AM3134

AM3134 AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com AM3134 MOSFET 20V N-CHANNEL ENHAANCEMENT MODE REV1.0 - JAN 2019 RELEASED - - 1 - DESCRIPTION FEATURES AM3134 is the N -Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in -line power loss needed in small outline surface mount package. AM3134 is available in SOT-723 package. ⚫ VDS = 20V, ID = 0.8A RDS(ON) = 200mΩ(Typ.)@VGS = 4.5V RDS(ON) = 300mΩ(Typ.)@VGS = 2.5V RDS(ON) = 500mΩ(Typ.)@VGS = 1.8V RDS(ON) = 800mΩ(Typ.)@VGS = 1.5V ⚫ Fast Switch ⚫ Low Gate Drive Applications ⚫ Low Input Capacitance ⚫ Available in SOT-723 package ORDER INFORMATION APPLICATION Package Type Part Number SOT-723 SPQ: 8,000pcs/Reel VM3 AM3134VM3R AM3134VM3VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS free products ⚫ Hand-Held Instruments ⚫ Load Switch ⚫ Battery Protection PIN CONFIGURATION

AiT Semiconductor Inc. www.ait-ic.com AM3134 MOSFET 20V N-CHANNEL ENHAANCEMENT MODE REV1.0 - JAN 2019 RELEASED - - 2 - PIN DESCRIPTION Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM3134 MOSFET 20V N-CHANNEL ENHAANCEMENT MODE REV1.0 - JAN 2019 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage 20V VGSS, Gate-Source Voltage ±8V ID, Continuous Drain Current TA=25°C 0.8A TA=70°C 0.7A IDM, Pulsed Drain CurrentNOTE1 3.2A PD, Power DissipationNOTE2 TA=25°C 0.3W TA=70°C 0.2W TJ, Operation Junction Temperature -55°C~150°C TSTG, Storage Temperature Range -55°C~150°C Stresses above may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indica ted in the Electrical Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE Parameter Symbol Typ. Max. Unit Thermal Resistance Junction to AmbientNOTE3 t≦10s RθJA - - ℃/W Thermal Resistance Junction to AmbientNOTE3 Steady-State - 280

AiT Semiconductor Inc. www.ait-ic.com AM3134 MOSFET 20V N-CHANNEL ENHAANCEMENT MODE REV1.0 - JAN 2019 RELEASED - - 4 -

ELECTRICAL CHARACTERISTICS

TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Parameters Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250μA 20 - - V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.3 0.5 0.85 V Gate Leakage Current IGSS VDS=0V,VGS=±8V - - ±20 μA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V, TJ=25°C - - 1 μA VDS=16V,VGS=0V, TJ=75°C - - 10 Drain-Source On-ResistanceNOTE4 RDS(ON) VGS=4.5V,ID=0.5A - 200 300 mΩ VGS=2.5V,ID=0.4A - 300 450 VGS=1.8V,ID=0.2A - 500 700 VGS=1.5V,ID=0.1A - 800 1200 Source-Drain Diode Diode Forward VoltageNOTE2 VSD IS=1A,VGS=0V - - 1.0 V Continuous Source Current IS - - 0.8 A Dynamic and Switching Parameters Total Gate Charge Qg VDS=10V, VGS=4.5V ID=0.8A - 1 1.3 nC Gate-Source Charge Qgs - 0.26 0.33 Gate-Drain Charge Qgd - 0.2 0.27 Input Capacitance Ciss VDS=10V, VGS=0V f=1MHz - 39 46 pF Output Capacitance Coss - 14 18 Reverse Transfer Capacitance Crss - 6 7.8 Turn-On TimeNOTE5 td(on) VDD=10V, VGEN=4.5V, RG=10Ω, ID=0.5A - 5 - ns tr - 3.5 - Turn-Off TimeNOTE5 td(off) - 14 - tf - 6 - NOTE1: The value of RθJA is measured with the device in a still air environment with maximum junction temperature TJ(MAX)= 150°C (Initial temperature TA=25°C). NOTE2: The TJ(MAX)=150°C, using junction-to-ambient thermal resistance. NOTE3: Surface−mounted on FR-4 board using 1 sq−in pad, 2 oz Cu, in a still air environment with TA=25°C. NOTE4: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% NOTE5: Pulsed width limited by maximum junction temperature.

AiT Semiconductor Inc. www.ait-ic.com AM3134 MOSFET 20V N-CHANNEL ENHAANCEMENT MODE REV1.0 - JAN 2019 RELEASED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Output Characteristics 2. Drain-Source On Resistance 3. Gate Charge 4. Capacitance 5. Gate Threshold Voltage 6. Power Dissipation

AiT Semiconductor Inc. www.ait-ic.com AM3134 MOSFET 20V N-CHANNEL ENHAANCEMENT MODE REV1.0 - JAN 2019 RELEASED - - 6 - 7. RDS(ON) vs. Junction Temperature 8. Drain Current vs. TJ 9. VDS Voltage (V) 10. Thermal Transient Impedance 11. Gate Charge Waveform 12. Switching Time Waveform

AiT Semiconductor Inc. www.ait-ic.com AM3134 MOSFET 20V N-CHANNEL ENHAANCEMENT MODE REV1.0 - JAN 2019 RELEASED - - 7 -

PACKAGE INFORMATION

Dimension in SOT-723 Package (Unit: mm) Symbol Millimeters Inches Min. Max. Min. Max. A 0.370 0.390 0.015 0.015 b 0.220 0.270 0.009 0.011 b1 0.170 0.220 0.007 0.009 c 0.009 0.011 0.003 0.004 D 1.150 1.250 0.045 0.049 E 0.750 0.850 0.030 0.033 E1 1.150 1.250 0.045 0.049 e 0.400 BSC. 0.016 BSC. e1 0.800 BSC. 0.032 BSC L 0.150 0.250 0.006 0.010 θ 7° 11° 7° 11°

AiT Semiconductor Inc. www.ait-ic.com AM3134 MOSFET 20V N-CHANNEL ENHAANCEMENT MODE REV1.0 - JAN 2019 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or syste ms or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or severe property, or environmental damage. In order t o minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.