AM3406

AM3406 AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com AM3406 MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - MAR 2011 RELEASED, APR 2019 UPDATED - - 1 - DESCRIPTION FEATURES AM3406 is the N -Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in -line power loss are needed in small outline surface mount package. The AM3406 is available in SOT-23 Package.  VDS = 30V, ID = 6.7A RDS(ON)=18mΩ(Typ.)@VGS=10V RDS(ON)=23mΩ(Typ.)@VGS=4.5V  Fast switch  Low gate drive applications  High power and current handling capability  Available in SOT-23 Package ORDERING INFORMATION APPLICATIONS Package Type Part Number SOT-23 SPQ: 3,000pcs/Reel AM3406E3R AM3406E3VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS free products  Power Management in Note book  Portable Equipment  DC/DC Converter PIN CONFIGURATION

AiT Semiconductor Inc. www.ait-ic.com AM3406 MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - MAR 2011 RELEASED, APR 2019 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM3406 MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - MAR 2011 RELEASED, APR 2019 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted VDSS, Drain-Source Voltage 30V VGSS, Gate-Source Voltage ±20V ID, Continuous Drain Current TA=25°C 6.7A TA=70°C 5.3A IDM, Pulsed Drain CurrentNOTE1 26.8A PD, Power Dissipation TA=25°C 1.6W TA=70°C 1.0W TJ, Operation Junction Temperature -55℃ ~ 150℃ TSTG, Storage Temperature Range -55℃ ~ 150℃ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE Parameter Symbol Typ. Max. Unit Thermal Resistance Junction to AmbientNOTE2 t≦10s RθJA - 80 ℃/W Thermal Resistance Junction to AmbientNOTE2,3 Steady-State - 120

AiT Semiconductor Inc. www.ait-ic.com AM3406 MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - MAR 2011 RELEASED, APR 2019 UPDATED - - 4 -

ELECTRICAL CHARACTERISTICS

TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Parameters Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 30 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 1 1.5 2 V Gate Leakage Current IGSS VDS=0V,VGS=±20V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V, TJ=25°C - - 1 μA VDS=24V,VGS=0V, TJ=75°C - - 10 Drain-Source On-Resistance RDS(ON) VGS=10V,ID=6.7A - 18 22 mΩ VGS=4.5V,ID=4.8A - 23 30 VGS=3.5V,ID=2A - 27 34 Forward Transconductance GFS VDS=15V, ID=6A - 6 - S Diode Characteristics Diode Forward Voltage VSD IS=1A,VGS=0V - 0.7 1.0 V Continuous Source Current IS - - 6.7 A Reverse Recovery Time trr IS=6A, dl/dt=100A/μs, TJ=25°C - 20 - ns Reverse Recovery Charge Qrr - 1.2 - nC Dynamic and Switching Parameters Total Gate Charge Qg VDS=15V, VGS=10V ID=6A - 12.7 17.8 nC Total Gate Charge(4.5V) Qg - 6.2 8.7 Gate-Source Charge Qgs - 2.4 3.4 Gate-Drain Charge Qgd - 2 2.8 Input Capacitance Ciss VDS=15V, VGS=0V f=1MHz - 550 - pF Output Capacitance Coss - 78 - Reverse Transfer Capacitance Crss - 62 - Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz - 2.4 - Ω Turn-On Time td(on) VDD=15V, VGEN=10V, RG=6Ω, ID=1A - 2.5 5 ns tr - 7.6 14 Turn-Off Time td(off) - 19.8 38 tf - 4.2 8 NOTE1: Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. NOTE2: Measure the value in a still air environment at TA=25°C, using an installation mounted on a 1 in2 FR-4 board, maximum junction temperature TJ(MAX)=150°C. NOTE3: TJ(MAX)=150°C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used.

AiT Semiconductor Inc. www.ait-ic.com AM3406 MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - MAR 2011 RELEASED, APR 2019 UPDATED - - 5 - TYPICAL CHARACTERISTICS 1. Output Characteristics 2. Drain-Source On Resistance 3. Gate Charge 4. Capacitance 5. Gate Threshold Voltage 6. Power Dissipation

AiT Semiconductor Inc. www.ait-ic.com AM3406 MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - MAR 2011 RELEASED, APR 2019 UPDATED - - 6 - 7. RDS(ON) vs Junction Temperature 8. Drain Current vs. TJ 9. Maximum Safe Operation Area 10. Thermal Transient Impedance 11. Gate Chrge Waveform 12. Switching Time Waveform

AiT Semiconductor Inc. www.ait-ic.com AM3406 MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - MAR 2011 RELEASED, APR 2019 UPDATED - - 7 -

PACKAGE INFORMATION

Dimension in SOT-23 Package (Unit: mm) Symbol Millimeters Inches Min. Max. Min. Max. A 1.000 1.300 0.039 0.049 A1 0.000 0.100 0.000 0.004 A2 1.000 1.200 0.039 0.047 b 0.300 0.500 0.012 0.020 c 0.047 0.207 0.002 0.008 D 2.800 3.000 0.110 0.118 E 1.500 1.700 0.059 0.067 E1 2.600 3.000 0.102 0.118 e 0.950 TYP. 0.037 TYP e1 1.900 TYP. 0.075 TYP. L1 0.250 0.550 0.010 0.022 θ 0° 8° 0° 8°

AiT Semiconductor Inc. www.ait-ic.com AM3406 MOSFET 30V N-CHANNEL ENHANCEMENT MODE REV2.0 - MAR 2011 RELEASED, APR 2019 UPDATED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the ri ght to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the infor mation being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of Ai T products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.