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AiT Semiconductor Inc. www.ait-ic.com AM3412 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2018 RELEASED - - 1 - DESCRIPTION FEATURES The AM3412 is available in SOT-23S Package Type 50V/0.1A, RDS(ON)=3.5Ω(MAX) @VGS=5V ID = 0.1A RDS(ON) = 10Ω(MAX) @VGS= 2.75V. ID = 0.1A Super High dense cell design for extremely low RDS(ON). Reliable and Rugged. Low Threshold Voltage (0.5V- 1.5V) Make it Ideal for Low Voltage Applications. Available in SOT-23S Package ORDERING INFORMATION APPLICATIONS Package Type Part Number SOT-23S SPQ: 3,000pcs/Reel E3S AM3412E3SR AM3412E3SVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Power Management in DC/DC Converters, Portable and Battery-powered Products. PIN DESCRIPTION
AiT Semiconductor Inc. www.ait-ic.com AM3412 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2018 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM3412 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2018 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA=25°C, Unless otherwise noted VDS, Drain-Source Voltage 50V VGS, Gate-Source Voltage ±20V ID, Drain Current Continuous 0.1A Stresses above may cause permanent damage to the dev ice. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
T A=25°C, Unless otherwise noted Parameter Symbol Conditions Min Typ Max Units Off Characteristics Drain to Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 50 - - V Zero-Gate Voltage, Drain-Source IDSS VDS=50V, VGS=0V - - 0.5 μA VDS=25V, VGS=0V - - 0.1 Gate Body Leakage Current, Forward IGSSF VGS=20V, VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-20V, VDS=0V - - -100 nA On Characteristics Gate Threshold Voltage VGS(th) VGS=VDS, ID=1.0mA 0.5 - 1.5 V Static Drain-source On-Resistance RDS(ON) VGS=5.0V, ID=-0.2A - - 3.5 Ω VGS=2.75V, ID=0.2A - - 10 Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS=0V, IS=0.2A - - 2.5 V
AiT Semiconductor Inc. www.ait-ic.com AM3412 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2018 RELEASED - - 6 -
PACKAGE INFORMATION
Dimension in SOT-23S Package (Unit: mm) DIM MIN MAX A 2.80 3.04 B 1.20 1.40 C 0.89 1.13 D 0.30 0.50 G 1.78 2.04 H 0.01 0.10 J 0.08 0.18 K 0.45 0.60 L 0.89 1.02 S 2.10 2.50 V 0.42 0.60
AiT Semiconductor Inc. www.ait-ic.com AM3412 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2018 RELEASED - - 7 - IMPORTANT NOTICE AiT Components (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Components ’ integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in li fe support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Components assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.