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AiT Semiconductor Inc. www.ait-ic.com AM2318 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - MAR 2016 RELEASED, APR 2016 UPDATED - - 1 - DESCRIPTION FEATURES The AM2318 is available in SOT-23 package.
ORDERING INFORMATION
V: Halogen free Package R: Tape & Reel SPQ: 3,000pcs / Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package 20V / 2.0A, RDS(ON)= 80mΩ(MAX) @VGS = 4.5V RDS(ON)=90mΩ(MAX) @ VGS = 2.5V Super High dense cell design for extremely low RDS(ON). Reliable and Rugged. Available in SOT-23 Package APPLICATION Power Management Portable Equipment and Battery Power Systems. PIN DESCRIPTION
AiT Semiconductor Inc. www.ait-ic.com AM2318 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - MAR 2016 RELEASED, APR 2016 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
TA=25℃, unless otherwise noted VDS, Drain-Source Voltage 20V VGS, Gate-Source Voltage ±8V ID, Drain Current-Continuous 2.0A Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
AiT Semiconductor Inc. www.ait-ic.com AM2318 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - MAR 2016 RELEASED, APR 2016 UPDATED - - 3 -
ELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA 20 V Zero-Gate Voltage Drain Current IDSS VDS = 12V, VGS = 0V 1 uA Gate Body Leakage Current, Forward IGSSF VGS = 8V, VDS = 0V 100 nA Gate Body Leakage Current, Reverse IGSSR VGS = -8V, VDS = 0V -100 nA On Characteristics Gate Threshold Voltage VGS(th) VGS=VDS, ID = 250uA 0.4 1.3 V Static Drain-Source On-Resistance RDS(ON) VGS = 4.5V, ID = 3.6A 70 80 mΩ VGS = 2.5V, ID = 3.1A 75 90 Source-Drain Diode Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 0.94A 1.2 V Switching Characteristics Turn-On Delay Time td(on) VDD = 10V, ID = 1A, VGS = 4.5V, RG = 6Ω 5 15 ns Turn-On Rise Time tr 8.5 17 ns Turn-Off Delay Time td(off) 11 20 ns Turn-Off Fall Time tf 3 10 ns Total Gate Charge Qg VDS = 10V, ID = 1.7A, VGS = 4.5V 3.5 5 nC Gate-Source Charge Qgs 0.55 nC Gate-Drain Charge Qgd 0.95 nC
AiT Semiconductor Inc. www.ait-ic.com AM2318 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - MAR 2016 RELEASED, APR 2016 UPDATED - - 4 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Output Characteristics 2. Transfer Characteristics 3. Breakdown Voltage Variation with Temperature 4. Gate Threshold Variation with Temperature 5. On-Resistance Variation with Temperature 6. On-Resistance vs. Drain Current
AiT Semiconductor Inc. www.ait-ic.com AM2318 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - MAR 2016 RELEASED, APR 2016 UPDATED - - 5 - 7. On-Resistance vs. Gate-to-Source Voltage 8. Source-Drain Diode Forward Voltage
AiT Semiconductor Inc. www.ait-ic.com AM2318 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - MAR 2016 RELEASED, APR 2016 UPDATED - - 6 -
PACKAGE INFORMATION
Dimension in SOT-23 (Unit: mm)
AiT Semiconductor Inc. www.ait-ic.com AM2318 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET REV1.1 - MAR 2016 RELEASED, APR 2016 UPDATED - - 7 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserv es the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. U se of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.