AM2N7002 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM2N7002 MOSFET SMALL SIGNAL N -CHANNEL 115mA, 60 V REV2.2 - FEB 2010 RELEASED, APR 2019 UPDATED - - 1 - DESCRIPTION FEATURES The AM2N7002 is available in SOT-23 package. ESD Protected: 1000V Available in SOT-23 package ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number SOT-23 SPQ: 3,000pcs/Reel AM2N7002E3R AM2N7002E3VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products
AiT Semiconductor Inc. www.ait-ic.com AM2N7002 MOSFET SMALL SIGNAL N -CHANNEL 115mA, 60 V REV2.2 - FEB 2010 RELEASED, APR 2019 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM2N7002 MOSFET SMALL SIGNAL N -CHANNEL 115mA, 60 V REV2.2 - FEB 2010 RELEASED, APR 2019 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS VDSS, Drain-Source Voltage 60Vdc VDGR, Drain-Gate Voltage (RGS = 1.0MΩ) 60Vdc Drain Current ID, Continuous TC = 25°C TC = 100°C ±115mAdc ±75mAdc IDM, PulsedNOTE1 ±800mAdc Gate-Source Voltage VGS, Continuous VGSM, Non-repetitive (tp ≤ 50μs) ±20Vdc ±40Vdc Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS Parameter Symbol Limits Unit Total Device Dissipation FR-5 BoardNOTE2 TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction–to–AmbientNOTE2 RθJA 556 °C/W Junction and Storage Temperature TJ, TSTG -55 to + 150 °C NOTE1: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%. NOTE2: FR–5 = 1.0×0.75×0.062 in.
AiT Semiconductor Inc. www.ait-ic.com AM2N7002 MOSFET SMALL SIGNAL N -CHANNEL 115mA, 60 V REV2.2 - FEB 2010 RELEASED, APR 2019 UPDATED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise specified Parameter Symbol Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage VBRDSS VGS = 0, ID = 10μAdc 60 - - Vdc Zero Gate Voltage Drain Current IDSS VGS = 0, VDS = 60Vdc TJ = 25°C - - 1.0 μAdc TJ = 125°C - - 500 Gate-Body Leakage Current, Forward IGSSF VGS = 20Vdc - - 1.0 μAdc Gate-Body Leakage Current, Reverse IGSSR VGS = -20Vdc - - -1.0 μAdc ON CHARACTERISTICSNOTE3 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μAdc 1.0 1.6 2.0 Vdc On-State Drain Current ID(on) VDS ≥ 2.0VDS(on), VGS=10Vdc 500 - - mA Static Drain-Source On-State Voltage VDS(on) VGS = 10Vdc, ID = 500mAdc - - 3.75 Vdc VGS = 5.0Vdc, ID = 50mAdc - - 0.375 Static Drain-Source On- State Resistance RDS(ON) VGS = 10Vdc, ID = 500mAdc Ohms VGS = 5.0Vdc, ID = 50mAdc Forward Transconductance GFS VDS ≥2.0VDS(on),ID=200mAdc 80 - - mmhos DYNAMIC CHARACTERISTICS Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1.0MHz - 17 50 pF Output Capacitance Coss - 10 25 Reverse Transfer Capacitance Crss - 2.5 5.0 SWITCHING CHARACTERISTICS Turn-On Delay Time td(on) VDD = 25Vdc , ID =500mAdc, RG = 25Ω, RL = 50Ω, Vgen = 10V - 7 20 ns Turn-Off Delay Time td(off) - 11 40 BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage VSD IS = 115mAdc, VGS = 0V - - -1.5 Vdc Source Current Continuous IS Body Diode - - -115 mAdc Source Current Pulsed ISM - - -800 mAdc NOTE3: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.
AiT Semiconductor Inc. www.ait-ic.com AM2N7002 MOSFET SMALL SIGNAL N -CHANNEL 115mA, 60 V REV2.2 - FEB 2010 RELEASED, APR 2019 UPDATED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS 1. ON-Region Characteristics 2. Transfer Characteristcs 3. RDS(ON) vs. ID 4. RDS(ON) vs. ID 5. RDS(ON) vs. VGS 6. RDS(ON) vs. Temperature
AiT Semiconductor Inc. www.ait-ic.com AM2N7002 MOSFET SMALL SIGNAL N -CHANNEL 115mA, 60 V REV2.2 - FEB 2010 RELEASED, APR 2019 UPDATED - - 6 - 7. Capacitor vs. VDS 8. IS vs.VSD 9. VGS(th) vs. Temperature 10. IDS vs. VDS
AiT Semiconductor Inc. www.ait-ic.com AM2N7002 MOSFET SMALL SIGNAL N -CHANNEL 115mA, 60 V REV2.2 - FEB 2010 RELEASED, APR 2019 UPDATED - - 7 -
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm) Symbol Millimeters Inches Min Max Min Max A 0.89 1.11 0.035 0.044 A1 0.01 0.10 0.001 0.004 b 0.37 0.50 0.015 0.020 c 0.09 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 1.20 1.40 0.047 0.055 e 1.78 2.04 0.070 0.081 L 0.10 0.30 0.004 0.012 L1 0.35 0.69 0.014 0.029 HE 2.10 2.64 0.083 0.104 θ 0° 10° 0° 10°
AiT Semiconductor Inc. www.ait-ic.com AM2N7002 MOSFET SMALL SIGNAL N -CHANNEL 115mA, 60 V REV2.2 - FEB 2010 RELEASED, APR 2019 UPDATED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its p roduct, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sal e.