AM2317B AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM2317B MOSFET -20V SINGLE P -CHANNEL MOSFET REV1.0 - JUL 2018 RELEASED - - 1 - DESCRIPTION FEATURES VDS=-20V VGS=±8V ID(A)=-5.3A RDS(ON)=31mΩ(Typ.)@VGS=-4.5V RDS(ON)=40mΩ(Typ.)@VGS=-2.5V RDS(ON)=50mΩ(Typ.)@VGS=-1.8V RDS(ON)=60mΩ(Typ.)@VGS=-1.5V The AM2317B is available in SOT-23 package.
ORDERING INFORMATION
SPQ: 3,000pcs/Reel AM2317BE3R AM2317BE3VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Trech DMOS Technology 1.5V Low gate drive applications Available in SOT-23 package
APPLICATIONS
Portable Equipment Power Management P CHANNEL MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM2317B MOSFET -20V SINGLE P -CHANNEL MOSFET REV1.0 - JUL 2018 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 G Gate
2 S Source
3 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM2317B MOSFET -20V SINGLE P -CHANNEL MOSFET REV1.0 - JUL 2018 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted VDSS, Drain-Source Voltage -20V VGSS, Gate-Source Voltage ±8V ID, Continuous Drain Current TA = 25°C -5.3A TA= 70°C -4.2A IDM, Pulsed Drain CurrentNOTE1 -21.2A PD, Power DissipationNOTE2 TA = 25°C 1.6W TA= 70°C 1W TJ, Operation Junction Temperature −55°C ~ +150°C TSTG, Storage Temperature Range −55°C ~ +150°C Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE Parameter Symbol Min Typ Max Units Thermal Resistance Junction to AmbientNOTE2 t≦10s RθJA - - 80 °C/W Thermal Resistance Junction to AmbientNOTE2,3 Steady-State - - 120
AiT Semiconductor Inc. www.ait-ic.com AM2317B MOSFET -20V SINGLE P -CHANNEL MOSFET REV1.0 - JUL 2018 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min Typ Max Units Static Parameters Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=-250μA -20 - - V Gate Threshold Voltage VGS(th) VDS=VGS, IDS=-250μA -0.3 -0.5 -1 V Gate Leakage Current IGSS VDS=0V, VGS=±8V - - ±10 μA Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V, TJ=25°C - - -1 μA VDS=-16V, VGS=0V, TJ=75°C - - -10 Drain-Source On-ResistanceNOTE4 RDS(ON) VGS=-4.5V IDS=-4.5A - 31 35 mΩ VGS=-2.5V, IDS=-4A - 40 45 VGS=-1.8V, IDS=-2A - 50 57 VGS=-1.5V, IDS=-1.2A - 60 70 Forward Transconductance Gfs VDS=-10V, ID=-4.5A - 11 - S Diode Characteristics Diode Forward VoltageNOTE4 VSD IS=-1A, VGS=0V - -0.7 -1 V Continuous Source Current IS - - -2.7 A Dynamic and Switching Parameters Total Gate Charge Qg VDS=-10V, VGS=-4.5V, IDS=-4.5A - 9.3 13 nC Gate-Source Charge Qgs - 1.5 2.1 Gate-Drain Charge Qgd - 2.5 3.5 Input Capacitance Ciss VDS=-10V, VGS=0V, f=1MHz - 825 1155 pF Output Capacitance Coss - 120 168 Reverse Transfer Capacitance Crss - 82 115 Turn-On TimeNOTE4 td(on) VDD=-10V, VGEN=-4.5V, RG=3.3Ω, ID=-1A - 10.2 - ns tr - 18 - Turn-Off TimeNOTE4 td(off) - 46 - tf - 14 - NOTE1: Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. NOTE2: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board in a still air environment with maximum junction temperature TJ(MAX)=150°C (initial temperature TA=25°C). NOTE3: TJ(MAX)=150°C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. NOTE4: The data tested by pulsed , pulse width ≦ 300μS , duty cycle ≦ 2%.
AiT Semiconductor Inc. www.ait-ic.com AM2317B MOSFET -20V SINGLE P -CHANNEL MOSFET REV1.0 - JUL 2018 RELEASED - - 5 - TYPICAL ELECTRICAL CHARACTERISTICS 1. Output Characteristics 2. Drain-Source On Resistance 3. Gate Charge 4. Capacitance 5. Gate Threshold Voltage 6. Power Dissipation
AiT Semiconductor Inc. www.ait-ic.com AM2317B MOSFET -20V SINGLE P -CHANNEL MOSFET REV1.0 - JUL 2018 RELEASED - - 6 - 7. RDS(ON) vs. Junction Temperature 8. Drain Current vs. TJ 9. Maximum Safe Operation Area 10. Thermal Transient Impedance 11. Gate Charge Waveform 12. Switching Time Waveform
AiT Semiconductor Inc. www.ait-ic.com AM2317B MOSFET -20V SINGLE P -CHANNEL MOSFET REV1.0 - JUL 2018 RELEASED - - 7 -
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm) Symbol Millimeters Inches Min. Max. Min. Max. A 1.000 1.300 0.039 0.049 A1 0.000 0.100 0.000 0.004 A2 1.000 1.200 0.039 0.047 b 0.300 0.500 0.012 0.020 c 0.047 0.207 0.002 0.008 D 2.800 3.000 0.110 0.118 E 1.500 1.700 0.059 0.067 E1 2.600 3.000 0.102 0.118 e 0.950 TYP 0.037 TYP e1 1.900 TYP 0.075 TYP L1 0.250 0.550 0.010 0.022 L 0.550 0.650 0.021 0.039 θ 0° 8° 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM2317B MOSFET -20V SINGLE P -CHANNEL MOSFET REV1.0 - JUL 2018 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or ap plication support. AiT warrants the performance of its products of the specifications applicable at the time of sale.