AM2931-110 STMICROELECTRONICS | Alldatasheet
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RF & MICROWAVE TRANSISTORS .400 x .500 2L SFL (S138) hermetical ly sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .3:1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .POUT =105 W MIN. WITH 6.2 dB GAIN
DESCRIPTION
The AM2931-110 is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and tempera- tures and can withstand a 3:1 output VSWR. Low RF thermal resistance, refractory/gold metalliza- tion, and computerized automatic wire bonding techniques ensure high reliability and product con- sistency (including phase characteristics). The AM2931-110 is supplied in the BIGPAC Her- metic Metal/Ceramic package with internal Input/Output matching circuitry, and is intended for military and other high reliability applications. PIN CONNECTION BRANDING 2931-110 ORDER CODE AM2931-110 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 100°C) 375 W IC Device Current* 12 A VCC Collector-Supply Voltage* 48 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 0.40 °C/W *Applies only to rated RF amplifier opera tion AM2931-110 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value UnitMin. Typ. Max. POUT f= 2900 — 3100MHz P IN = 25W V CC = 42V 105 115 — W ηcf = 2900 — 3100MHz P IN = 25W V CC = 42V 32 40 — % G P f= 2900 — 3100MHz P IN = 25W V CC = 42V 6.2 6.6 — dB Note: Pulse Width = 50 µSec Duty Cycle = 10% STATIC Symbol Test Conditions Value UnitMin. Typ. Max. BV CBO IC = 40mA I E = 0mA 55 — — V BV EBO IE = 8mA I C = 0mA 3.5 — — V BV CER IC = 40mA R BE = 10Ω 55 — — V ICES VBE = 0V V CE = 42V — — 30 mA hFE VCE = 5V I C = 4A 30 — — — DYNAMIC TYPICAL PERFORMANCE TYPICAL BROADBAND PERFORMANCE VCC - 42 Volts PW - 50µSec DC - 10% T C -2 5°C PIN (W) P IN (W) AM2931-110
All dimensions are in inches. Substrate material: .025 thick AI2O 3 (Er= 9.6) C1 : 1500 pF RF Feedthrough C2 : 1 µF, CK06 CapacitorC C3 : 1 µF, Tantalum Capacitor C4 : 100 µF Electrolytic Capacitor, 63V C5 : 22 pF Chip Capacitor (bridge at location indicated) RFC1 : Gold Plated Nickel Strap, 0.060 Inch Wide, 0.005 Inch Thick, 0.290 Inch Long TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE PIN = 25 W VCC = 42 V Normalized to 50 ohms IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) AM2931-110
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A AM2931-110