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AiT Semiconductor Inc. www.ait-ic.com AM2319 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 1 - DESCRIPTION FEATURES AM2319 is available in a SOT-23S package. -40V/-3A, RDS(ON)= 80mΩ(max.) @ VGS= -10V RDS(ON)= 120mΩ(max.) @ VGS= -4.5V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-23S package. ORDERING INFORMATION APPLICATION Package Type Part Number SOT-23S E3S AM2319E3SR AM2319E3SVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package Load Switch. DC/DC Converter. PIN DESCRIPTION P-Channel MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM2319 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM2319 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage -40V VGSS, Gate-Source Voltage ±20V TJ, Maximum Junction Temperature 150℃ TSTG, Storage Temperature Range -55℃~150℃ IS, Diode Continuous Forward Current -1A IDM NOTE1, Pulsed Drain Current TC=25℃ -12A TC=100℃ -7.6A ID, Continuous Drain Current TC=25℃ -3A TC=100℃ -1.9A PD, Maximum Power Dissipation TC=25℃ 1.1W TC=100℃ 0.4W RθJANOTE1, Thermal Resistance-Junction to Ambient t ≤ 10sec. 115°C/W Steady state 160°C/W Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Surface Mounted on 1in2 pad area, t ≤ 10sec.
AiT Semiconductor Inc. www.ait-ic.com AM2319 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=-250μA -40 - - V Zero Gate Voltage Drain Current IDSS VDS=-32V,VGS=0V - - -1 μA TJ=85°C -30 Gate Threshold Voltage VGS(th) VDS=VGS,IDS=-250μA -1.3 -1.9 -2.5 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Drain-Source On-state Resistance RDS(ON) NOTE2 VGS=-10V,IDS=-3A - 64 80 mΩ VGS=-4.5V,ID=-1.9A - 90 120 Diode Characteristics Diode Forward Voltage VSD NOTE2 ISD=-1A,VGS=0V - -0.8 -1.2 V Reverse Recovery Time trr ISD=-3A, dlSD/dt=100A/μs - 18 - ns Reverse Recovery Charge Qrr - 11 - nC Dynamic Characteristics NOTE3 Input Capacitance CISS VGS=0V, VDS=-20V, Frequency=1.0MHz - 360 - pF Output Capacitance COSS - 58 - Reverse Transfer Capacitance CRSS - 40 - Turn-on Delay Time tD(ON) VDD=-20V, RL=20Ω IDS=-1A, VGEN=-10V, RG=6Ω - 8 - ns Turn-on Rise Time tR - 6 - Turn-off Delay Time tD(OFF) - 25 - Turn-off Fall Time tF - 14 - Gate Charge Characteristics NOTE3 Total Gate Charge QG VDS=-20V, VGS=-10V, IDS=-3A - 8.3 - nC Gate-Source Charge QGS - 1.7 - Gate-Drain Charge QGD - 1.9 - NOTE2: Pulse test; pulse width≤300μs, duty cycle≤2%. NOTE3: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM2319 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM2319 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 6 - 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge
AiT Semiconductor Inc. www.ait-ic.com AM2319 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 7 - DETAILED INFORMATION Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM2319 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 8 -
PACKAGE INFORMATION
Dimension in SOT-23S Package (Unit: mm) SYMBOL MIN MAX A - 1.200 A1 0.000 0.150 A2 0.900 1.300 b 0.300 0.500 c 0.080 0.220 D 2.700 3.100 E 2.200 2.600 E1 1.200 1.400 e 0.950(BSC) e1 1.900(BSC) L 0.300 0.600 θ 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM2319 MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET REV1.0 - DEC 2013 RELEASED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant in formation to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental da mage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.