AM2N7002T AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com AM2N7002T MOSFET SMALL SIGNAL NMOS REV1.0 - FEB 2019 RELEASED - - 1 - DESCRIPTION FEATURES The AM2N7002T is available in SC-89 package.  Low Gate Charge for Fast Switching  Small 1.6 X 1.6 mm Footprint  ESD Protected Gate  ESD Protected: 2000V  Available in SC-89 Package ORDERING INFORMATION APPLICATION Package Type Part Number SC-89 SPQ: 3,000pcs/Reel CK3 AM2N7002TCK3R AM2N7002TCK3VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products  Power Management Load Switch  Level Shift  Portable Applications such as Cell Phones, Media Players, Digital Came ras, PDA’s, Video Games, Hand Held Computers, etc. PIN DESCRIPTION

AiT Semiconductor Inc. www.ait-ic.com AM2N7002T MOSFET SMALL SIGNAL NMOS REV1.0 - FEB 2019 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 G Gate

2 S Source

3 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM2N7002T MOSFET SMALL SIGNAL NMOS REV1.0 - FEB 2019 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA=25℃ VDSS, Drain−to−Source Voltage 30V VGS, Gate−to−Source Voltage ±10V ID, Continuous Drain CurrentNOTE1 154mA PD, Power DissipationNOTE1 300mW IDM, Pulsed Drain Current (tp ≤10μs ) 618mA TJ, TSTG, Operating Junction and Storage Temperature -55°C ~+150°C ISD, Continuous Source Current (Body Diode) 154mA TL, Lead Temperature for Soldering Purposes (1/8″ from case for 10s) 260°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or an y other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS Parameter Symbol Limit Units Junction−to−Ambient – Steady StateNOTE1 RθJA 416 °C/W

AiT Semiconductor Inc. www.ait-ic.com AM2N7002T MOSFET SMALL SIGNAL NMOS REV1.0 - FEB 2019 RELEASED - - 4 -

ELECTRICAL CHARACTERISTICS

TA=25℃ Parameter Symbol Conditions Min Typ. Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=100μA 30 - - V Zero Gate Voltage Drain Current IDSS VGS=0V, VDS=30V - - 1 μA VGS=0V, VDS=20V, TJ=85 °C - - 1 Gate−to−Source Leakage Current IGSS VDS=0V, VGS=±10V - - ±25 μA VDS=0V, VGS=±5V - - ±1 VDS=0V, VGS=±5V, TJ =85°C - - ±1 ON CHARACTERISTICSNOTE 2 Gate Threshold Voltage VGS(th) VDS=VGS, ID=100μA 0.5 1 1.5 V Drain−to−Source On Resistance RDS(ON) VGS=4.5V,ID=154mA - 1.4 7 Ohm VGS=2.5V,ID=154mA - 2.3 7.5 Forward Transconductance gFS VDS=3V,ID=154mA - 80 - mS CAPACITANCES Input Capacitance Clss VDS=5.0V, VGS=0V, f=1.0MHz - 11.5 - pF Output Capacitance Coss - 10 - Reverse Transfer Capacitance Crss - 3.5 - SWITCHING CHARACTERISTICSNOTE 3 Turn-on Delay Time td(on) VGS=4.5 V, VDS= 5.0V, ID=75mA, RG=10Ohm - 13 - ns Rise Time tr - 15 - Turn-Off Delay Time td(off) - 98 - Fall Time tf - 60 - DRAIN−SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD VGS=0V, IS=0.154A - 0.77 0.9 V NOTE1: Surface−mounted on FR4 board using 1 in sq pad size NOTE2: Pulse Test: pulse width ≤300μs, duty cycle ≤ 2%. NOTE3: Switching characteristics are independent of operating junction temperatures.

AiT Semiconductor Inc. www.ait-ic.com AM2N7002T MOSFET SMALL SIGNAL NMOS REV1.0 - FEB 2019 RELEASED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS 1. ID vs. VDS 2. ID vs. VGS 3. IS vs. VSD 4. RDS(ON) vs. ID 5. RDS(ON) vs. TJ 6. VGSTH vs. TJ

AiT Semiconductor Inc. www.ait-ic.com AM2N7002T MOSFET SMALL SIGNAL NMOS REV1.0 - FEB 2019 RELEASED - - 6 - 7. Capacitance

AiT Semiconductor Inc. www.ait-ic.com AM2N7002T MOSFET SMALL SIGNAL NMOS REV1.0 - FEB 2019 RELEASED - - 7 -

PACKAGE INFORMATION

Dimension in SC-89 Package (Unit: mm) DIM Millimeters Inches MIN MAX MIN MAX A 1.50 1.70 0.059 0.067 B 0.75 0.95 0.030 0.040 C 0.60 0.80 0.024 0.031 D 0.23 0.33 0.009 0.013 G 0.50 BSC 0.020 BSC H 0.53 REF 0.021 REF J 0.10 0.20 0.004 0.008 K 0.30 0.50 0.012 0.020 L 1.10 REF 0.043 REF M - 10° - 10° N - 10° - 10° S 1.50 1.70 0.059 0.067

AiT Semiconductor Inc. www.ait-ic.com AM2N7002T MOSFET SMALL SIGNAL NMOS REV1.0 - FEB 2019 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to mak e changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information bei ng relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applica tions, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.