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AiT Semiconductor Inc. www.ait-ic.com AM2342 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED - - 1 - DESCRIPTION FEATURES The AM2342 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent R DS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. AM2342 is available in SOT-23 packages. 20V/5.0A, R DS(ON) =25mΩ(typ.)@VGS =4.5V 20V/4.5A, RDS(ON) =34mΩ(typ.)@VGS =2.5V 20V/4.0A, RDS(ON) =48mΩ(typ.)@VGS =1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Available in SOT-23 Package APPLICATION Power Management in Note book Portable Equipment DSC LCD Display inverter Battery Powered System DC/DC Converter ORDER INFORMATION Package Type Part Number SOT-23 E3 AM2342E3R AM2342E3VR Note V: Green Package R : Tape & Reel AiT provides all Pb free products Suffix “ V “ means Green Package N CHANNEL MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM2342 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM2342 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃ Unless otherwise specifiedd VDSS, Drain-Source Voltage 20V VGSS, Gate-Source Voltage ±12V ID, Continuous Drain Current (TJ=150°C) V GS=4.5V 5.0A IDM, Pulsed Drain Current 20A IS, Continuous Source Current (Diode Conduction) 1.0A PD, Power Dissipation TA=25°C 1.25W TA=70°C 0.8W TJ, Operation Junction Temperature 150℃ TSTG, Storage Temperature Range -55/150°C Stresses above may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL INFORMATION Parameter Symbol Max Unit Thermal Resistance-Junction to Ambient R θJA 120 ℃/W
AiT Semiconductor Inc. www.ait-ic.com AM2342 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃ Unless otherwise specified Parameter Symbol Conditions MIN TYP MAX Unit Static Parameters Drain-Source Breakdown Voltage V(BR)DSS V GS=0V,ID=250μA 20 - - V Gate Threshold Voltage V GS(th) V DS=VGS,ID=250μA 0.4 - 1.0 V Gate Leakage Current I GSS V DS=0V,VGS=±12V - - ±100 nA Zero Gate Voltage Drain Current I DSS VDS=20V,VGS=0V - 1 μA VDS=20V,VGS=0V TJ=55°C - - 10 On-State Drain Current I D(ON) V DS≧5V,VGS=4.5V 5 - - A Drain-source On-Resistance R DS(ON) VGS=4.5V,ID=5.0A - 25 28 mΩVGS=2.5V,ID=4.5A - 34 38 VGS=1.8V,ID=4.0A - 48 60 Forward Transconductance G fs V DS=15V,ID=5.0A - 30 - S Source-Drain Doide Diode Forward Voltage V SD I S=1.7A,VGS=0V - 1.0 1.3 V Dynamic Parameters Total Gate Charge Q g VDS=10V VGS=4.5V ID=5.5A - 10 12 nC Gate-Source Charge Q gs - 1 . 4 - Gate-Drain Charge Q gd - 2 . 2 - Input Capacitance C ISS VDS=10V VGS=0V f=1MHz - 580 - pF Output Capacitance C OSS - 120 - Reverse Transfer Capacitance C RSS - 9 8 - Turn-On Time td(on) V DD=10V RL=10Ω ID=1.0A VGEN=4.5V RG=6Ω - 14 24 nS tr - 40 60 Turn-Off Time td(off) - 45 65 tf - 32 42 NOTE: 1. Pulse test: pulse width <= 300us, duty cycle<= 2% 2. Static parameters are based on package level with recommended wire-bonding
AiT Semiconductor Inc. www.ait-ic.com AM2342 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED - - 5 - TYPICAL CHARACTERISTICS TA=25℃ Unless specified 1. Output Characteristics 2. Drain-Source On Resistance 3. Drain Source On Resistance 4. Gate Threshold Voltage 5. Gate Charge 6. Drain Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM2342 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED - - 6 - 7. Source Drain Diode Forward 8. Capacitance 9. Power Dissipation 10. Drain Current 11. Thermal Transient Impedance
AiT Semiconductor Inc. www.ait-ic.com AM2342 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED - - 7 -
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm) Symbol Min Max A 1.050 1.250 A1 0.000 0.100 A2 1.050 1.150 b 0.300 0.500 c 0.100 0.200 D 2.820 3.020 E 1.500 1.700 E1 2.650 2.950 e 0.950(BSC) e1 1.800 2.000 L 0.300 0.600 θ 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM2342 MOSFET 20V N-CHANNEL ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circu it product or service without n otice, and advises its customers to obtain the latest version of relevant information to verify, before placin g orders, that the information being relied on is current. AiT Semiconductor Inc.'s integrat ed circuit products are not de signed, intended, authorized, or warranted to be suitable for use in life support applications, devices or sy stems or other critical applications. Use of AiT products in such applications is understood to be fully at the r i s k o f t h e c u s t o m e r . A s u s e d h e r e i n m a y involve potential risks of death, personal injury, or servere p r o p e r t y , o r e n v i r o n m e n t a l d a m a g e . I n o r d e r t o minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to customer prod uct design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.