM3413A MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2019 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Parameters Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250μA -20 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250μA -0.4 -0.7 -1 V Gate Leakage Current IGSS VDS=0V, VGS=±12V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V, TJ=25°C - - -1 μA VDS=-16V, VGS=0V, TJ=75°C - - -10 Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-3.2A - 75 85 mΩ VGS=-2.5V, ID=-2.6A - 105 130 VGS=-1.8V, ID=-2A - 140 180 Forward Transconductance Gfs VDS=-5V, ID=-3A - 8 - S Diode Characteristics Diode Forward Voltage VSD IS=-1A, VGS=0V - - -1 V Continuous Source Current IS - - -3.2 A Reverse Recovery Time trr IS=-3A, dl/dt=100A/μs, TJ=25°C - 8.1 - ns Reverse Recovery Charge Qrr - 3.2 - nC Dynamic and Switching Parameters Total Gate Charge Qg VDS=-10V, VGS=-4.5V ID=-3.2A - 9.5 13.3 nC Gate-Source Charge Qgs - 2.1 2.9 Gate-Drain Charge Qgd - 2.4 3.4 Input Capacitance Ciss VDS=-10V, VGS=0V f=1MHz - 675 - pF Output Capacitance Coss - 85 - Reverse Transfer Capacitance Crss - 66 - Turn-On Time td(on) VDD=-10V, VGEN=-4.5V, RG=3Ω, ID=-3A - 4.8 9 ns tr - 16 30 Turn-Off Time td(off) - 20 38 tf - 9 17 NOTE1: Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. NOTE2: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board in a still air e nvironment with ma ximum junction temperature TJ(MAX)=150°C (initial temperature TA=25°C). NOTE3: TJ(MAX)=150°C, using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used.
AiT Semiconductor Inc. www.ait-ic.com AM3413A MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2019 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Output Characteristics 2. Drain-Source On Resistance 3. Gate Charge 4. Capacitance 5. Gate Threshold Voltage 6. Power Dissipation
AiT Semiconductor Inc. www.ait-ic.com AM3413A MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2019 RELEASED - - 6 - 7. Gate Threshold Voltage 8. Drain Current vs. TJ 9. Maximum Safe Operation Area 10. Thermal Transient Impedance 11. Gate Charge Waveform 12. Switching Time Waveform
AiT Semiconductor Inc. www.ait-ic.com AM3413A MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2019 RELEASED - - 7 -
PACKAGE INFORMATION
Dimension in SOT-23S Package (Unit: mm) Symbol Millimeters Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 TYP. 0.037 TYP. e1 1.800 2.000 0.071 0.079 L 0.550 REF. 0.022 REF. L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM3413A MOSFET -20V P-CHANNEL ENHANCEMENT MODE REV1.0 - APR 2019 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any i ts product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the informati on being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such app lications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or r servere property, or environmental damage. In order to mi property, or environmental damage. In order to minimiz e risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.