AM3401B AITSEMI | Alldatasheet
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Technical content
AiT Semiconductor Inc. www.ait-ic.com AM3401B MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2021 RELEASED - - 1 - DESCRIPTION FEATURES VDS= -30V VGS= ±12V ID(A)= -4.2A RDS(ON) = 55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. The AM3401B is available in SOT-23 package.
ORDERING INFORMATION
SPQ: 3,000pcs/Reel AM3401BE3R AM3401BE3VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products ⚫ Super High dense cell design for extremely low RDS(ON) ⚫ Reliable and Rugged ⚫ Available in SOT-23 package APPLICATION ⚫ Power Management ⚫ Portable Equipment and Battery Powered Systems. P-CHANNEL MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM3401B MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2021 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM3401B MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2021 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise noted VDS, Drain-Source Voltage -30V VGS, Gate-Source Voltage ±12V ID, Continuous Drain Current -4.2A Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA=25°C, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250μA -30 - - V Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0 - - -1 μA Gate Body Leakage Current, Forward IGSSF VDS=0V, VGS=12V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VDS=0V, VGS=-12V - - -100 nA On Characteristics Gate Threshold Voltage VGS(th) VGS=VDS, ID=-250μA -0.7 - -1.3 V Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=-4.2A - 50 55 mΩ VGS=-4.5V, ID=-4.0A - 60 70 VGS=-2.5V, ID=-1.0A - 80 120 Drain-Source Diode Characteristics and Maximum Ratings Diode-Source Diode Forward Voltage VSD VGS=0V, IS=-1.0A - - -1.0 V
AiT Semiconductor Inc. www.ait-ic.com AM3401B MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2021 RELEASED - - 4 - TYPICAL PERFORMANCE CHARACTERISTICS 1. On-Region Characteristics 2. Transfer Characteristics 3. On-Resistance vs. Drain Current and Gate Voltage 4. On-Resistance vs. Junction Temperature 5. On-Resistance vs. Gate-Source Voltage 6. Body-Diode Characteristics
AiT Semiconductor Inc. www.ait-ic.com AM3401B MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2021 RELEASED - - 5 -
PACKAGE INFORMATION
Dimension in SOT-23 (Unit: mm)
AiT Semiconductor Inc. www.ait-ic.com AM3401B MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2021 RELEASED - - 6 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its prod uct, specifications, t o discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc .'s integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life sup port applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server e property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer shou ld provide adequate de sign and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or applicatio n suppo rt. AiT warrants the performance of its products of the specifications applicable at the time of sale.