AM2333 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM2333 MOSFET 12V P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - APR 2020 RELEASED - - 1 - DESCRIPTION FEATURES The AM2333 is available in SOT-23 package.
ORDERING INFORMATION
SPQ: 3,000pcs/Reel AM2333E3R AM2333E3VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Ultra Low RDS(ON) ESD Diode. Protected Gate Available in SOT-23 package
APPLICATIONS
Battery Switch High Side Load Switch TYPICAL APPLICATION
AiT Semiconductor Inc. www.ait-ic.com AM2333 MOSFET 12V P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - APR 2020 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM2333 MOSFET 12V P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - APR 2020 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA=25℃, unless otherwise noted VDSS, Drain−to−Source Voltage -12V VGS, Gate−to−Source Voltage ±8V ID, Drain CurrentNOTE1Steady State -6A IDM, Pulsed Drain Current (tp = 10μs) -21A PD, Power DissipationNOTE1 Steady State t < 7s 1.1W 1.8W RθJA, Thermal Resistance, Junction–to–Ambient 140°C/W TJ, TSTG, Operating Junction and Storage Temperature Range -55°C ~ +150°C Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
AiT Semiconductor Inc. www.ait-ic.com AM2333 MOSFET 12V P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - APR 2020 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250μA -12 - - V Zero Gate Voltage Drain Current IDSS VGS=0V, VDS=-12V, TJ = 25°C - - -1 μA Gate−to−Source Leakage Current IGSS VDS=0V, VGS=±8V - - ±10 μA Gate Threshold VoltageNOTE2 VGS(th) VDS=VGS, ID=-250μA - - -1 V Drain-Source On-Resistance NOTE2 RDS(ON) VGS=-4.5V, ID=-1A - 27 32 mΩ VGS=-2.5V, ID=-1A - 32 40 VGS=-1.8V, ID=-1A - 45 71 Forward TransconductanceNOTE2 gfs VDS=-5V, ID=-3A - 11 - S Input Capacitance Ciss VDS=-15V ,VGS=0V f=1.0MHz - 1571 - pF Output Capacitance Coss - 214 - Reverse Transfer Capacitance Crss - 230 - Threshold Gate Charge Qg(TH) VDS=-15V, VGS=-0.7V, ID=-4.0A - 1.2 - nC Total Gate Charge Qg(TOT) VGS=-4.5V, VDS=-15V, ID=-4A - 19.2 - Gate-Source Charge Qgs - 2.5 - Gate-Drain Charge Qgd - 7.1 - Turn-On Delay Time td(on) VGS=-4.5V, VDD=-15V, ID=-4A, RG=1Ω - 8.6 - ns Rise Time tr - 15 - Turn-Off Delay Time td(off) - 150 - Fall Time tf - 88 - Diode Forward Voltage VSD IS=-1A, VGS=0V, TJ=25°C - - -1.5 V NOTE2: pulse test: pulse width≤300μs, duty cycle≤2% NOTE3: Switching characteristics are independent of operating junction temperatures
AiT Semiconductor Inc. www.ait-ic.com AM2333 MOSFET 12V P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - APR 2020 RELEASED - - 5 - TYPICAL ELECTRICAL CHARACTERISTICS 1. On-Region Characteristics 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. On-Resistance vs. Drain Current and Gate Voltage 5. On-Resistance Variation with Temperature 6. Drain-to-Source Leakage Current vs. Voltage
AiT Semiconductor Inc. www.ait-ic.com AM2333 MOSFET 12V P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - APR 2020 RELEASED - - 6 - 7. Diode Forward Voltage vs. Current 8. Threshold Voltage 9. Gate-to-Source and Drain -to- Source Voltage vs. Total Charge 10. Capacitance variation 11. FET Thermal Response
AiT Semiconductor Inc. www.ait-ic.com AM2333 MOSFET 12V P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - APR 2020 RELEASED - - 7 -
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm) Symbol Min. Max. A 0.90 1.10 A1 0.01 0.10 b 0.30 0.50 c 0.10 0.20 D 2.80 3.00 E 1.50 1.70 e 1.80 2.00 L 0.20 0.60 L1 0.60REF HE 2.60 3.00 θ 0° 10°
AiT Semiconductor Inc. www.ait-ic.com AM2333 MOSFET 12V P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - APR 2020 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any i ts product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the custom er should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale .